Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
SCT3160KLGC11 SICFET N-CH 1200V 17A TO247N Rohm Semiconductor	1,285 In Stock	1 : $5.78000 Tube	-	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17A (Tc)	18V	208mOhm @ 5A, 18V	5.6V @ 2.5mA	42 nC @ 18 V	+22V, -4V	398 pF @ 800 V	-	103W (Tc)	175°C (TJ)	-	-	Through Hole	TO-247N	TO-247-3
IMZ120R060M1HXKSA1 SICFET N-CH 1.2KV 36A TO247-4 Infineon Technologies	561 In Stock	1 : $9.88000 Tube	Tariff may apply if shipping to the United States	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	15V, 18V	78mOhm @ 13A, 18V	5.7V @ 5.6mA	31 nC @ 18 V	+23V, -7V	1060 pF @ 800 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-1	TO-247-4
IMW120R030M1HXKSA1 SICFET N-CH 1.2KV 56A TO247-3 Infineon Technologies	893 In Stock	1 : $13.48000 Tube	-	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	56A (Tc)	15V, 18V	40mOhm @ 25A, 18V	5.7V @ 10mA	63 nC @ 18 V	+23V, -7V	2120 pF @ 800 V	-	227W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-41	TO-247-3
IMW120R020M1HXKSA1 SIC DISCRETE Infineon Technologies	404 In Stock	1 : $20.70000 Tube	-	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	98A (Tc)	15V, 18V	26.9mOhm @ 41A, 18V	5.2V @ 17.6mA	109 nC @ 18 V	+20V, -5V	3460 pF @ 800 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
C3M0075120K SICFET N-CH 1200V 30A TO247-4L Wolfspeed, Inc.	1,766 In Stock	1 : $23.24000 Tube	Tariff may apply if shipping to the United States	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	30A (Tc)	15V	90mOhm @ 20A, 15V	4V @ 5mA	51 nC @ 15 V	+19V, -8V	1350 pF @ 1000 V	-	113.6W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4L	TO-247-4
IMW120R007M1HXKSA1 SIC DISCRETE Infineon Technologies	398 In Stock	1 : $47.97000 Tube	-	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	225A (Tc)	15V, 18V	9.9mOhm @ 108A, 18V	5.2V @ 47mA	289 nC @ 18 V	+20V, -5V	9170 pF @ 800 V	-	750W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
IMW120R090M1HXKSA1 SICFET N-CH 1.2KV 26A TO247-3 Infineon Technologies	233 In Stock	1 : $6.71000 Tube	-	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	26A (Tc)	15V, 18V	117mOhm @ 8.5A, 18V	5.7V @ 3.7mA	21 nC @ 18 V	+23V, -7V	707 pF @ 800 V	-	115W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3-41	TO-247-3
AIMW120R060M1HXKSA1 1200V COOLSIC MOSFET PG-TO247-3 Infineon Technologies	220 In Stock	1 : $27.75000 Tube	-	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	18V	78mOhm @ 13A, 18V	5.7V @ 5.6mA	31 nC @ 18 V	+23V, -7V	1060 pF @ 800 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-3-41	TO-247-3
IMZA120R020M1HXKSA1 SIC DISCRETE Infineon Technologies	43 In Stock	1 : $21.15000 Tube	-	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	98A (Tc)	15V, 18V	26.9mOhm @ 41A, 18V	5.2V @ 17.6mA	109 nC @ 18 V	+20V, -5V	3460 pF @ 800 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-8	TO-247-4
G2R1000MT17D SIC MOSFET N-CH 4A TO247-3 GeneSiC Semiconductor	0 In Stock Check Lead Time	1 : $5.44000 Tube	-	G2R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	5A (Tc)	20V	1.2Ohm @ 2A, 20V	5.5V @ 500µA	11 nC @ 20 V	+25V, -10V	111 pF @ 1000 V	-	44W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.