Single FETs, MOSFETs

Results: 9
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Mfr Part #
Quantity Available
Price
Tariff Status
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
EPC2203
EPC2203
GANFET N-CH 80V 1.7A DIE
EPC
44,908
In Stock
1 : $1.47000
Cut Tape (CT)
2,500 : $0.39445
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
80 V
1.7A (Ta)
5V
80mOhm @ 1A, 5V
2.5V @ 600µA
0.83 nC @ 5 V
+5.75V, -4V
88 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
Die
Die
eGaN Series
EPC2036
GANFET N-CH 100V 1.7A DIE
EPC
921
In Stock
1 : $1.97000
Cut Tape (CT)
2,500 : $0.55415
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
1.7A (Ta)
5V
65mOhm @ 1A, 5V
2.5V @ 600µA
0.91 nC @ 5 V
+6V, -4V
90 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
EPC2016C
GANFET N-CH 100V 18A DIE
EPC
62,785
In Stock
1 : $3.40000
Cut Tape (CT)
2,500 : $1.08750
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
100 V
18A (Ta)
5V
16mOhm @ 11A, 5V
2.5V @ 3mA
4.5 nC @ 5 V
+6V, -4V
420 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC2212
EPC2212
GANFET N-CH 100V 18A DIE
EPC
107,143
In Stock
1 : $3.94000
Cut Tape (CT)
2,500 : $1.32500
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
100 V
18A (Ta)
5V
13.5mOhm @ 11A, 5V
2.5V @ 3mA
4 nC @ 5 V
+6V, -4V
407 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
Die
Die
eGaN Series
EPC2045
GANFET N-CH 100V 16A DIE
EPC
36,909
In Stock
1 : $4.84000
Cut Tape (CT)
2,500 : $1.75000
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
100 V
16A (Ta)
5V
7mOhm @ 16A, 5V
2.5V @ 5mA
6.5 nC @ 5 V
+6V, -4V
685 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
EPC2001C
GANFET N-CH 100V 36A DIE OUTLINE
EPC
64,191
In Stock
1 : $5.98000
Cut Tape (CT)
2,500 : $2.32500
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
100 V
36A (Ta)
5V
7mOhm @ 25A, 5V
2.5V @ 5mA
9 nC @ 5 V
+6V, -4V
900 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
EPC2010C
GANFET N-CH 200V 22A DIE OUTLINE
EPC
3,357
In Stock
1 : $7.97000
Cut Tape (CT)
2,500 : $3.41250
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
200 V
22A (Ta)
5V
25mOhm @ 12A, 5V
2.5V @ 3mA
5.3 nC @ 5 V
+6V, -4V
540 pF @ 100 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
eGaN Series
EPC2040
GANFET NCH 15V 3.4A DIE
EPC
28,312
In Stock
1 : $1.75000
Cut Tape (CT)
2,500 : $0.48407
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
15 V
3.4A (Ta)
5V
30mOhm @ 1.5A, 5V
2.5V @ 1mA
0.93 nC @ 5 V
-
105 pF @ 6 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
EPC2202
EPC2202
GANFET N-CH 80V 18A DIE
EPC
35,129
In Stock
1 : $3.85000
Cut Tape (CT)
2,500 : $1.28750
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
80 V
18A (Ta)
5V
17mOhm @ 11A, 5V
2.5V @ 3mA
4 nC @ 5 V
+5.75V, -4V
415 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
Die
Die
Showing
of 9

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.