Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Series
-UltraFET™
Drain to Source Voltage (Vdss)
55 V60 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)50A (Tc)
Rds On (Max) @ Id, Vgs
28mOhm @ 31A, 10V34mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 20 V67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 25 V1900 pF @ 25 V
Power Dissipation (Max)
93W (Tc)150W (Tc)
Supplier Device Package
TO-220-3TO-220AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB
IRFZ44PBF
MOSFET N-CH 60V 50A TO220AB
Vishay Siliconix
10,387
In Stock
1 : $1.38000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
10V
28mOhm @ 31A, 10V
4V @ 250µA
67 nC @ 10 V
±20V
1900 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220-3
HUF75321P3
MOSFET N-CH 55V 35A TO220-3
onsemi
500
In Stock
1 : $1.48000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
55 V
35A (Tc)
10V
34mOhm @ 35A, 10V
4V @ 250µA
44 nC @ 20 V
±20V
680 pF @ 25 V
-
93W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.