2.3A (Tc) Single FETs, MOSFETs

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of 24

Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
SQ2308CES-T1_BE3 MOSFET N-CH 60V 2.3A SOT23-3 Vishay Siliconix	15,971 In Stock	1 : $0.93000 Cut Tape (CT) 3,000 : $0.22591 Tape & Reel (TR)	-	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	60 V	2.3A (Tc)	4.5V, 10V	150mOhm @ 2.3A, 10V	2.5V @ 250µA	5.3 nC @ 10 V	±20V	205 pF @ 30 V	-	2W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SQ2308FES-T1_GE3 MOSFET N-CH 60V 2.3A SOT23 Vishay Siliconix	9,975 In Stock	1 : $0.58000 Cut Tape (CT) 3,000 : $0.13096 Tape & Reel (TR)	-	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	2.3A (Tc)	4.5V, 10V	150mOhm @ 2.3A, 10V	2.5V @ 250µA	5.3 nC @ 10 V	±20V	205 pF @ 30 V	-	2W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI2324DS-T1-GE3 MOSFET N-CH 100V 2.3A SOT23-3 Vishay Siliconix	32,758 In Stock	1 : $0.91000 Cut Tape (CT) 3,000 : $0.21916 Tape & Reel (TR)	Tariff may apply if shipping to the United States	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	2.3A (Tc)	10V	234mOhm @ 1.5A, 10V	2.9V @ 250µA	10.4 nC @ 10 V	±20V	190 pF @ 50 V	-	1.25W (Ta), 2.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
STL3N65M2 MOSFET N-CH 650V 2.3A POWERFLAT STMicroelectronics	3,391 In Stock	1 : $1.44000 Cut Tape (CT) 3,000 : $0.37588 Tape & Reel (TR)	-	MDmesh™ M2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	650 V	2.3A (Tc)	10V	1.8Ohm @ 1A, 10V	4V @ 250µA	5 nC @ 10 V	±25V	155 pF @ 100 V	-	22W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerFlat™ (3.3x3.3)	8-PowerVDFN
IPD60R2K1CEAUMA1 MOSFET N-CH 600V 2.3A TO252-3 Infineon Technologies	8,936 In Stock	1 : $0.83000 Cut Tape (CT) 2,500 : $0.19519 Tape & Reel (TR)	-	CoolMOS™ CE	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	2.3A (Tc)	10V	2.1Ohm @ 760mA, 10V	3.5V @ 60µA	6.7 nC @ 10 V	±20V	140 pF @ 100 V	-	38W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
STD3NK50ZT4 MOSFET N-CH 500V 2.3A DPAK STMicroelectronics	756 In Stock	1 : $1.82000 Cut Tape (CT) 2,500 : $0.50652 Tape & Reel (TR)	Tariff may apply if shipping to the United States	SuperMESH™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	500 V	2.3A (Tc)	10V	3.3Ohm @ 1.15A, 10V	4.5V @ 50µA	15 nC @ 10 V	±30V	280 pF @ 25 V	-	45W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFP5N100PM MOSFET N-CH 1000V 2.3A TO220 IXYS	196 In Stock	1 : $8.62000 Tube	-	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	2.3A (Tc)	10V	2.8Ohm @ 2.5A, 10V	6V @ 250µA	33.4 nC @ 10 V	±30V	1830 pF @ 25 V	-	42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
IPU60R2K1CEBKMA1 MOSFET N-CH 600V 2.3A TO251-3 Infineon Technologies	0 In Stock 6,512 Marketplace	1,288 : $0.23000 Tube	Tariff may apply if shipping to the United States	CoolMOS™ CE	Tube Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	2.3A (Tc)	10V	2.1Ohm @ 760mA, 10V	3.5V @ 60µA	6.7 nC @ 10 V	±20V	140 pF @ 100 V	-	22W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPAK, TO-251AA
IRLM120ATF MOSFET N-CH 100V 2.3A SOT223-4 onsemi	0 In Stock 3,707 Marketplace	4,000 : $0.29336 Tape & Reel (TR) 653 : $0.46000 Bulk	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	2.3A (Tc)	5V	220mOhm @ 1.15A, 5V	2V @ 250µA	15 nC @ 5 V	±20V	440 pF @ 25 V	-	2.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
IPL60R2K1C6SATMA1 MOSFET N-CH 600V 2.3A THIN-PAK Infineon Technologies	0 In Stock 176,342 Marketplace	626 : $0.48000 Bulk	-	CoolMOS™ C6	Tape & Reel (TR) Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	2.3A (Tc)	10V	2.1Ohm @ 760mA, 10V	3.5V @ 60µA	6.7 nC @ 10 V	±20V	140 pF @ 100 V	-	21.6W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TSON-8-2	8-PowerTDFN
STP3NK50Z MOSFET N-CH 500V 2.3A TO220AB STMicroelectronics	3,575 In Stock	1 : $1.19000 Tube	Tariff may apply if shipping to the United States	SuperMESH™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	2.3A (Tc)	10V	3.3Ohm @ 1.15A, 10V	4.5V @ 50µA	15 nC @ 10 V	±30V	280 pF @ 25 V	-	45W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
