2.6A (Tc) Single FETs, MOSFETs

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Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SI2333DS-T1-GE3
SI2308CDS-T1-GE3
MOSFET N-CH 60V 2.6A SOT23-3
Vishay Siliconix
103,227
In Stock
1 : $0.38000
Cut Tape (CT)
3,000 : $0.09894
Tape & Reel (TR)
Tariff may apply if shipping to the United States
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2.6A (Tc)
4.5V, 10V
144mOhm @ 1.9A, 10V
3V @ 250µA
4 nC @ 10 V
±20V
105 pF @ 30 V
-
1.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SIA477EDJ-T1-GE3
SIA456DJ-T1-GE3
MOSFET N-CH 200V 2.6A PPAK SC70
Vishay Siliconix
6,575
In Stock
1 : $0.96000
Cut Tape (CT)
3,000 : $0.36516
Tape & Reel (TR)
Tariff may apply if shipping to the United States
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
2.6A (Tc)
1.8V, 4.5V
1.38Ohm @ 750mA, 4.5V
1.4V @ 250µA
14.5 nC @ 10 V
±16V
350 pF @ 100 V
-
3.5W (Ta), 19W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
IPN60R1K0CEATMA1
IPN60R3K4CEATMA1
MOSFET N-CH 600V 2.6A SOT223
Infineon Technologies
3,013
In Stock
1 : $0.67000
Cut Tape (CT)
3,000 : $0.16072
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
2.6A (Tc)
10V
3.4Ohm @ 500mA, 10V
3.5V @ 40µA
4.6 nC @ 10 V
±20V
93 pF @ 100 V
-
5W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT223-3
TO-261-4, TO-261AA
PG-TO252-3
IPD60R3K4CEAUMA1
MOSFET N-CH 600V 2.6A TO252-3
Infineon Technologies
2,578
In Stock
1 : $0.73000
Cut Tape (CT)
2,500 : $0.16866
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
2.6A (Tc)
10V
3.4Ohm @ 500mA, 10V
3.5V @ 40µA
4.6 nC @ 10 V
±20V
93 pF @ 100 V
-
29W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR9220TRLPBF
IRFR210PBF
MOSFET N-CH 200V 2.6A DPAK
Vishay Siliconix
13,092
In Stock
1 : $0.81000
Tube
Tariff may apply if shipping to the United States
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
2.6A (Tc)
10V
1.5Ohm @ 1.6A, 10V
4V @ 250µA
8.2 nC @ 10 V
±20V
140 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
FCD2250N80Z
MOSFET N-CH 800V 2.6A DPAK
onsemi
9,493
In Stock
1 : $1.96000
Cut Tape (CT)
2,500 : $0.65724
Tape & Reel (TR)
Tariff may apply if shipping to the United States
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
2.6A (Tc)
10V
2.25Ohm @ 1.3A, 10V
4.5V @ 260µA
14 nC @ 10 V
±20V
585 pF @ 100 V
-
39W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFU110PBF
IRFU210PBF
MOSFET N-CH 200V 2.6A TO251AA
Vishay Siliconix
11,303
In Stock
1 : $0.50000
Tube
Tariff may apply if shipping to the United States
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
2.6A (Tc)
10V
1.5Ohm @ 1.6A, 10V
4V @ 250µA
8.2 nC @ 10 V
±20V
140 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-251AA
TO-251-3 Short Leads, IPAK, TO-251AA
IRFR9220TRLPBF
IRFR210TRPBF
MOSFET N-CH 200V 2.6A DPAK
Vishay Siliconix
7,552
In Stock
1 : $1.22000
Cut Tape (CT)
2,000 : $0.50000
Tape & Reel (TR)
Tariff may apply if shipping to the United States
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
2.6A (Tc)
10V
1.5Ohm @ 1.6A, 10V
4V @ 250µA
8.2 nC @ 10 V
±20V
140 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHD5N80AE-GE3
IRFR210TRPBF-BE3
MOSFET N-CH 200V 2.6A DPAK
Vishay Siliconix
5,885
In Stock
1 : $1.23000
Cut Tape (CT)
2,000 : $0.50000
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
2.6A (Tc)
-
1.5Ohm @ 1.6A, 10V
4V @ 250µA
8.2 nC @ 10 V
±20V
140 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220AB Full Pack
IRFI720GPBF
MOSFET N-CH 400V 2.6A TO220-3
Vishay Siliconix
995
In Stock
1 : $2.87000
Tube
Tariff may apply if shipping to the United States
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
400 V
2.6A (Tc)
10V
1.8Ohm @ 1.6A, 10V
4V @ 250µA
20 nC @ 10 V
±20V
410 pF @ 25 V
-
30W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-3PF
STFW3N170
MOSFET N-CH 1700V 2.6A ISOWATT
STMicroelectronics
662
In Stock
1 : $5.85000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1700 V
2.6A (Tc)
10V
13Ohm @ 1.3A, 10V
5V @ 250µA
44 nC @ 10 V
±30V
1100 pF @ 100 V
-
63W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-3PF
TO-3P-3 Full Pack
IRFR9220TRLPBF
IRFR210TRLPBF
MOSFET N-CH 200V 2.6A DPAK
Vishay Siliconix
4,671
In Stock
1 : $1.23000
Cut Tape (CT)
3,000 : $0.50184
Tape & Reel (TR)
Tariff may apply if shipping to the United States
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
2.6A (Tc)
10V
1.5Ohm @ 1.6A, 10V
4V @ 250µA
8.2 nC @ 10 V
±20V
