Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

2N7002P,215 MOSFET N-CH 60V 360MA TO236AB Nexperia USA Inc.	1,233,738 In Stock	1 : $0.24000 Cut Tape (CT) 3,000 : $0.04107 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	60 V	360mA (Ta)	10V	1.6Ohm @ 500mA, 10V	2.4V @ 250µA	0.8 nC @ 4.5 V	±20V	50 pF @ 10 V	-	350mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q100	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
RUE003N02TL MOSFET N-CH 20V 300MA EMT3 Rohm Semiconductor	83,423 In Stock	1 : $0.41000 Cut Tape (CT) 3,000 : $0.09039 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	20 V	300mA (Ta)	1.8V, 4V	1Ohm @ 300mA, 4V	1V @ 1mA	-	±8V	25 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	-	-	Surface Mount	EMT3	SC-75, SOT-416
DMP10H400SK3-13 MOSFET P-CH 100V 9A TO252-3 Diodes Incorporated	84,745 In Stock 262,500 Factory	1 : $0.65000 Cut Tape (CT) 2,500 : $0.24568 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	9A (Tc)	4.5V, 10V	240mOhm @ 5A, 10V	3V @ 250µA	17.5 nC @ 10 V	±20V	1239 pF @ 25 V	-	42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.