FQI2P25TU MOSFET P-CH 250V 2.3A I2PAK Fairchild Semiconductor	1,000 Marketplace	252 : $1.19000 Tube	-	QFET®	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	250 V	2.3A (Tc)	10V	4Ohm @ 1.15A, 10V	5V @ 250µA	8.5 nC @ 10 V	±30V	250 pF @ 25 V	-	3.13W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-262 (I2PAK)	TO-262-3 Long Leads, I2PAK, TO-262AA
FQPF3N25 MOSFET N-CH 250V 2.3A TO220F Fairchild Semiconductor	204,011 Marketplace	478 : $0.63000 Bulk	-	QFET®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	250 V	2.3A (Tc)	10V	2.2Ohm @ 1.15A, 10V	5V @ 250µA	5.2 nC @ 10 V	±30V	170 pF @ 25 V	-	27W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F-3	TO-220-3 Full Pack
DIJ2A3N65 MOSFET ITO-220AB N 650V 2.3A Diotec Semiconductor	0 In Stock Check Lead Time	1,000 : $0.32906 Bulk	-	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	650 V	2.3A (Tc)	10V	2.6Ohm @ 3.5A, 10V	4V @ 250µA	13 nC @ 10 V	±30V	560 pF @ 25 V	-	30W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ITO-220F	TO-220-3 Full Pack
FQPF4N50 MOSFET N-CH 500V 2.3A TO220F onsemi	0 In Stock	1,000 : $0.44504 Tube	Tariff may apply if shipping to the United States	QFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	2.3A (Tc)	10V	2.7Ohm @ 1.15A, 10V	5V @ 250µA	13 nC @ 10 V	±30V	460 pF @ 25 V	-	35W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F-3	TO-220-3 Full Pack
FQPF3N25 MOSFET N-CH 250V 2.3A TO220F onsemi	0 In Stock	1,000 : $0.48067 Tube	Tariff may apply if shipping to the United States	QFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	250 V	2.3A (Tc)	10V	2.2Ohm @ 1.15A, 10V	5V @ 250µA	5.2 nC @ 10 V	±30V	170 pF @ 25 V	-	27W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220F-3	TO-220-3 Full Pack
SI2308BDS-T1-E3 MOSFET N-CH 60V 2.3A SOT23-3 Vishay Siliconix	0 In Stock	Obsolete	Tariff may apply if shipping to the United States	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	2.3A (Tc)	4.5V, 10V	156mOhm @ 1.9A, 10V	3V @ 250µA	6.8 nC @ 10 V	±20V	190 pF @ 30 V	-	1.09W (Ta), 1.66W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SQ2308CES-T1_GE3 MOSFET N-CH 60V 2.3A SOT23 Vishay Siliconix	0 In Stock	Obsolete	Tariff may apply if shipping to the United States	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	2.3A (Tc)	4.5V, 10V	150mOhm @ 2.3A, 10V	2.5V @ 250µA	5.3 nC @ 10 V	±20V	205 pF @ 30 V	-	2W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
FQP2P25 MOSFET P-CH 250V 2.3A TO220-3 onsemi	0 In Stock	Obsolete	Tariff may apply if shipping to the United States	QFET®	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	250 V	2.3A (Tc)	10V	4Ohm @ 1.15A, 10V	5V @ 250µA	8.5 nC @ 10 V	±30V	250 pF @ 25 V	-	52W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
SI2308BDS-T1-GE3 MOSFET N-CH 60V 2.3A SOT23-3 Vishay Siliconix	0 In Stock	Obsolete	Tariff may apply if shipping to the United States	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	2.3A (Tc)	4.5V, 10V	156mOhm @ 1.9A, 10V	3V @ 250µA	6.8 nC @ 10 V	±20V	190 pF @ 30 V	-	1.09W (Ta), 1.66W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
STD3NK50Z-1 MOSFET N-CH 500V 2.3A IPAK STMicroelectronics	0 In Stock	Obsolete	Tariff may apply if shipping to the United States	SuperMESH™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	2.3A (Tc)	10V	3.3Ohm @ 1.15A, 10V	4.5V @ 50µA	15 nC @ 10 V	±30V	280 pF @ 25 V	-	45W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
IRFR420BTM MOSFET N-CH 500V 2.3A DPAK onsemi	0 In Stock	Obsolete	Tariff may apply if shipping to the United States	-	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	2.3A (Tc)	10V	2.6Ohm @ 1.15A, 10V	4V @ 250µA	18 nC @ 10 V	±30V	610 pF @ 25 V	-	2.5W (Ta), 41W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD60R2K1CEBTMA1 MOSFET N-CH 600V 2.3A TO252-3 Infineon Technologies	0 In Stock	Obsolete	-	CoolMOS™ CE	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	2.3A (Tc)	10V	2.1Ohm @ 760mA, 10V	3.5V @ 60µA	6.7 nC @ 10 V	±20V	140 pF @ 100 V	-	22W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
SQ2308FES-T1_BE3 MOSFET N-CH 60V 2.3A SOT23-3 Vishay Siliconix	0 In Stock	Active	-	TrenchFET®	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	2.3A (Tc)	4.5V, 10V	150mOhm @ 2.3A, 10V	2.5V @ 250µA	5.3 nC @ 10 V	±20V	205 pF @ 30 V	-	2W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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