Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

2N7002ET1G MOSFET N-CH 60V 260MA SOT23-3 onsemi	559,542 In Stock	1 : $0.23000 Cut Tape (CT) 3,000 : $0.03951 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	260mA (Ta)	4.5V, 10V	2.5Ohm @ 240mA, 10V	2.5V @ 250µA	0.81 nC @ 5 V	±20V	26.7 pF @ 25 V	-	300mW (Tj)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
CSD18536KTT MOSFET N-CH 60V 200A DDPAK Texas Instruments	1,403 In Stock	1 : $4.68000 Cut Tape (CT) 500 : $2.82800 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200A (Ta)	4.5V, 10V	1.6mOhm @ 100A, 10V	2.2V @ 250µA	140 nC @ 10 V	±20V	11430 pF @ 30 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	DDPAK/TO-263-3	TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
FDD4243 MOSFET P-CH 40V 6.7A/14A DPAK onsemi	2,872 In Stock	1 : $0.94000 Cut Tape (CT) 2,500 : $0.35650 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	6.7A (Ta), 14A (Tc)	4.5V, 10V	44mOhm @ 6.7A, 10V	3V @ 250µA	29 nC @ 10 V	±20V	1550 pF @ 20 V	-	42W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.