Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiToshiba Semiconductor and Storage
Series
-U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
210mA (Ta)3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.65V, 4.5V1.8V, 10V
Rds On (Max) @ Id, Vgs
50mOhm @ 3A, 10V3.4Ohm @ 10mA, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 1mA1.3V @ 250µA
Vgs (Max)
±10V±12V
Input Capacitance (Ciss) (Max) @ Vds
11 pF @ 10 V560 pF @ 15 V
Power Dissipation (Max)
310mW (Ta)500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C
Supplier Device Package
ES6SOT-723
Package / Case
SOT-563, SOT-666SOT-723
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-723_631AA
NTK3043NT1G
MOSFET N-CH 20V 210MA SOT723
onsemi
35,491
In Stock
1 : $0.34000
Cut Tape (CT)
4,000 : $0.06137
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
210mA (Ta)
1.65V, 4.5V
3.4Ohm @ 10mA, 4.5V
1.3V @ 250µA
-
±10V
11 pF @ 10 V
-
310mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-723
SOT-723
11,044
In Stock
1 : $0.40000
Cut Tape (CT)
4,000 : $0.10736
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
3.6A (Ta)
1.8V, 10V
50mOhm @ 3A, 10V
1.2V @ 1mA
7.9 nC @ 4.5 V
±12V
560 pF @ 15 V
-
500mW (Ta)
150°C
Surface Mount
ES6
SOT-563, SOT-666
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.