Single FETs, MOSFETs

Results: 2
Series
HiPerFET™, Q3 ClassHiPerFET™, Ultra X
Drain to Source Voltage (Vdss)
850 V1000 V
Current - Continuous Drain (Id) @ 25°C
14A (Tc)18A (Tc)
Rds On (Max) @ Id, Vgs
490mOhm @ 12A, 10V550mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
5.5V @ 1mA6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1043 pF @ 25 V7200 pF @ 25 V
Power Dissipation (Max)
460W (Tc)500W (Tc)
Supplier Device Package
ISOPLUS247™TO-247 (IXTH)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247_IXFH
IXFH14N85X
MOSFET N-CH 850V 14A TO247-3
IXYS
112
In Stock
450
Factory
1 : $8.41000
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ActiveN-ChannelMOSFET (Metal Oxide)850 V14A (Tc)10V550mOhm @ 500mA, 10V5.5V @ 1mA30 nC @ 10 V±30V1043 pF @ 25 V-460W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247 (IXTH)TO-247-3
TO-247-ISOPLUS-EP-(R)
IXFR24N100Q3
MOSFET N-CH 1000V 18A ISOPLUS247
IXYS
147
In Stock
1 : $31.35000
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ActiveN-ChannelMOSFET (Metal Oxide)1000 V18A (Tc)10V490mOhm @ 12A, 10V6.5V @ 4mA140 nC @ 10 V±30V7200 pF @ 25 V-500W (Tc)-55°C ~ 150°C (TJ)Through HoleISOPLUS247™TO-247-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.