140 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHD5N80AE-GE3
IRFR210PBF-BE3
MOSFET N-CH 200V 2.6A DPAK
Vishay Siliconix
2,984
In Stock
1 : $1.23000
Tube
-
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
2.6A (Tc)
-
1.5Ohm @ 1.6A, 10V
4V @ 250µA
8.2 nC @ 10 V
±20V
140 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHD5N80AE-GE3
IRFR210TRLPBF-BE3
MOSFET N-CH 200V 2.6A DPAK
Vishay Siliconix
3,000
In Stock
1 : $1.93000
Cut Tape (CT)
3,000 : $0.53221
Tape & Reel (TR)
-
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
2.6A (Tc)
-
1.5Ohm @ 1.6A, 10V
4V @ 250µA
8.2 nC @ 10 V
±20V
140 pF @ 25 V
-
2.5W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
MJD44H11-1G
NDD03N60Z-1G
MOSFET N-CH 600V 2.6A IPAK
onsemi
0
In Stock
43,072
Marketplace
1,214 : $0.25000
Tube
-
-
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
2.6A (Tc)
10V
3.6Ohm @ 1.2A, 10V
4.5V @ 50µA
12 nC @ 10 V
±30V
312 pF @ 25 V
-
61W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
TO-252-3
NDD03N50ZT4G
MOSFET N-CH 500V 2.6A DPAK
onsemi
0
In Stock
20,236
Marketplace
841 : $0.36000
Bulk
-
-
Tape & Reel (TR)
Cut Tape (CT)
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
500 V
2.6A (Tc)
10V
3.3Ohm @ 1.15A, 10V
4.5V @ 50µA
16 nC @ 10 V
±30V
329 pF @ 25 V
-
58W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
MJD44H11-1G
NDD03N50Z-1G
MOSFET N-CH 500V 2.6A IPAK
onsemi
0
In Stock
2,656
Marketplace
841 : $0.36000
Tube
-
-
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
500 V
2.6A (Tc)
10V
3.3Ohm @ 1.15A, 10V
4.5V @ 50µA
10 nC @ 10 V
±30V
274 pF @ 25 V
-
58W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
INFINFIPAN60R360PFD7SXKSA1
IRF613
N-CHANNEL POWER MOSFET
Harris Corporation
2,940
Marketplace
753 : $0.40000
Bulk
-
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
150 V
2.6A (Tc)
10V
2.4Ohm @ 1.6A, 10V
4V @ 250µA
8.2 nC @ 10 V
±20V
135 pF @ 25 V
-
43W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
MJD32CTF-ON
FQD4N50TM
MOSFET N-CH 500V 2.6A DPAK
Fairchild Semiconductor
3,035
Marketplace
683 : $0.44000
Bulk
-
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
500 V
2.6A (Tc)
10V
2.7Ohm @ 1.3A, 10V
5V @ 250µA
13 nC @ 10 V
±30V
460 pF @ 25 V
-
2.5W (Ta), 45W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
IRG4RC10UTRPBF
FQD4N50TF
MOSFET N-CH 500V 2.6A DPAK
Fairchild Semiconductor
2,257
Marketplace
560 : $0.54000
Bulk
-
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
500 V
2.6A (Tc)
10V
2.7Ohm @ 1.3A, 10V
5V @ 250µA
13 nC @ 10 V
±30V
460 pF @ 25 V
-
2.5W (Ta), 45W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPN60R1K0CEATMA1
IPN50R3K0CEATMA1
MOSFET N-CH 500V 2.6A SOT223
Infineon Technologies
3,351
In Stock
1 : $0.62000
Cut Tape (CT)
3,000 : $0.14313
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Obsolete
N-Channel
MOSFET (Metal Oxide)
500 V
2.6A (Tc)
13V
3Ohm @ 400mA, 13V
3.5V @ 30µA
4.3 nC @ 10 V
±20V
84 pF @ 100 V
-
5W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT223-3
TO-261-4, TO-261AA
MC78M05BTG
BUZ76A
N-CHANNEL POWER MOSFET
Harris Corporation
10,000
Marketplace
406 : $0.74000
Bulk
-
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
400 V
2.6A (Tc)
10V
2.5Ohm @ 1.5A, 10V
4V @ 1mA
-
±20V
500 pF @ 25 V
-
40W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
I-PAK
FQU4N50TU-WS
MOSFET N-CH 500V 2.6A IPAK
onsemi
0
In Stock
45,360
Marketplace
620 : $0.82000
Tube
Tariff may apply if shipping to the United States
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
500 V
2.6A (Tc)
10V
2.7Ohm @ 1.3A, 10V
5V @ 250µA
13 nC @ 10 V
±30V
460 pF @ 25 V
-
2.5W (Ta), 45W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
INFINFIPAN60R360PFD7SXKSA1
FQPF4N60
MOSFET N-CH 600V 2.6A TO220F
Fairchild Semiconductor
4,775
Marketplace
353 : $0.85000
Tube
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
2.6A (Tc)
10V
2.2Ohm @ 1.3A, 10V
5V @ 250µA
20 nC @ 10 V
±30V
670 pF @ 25 V
-
36W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220F-3
TO-220-3 Full Pack
ISL9N302AS3
FQU4N50TU
MOSFET N-CH 500V 2.6A IPAK
Fairchild Semiconductor
27,877
Marketplace
326 : $0.92000
Tube
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
500 V
2.6A (Tc)
10V
2.7Ohm @ 1.3A, 10V
5V @ 250µA
13 nC @ 10 V
±30V
460 pF @ 25 V
-
2.5W (Ta), 45W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
IPAK
TO-251-3 Short Leads, IPAK, TO-251AA
Showing
of 45

2.6A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.