Single FETs, MOSFETs

Showing

of 15

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

G3R30MT12K SIC MOSFET N-CH 90A TO247-4 GeneSiC Semiconductor	1,719 In Stock	1 : $22.53000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	90A (Tc)	15V	36mOhm @ 50A, 15V	2.69V @ 12mA	155 nC @ 15 V	±15V	3901 pF @ 800 V	-	400W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
UF3SC120009K4S SICFET N-CH 1200V 120A TO247-4 Qorvo	1,216 In Stock	1 : $79.67000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	120A (Tc)	12V	11mOhm @ 100A, 12V	6V @ 10mA	234 nC @ 15 V	±20V	8512 pF @ 100 V	-	789W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
NVH4L020N120SC1 SICFET N-CH 1200V 102A TO247 onsemi	487 In Stock	1 : $81.99000 Tube	Automotive, AEC-Q101	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	102A (Tc)	20V	28mOhm @ 60A, 20V	4.3V @ 20mA	220 nC @ 20 V	+25V, -15V	2943 pF @ 800 V	-	510W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
G3R20MT17K SIC MOSFET N-CH 124A TO247-4 GeneSiC Semiconductor	768 In Stock	1 : $107.20000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	124A (Tc)	15V	26mOhm @ 75A, 15V	2.7V @ 15mA	400 nC @ 15 V	±15V	10187 pF @ 1000 V	-	809W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
G2R50MT33K 3300V 50M TO-247-4 SIC MOSFET GeneSiC Semiconductor	60 In Stock	1 : $295.67000 Tube	G2R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	3300 V	63A (Tc)	20V	50mOhm @ 40A, 20V	3.5V @ 10mA (Typ)	340 nC @ 20 V	+25V, -10V	7301 pF @ 1000 V	Standard	536W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
G3R45MT17K SIC MOSFET N-CH 61A TO247-4 GeneSiC Semiconductor	606 In Stock	1 : $33.07000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	61A (Tc)	15V	58mOhm @ 40A, 15V	2.7V @ 8mA	182 nC @ 15 V	±15V	4523 pF @ 1000 V	-	438W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
MSC080SMA330B4 MOSFET SIC 3300 V 80 MOHM TO-247 Microchip Technology	0 In Stock Check Lead Time	1 : $138.06000 Bulk	-	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	3300 V	41A (Tc)	20V	105mOhm @ 30A, 20V	2.97V @ 3mA	55 nC @ 20 V	+23V, -10V	3462 pF @ 2400 V	-	381W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-4	TO-247-4
MSC035SMA170B MOSFET SIC 1700 V 45 MOHM TO-247 Microchip Technology	45 In Stock	1 : $40.57000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	68A (Tc)	20V	45mOhm @ 30A, 20V	3.25V @ 2.5mA (Typ)	178 nC @ 20 V	+23V, -10V	3300 pF @ 1000 V	-	370W (Tc)	-60°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
MSC017SMA120B MOSFET SIC 1200V 17 MOHM TO-247 Microchip Technology	27 In Stock	1 : $46.56000 Bulk	-	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	113A (Tc)	20V	22mOhm @ 40A, 20V	2.7V @ 4.5mA (Typ)	249 nC @ 20 V	+22V, -10V	5280 pF @ 1000 V	-	455W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
MSC400SMA330B4 MOSFET SIC 3300 V 400 MOHM TO-24 Microchip Technology	0 In Stock Check Lead Time	1 : $32.11000 Bulk	-	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	3300 V	11A (Tc)	20V	520mOhm @ 5A, 20V	2.97V @ 1mA	37 nC @ 20 V	+23V, -10V	579 pF @ 2400 V	-	131W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-4	TO-247-4
MSC025SMA120B4 TRANS SJT N-CH 1200V 103A TO247 Microchip Technology	1 In Stock	1 : $41.33000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	103A (Tc)	20V	31mOhm @ 40A, 20V	2.8V @ 3mA	232 nC @ 20 V	+23V, -10V	3020 pF @ 1000 V	-	500W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
C2M0045170P SICFET N-CH 1700V 72A TO247-4 Wolfspeed, Inc.	0 In Stock Check Lead Time	1 : $93.93000 Tube	C2M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	72A (Tc)	20V	59mOhm @ 50A, 20V	4V @ 18mA	188 nC @ 20 V	+25V, -10V	3672 pF @ 1000 V	-	520W (Tc)	-40°C ~ 150°C (TJ)	Through Hole	TO-247-4L	TO-247-4
MSC035SMA170S MOSFET SIC 1700V 35 MOHM TO-268 Microchip Technology	30 In Stock	1 : $41.50000 Bulk	-	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	59A (Tc)	20V	45mOhm @ 30A, 20V	3.25V @ 2.5mA (Typ)	178 nC @ 20 V	+23V, -10V	3300 pF @ 1000 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D3PAK	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
MSC750SMA170B4 TRANS SJT 1700V TO247-4 Microchip Technology	2 In Stock	1 : $5.61000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	7A (Tc)	20V	940mOhm @ 2.5A, 20V	3.25V @ 100µA (Typ)	11 nC @ 20 V	+23V, -10V	184 pF @ 1360 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
NTH4L028N170M1 SIC MOSFET 1700 V 28 MOHM M1 SER onsemi	0 In Stock Check Lead Time	1 : $40.12000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	81A (Tc)	20V	40mOhm @ 60A, 20V	4.3V @ 20mA	200 nC @ 20 V	+25V, -15V	4230 pF @ 800 V	-	535W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4

Showing

of 15

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

Single FETs, MOSFETs

Single FETs, MOSFETs

INFORMATION

HELP

CONTACT US

FOLLOW US