Single FETs, MOSFETs

Showing

of 4

Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IRLR3636TRPBF MOSFET N-CH 60V 50A DPAK Infineon Technologies	12,512 In Stock	1 : $1.65000 Cut Tape (CT) 2,000 : $0.66338 Tape & Reel (TR)	-	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	50A (Tc)	4.5V, 10V	6.8mOhm @ 50A, 10V	2.5V @ 100µA	49 nC @ 4.5 V	±16V	3779 pF @ 50 V	-	143W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR1018ETRPBF MOSFET N-CH 60V 56A DPAK Infineon Technologies	7,686 In Stock	1 : $1.78000 Cut Tape (CT) 2,000 : $0.49175 Tape & Reel (TR)	Tariff may apply if shipping to the United States	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	56A (Tc)	10V	8.4mOhm @ 47A, 10V	4V @ 100µA	69 nC @ 10 V	±20V	2290 pF @ 50 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
STD17NF25 MOSFET N-CH 250V 17A DPAK STMicroelectronics	4,689 In Stock	1 : $1.88000 Cut Tape (CT) 2,500 : $0.57379 Tape & Reel (TR)	Tariff may apply if shipping to the United States	STripFET™ II	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	250 V	17A (Tc)	10V	165mOhm @ 8.5A, 10V	4V @ 250µA	29.5 nC @ 10 V	±20V	1000 pF @ 25 V	-	90W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
FDD86369 MOSFET N-CH 80V 90A DPAK onsemi	1,523 In Stock	1 : $1.01000 Cut Tape (CT) 2,500 : $0.69898 Tape & Reel (TR)	Tariff may apply if shipping to the United States	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	90A (Tc)	10V	7.9mOhm @ 80A, 10V	4V @ 250µA	54 nC @ 10 V	±20V	2530 pF @ 40 V	-	150W (Tj)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63

Showing

of 4

Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.