Single FETs, MOSFETs

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	Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
	IRLB8721PBF MOSFET N-CH 30V 62A TO220AB Infineon Technologies	2,280 In Stock	1 : $1.57000 Tube	-	HEXFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	62A (Tc)	4.5V, 10V	8.7mOhm @ 31A, 10V	2.35V @ 25µA	13 nC @ 4.5 V	±20V	1077 pF @ 15 V	-	65W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
	PSMN2R0-30PL,127 MOSFET N-CH 30V 100A TO220AB Nexperia USA Inc.	0 In Stock	5,000 : $1.15312 Tube	-	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	100A (Tc)	4.5V, 10V	2.1mOhm @ 15A, 10V	2.15V @ 1mA	117 nC @ 10 V	±20V	6810 pF @ 12 V	-	211W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.