Single FETs, MOSFETs

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Manufacturer

Rohm SemiconductorVishay Siliconix

Series

-TrenchFET®

Packaging

Cut Tape (CT)Digi-Reel®Tape & Reel (TR)

Drain to Source Voltage (Vdss)

30 V40 V

Current - Continuous Drain (Id) @ 25°C

40A (Ta)40A (Tc)

Rds On (Max) @ Id, Vgs

3mOhm @ 20A, 10V7.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19 nC @ 10 V125 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

1410 pF @ 20 V5600 pF @ 15 V

Power Dissipation (Max)

5.4W (Ta), 83W (Tc)26W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)150°C (TJ)

Supplier Device Package

PowerPAK® SO-8TO-252

Package / Case

PowerPAK® SO-8TO-252-3, DPak (2 Leads + Tab), SC-63

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI7880ADP-T1-E3 MOSFET N-CH 30V 40A PPAK SO-8 Vishay Siliconix	9,000 In Stock	1 : $4.15000 Cut Tape (CT) 3,000 : $2.08079 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	40A (Tc)	4.5V, 10V	3mOhm @ 20A, 10V	3V @ 250µA	125 nC @ 10 V	±20V	5600 pF @ 15 V	-	5.4W (Ta), 83W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
RD3G400GNTL MOSFET N-CH 40V 40A TO252 Rohm Semiconductor	14,968 In Stock	1 : $1.37000 Cut Tape (CT) 2,500 : $0.58212 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	40A (Ta)	4.5V, 10V	7.5mOhm @ 40A, 10V	2.5V @ 1mA	19 nC @ 10 V	±20V	1410 pF @ 20 V	-	26W (Ta)	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.