Single FETs, MOSFETs

Results: 2
Series
CoolMOS™CoolMOS™ PFD7
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
4.7A (Tc)7.3A (Tc)
Rds On (Max) @ Id, Vgs
600mOhm @ 4.6A, 10V1Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 350µA4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
230 pF @ 400 V790 pF @ 25 V
Power Dissipation (Max)
26W (Tc)83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
PG-TO252-3PG-TO252-3-313
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
2,008
In Stock
1 : $2.45000
Cut Tape (CT)
2,500 : $1.10607
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)600 V7.3A (Tc)10V600mOhm @ 4.6A, 10V3.9V @ 350µA27 nC @ 10 V±20V790 pF @ 25 V-83W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TO252-3-313TO-252-3, DPAK (2 Leads + Tab), SC-63
428
In Stock
1 : $0.83000
Cut Tape (CT)
2,500 : $0.31548
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)600 V4.7A (Tc)10V1Ohm @ 1A, 10V4.5V @ 50µA6 nC @ 10 V±20V230 pF @ 400 V-26W (Tc)-40°C ~ 150°C (TJ)Surface MountPG-TO252-3TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.