Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF640NPBF MOSFET N-CH 200V 18A TO220AB Infineon Technologies	70,459 In Stock	1 : $1.14000 Tube	HEXFET®	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	150mOhm @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	1160 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF5210PBF MOSFET P-CH 100V 40A TO220AB Infineon Technologies	6,941 In Stock	1 : $2.80000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	40A (Tc)	10V	60mOhm @ 24A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	2700 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF640PBF MOSFET N-CH 200V 18A TO220AB Vishay Siliconix	2,087 In Stock	1 : $1.91000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	180mOhm @ 11A, 10V	4V @ 250µA	70 nC @ 10 V	±20V	1300 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF9640PBF MOSFET P-CH 200V 11A TO220AB Vishay Siliconix	29,156 In Stock	1 : $1.96000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	11A (Tc)	10V	500mOhm @ 6.6A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	1200 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP19NF20 MOSFET N-CH 200V 15A TO220AB STMicroelectronics	575 In Stock	1 : $1.57000 Tube	MESH OVERLAY™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	15A (Tc)	10V	160mOhm @ 7.5A, 10V	4V @ 250µA	24 nC @ 10 V	±20V	800 pF @ 25 V	-	90W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
STP20NF20 MOSFET N-CH 200V 18A TO220AB STMicroelectronics	228 In Stock	1 : $2.47000 Tube	STripFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	125mOhm @ 10A, 10V	4V @ 250µA	39 nC @ 10 V	±20V	940 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.