Single FETs, MOSFETs

Results: 2
Series
-TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
300mA (Tc)1.2A (Ta)
Rds On (Max) @ Id, Vgs
365mOhm @ 1.2A, 10V5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA4V @ 250µA
Vgs (Max)
±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V549 pF @ 50 V
Power Dissipation (Max)
710mW (Ta), 8.3W (Tc)830mW (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
Showing
of 2
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
PMV240SPR
MOSFET P-CH 100V 1.2A TO236AB
Nexperia USA Inc.
16,430
In Stock
1 : $0.69000
Cut Tape (CT)
3,000 : $0.15985
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
1.2A (Ta)
-
365mOhm @ 1.2A, 10V
4V @ 250µA
15 nC @ 10 V
±25V
549 pF @ 50 V
-
710mW (Ta), 8.3W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
TO-236AB
2N7002/HAMR
MOSFET N-CH 60V 300MA TO236AB
Nexperia USA Inc.
48,436
In Stock
1 : $0.22000
Cut Tape (CT)
3,000 : $0.04372
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Tc)
4.5V, 10V
5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±30V
50 pF @ 10 V
-
830mW (Tc)
-65°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.