17.3A (Ta) Single FETs, MOSFETs

Showing

of 6

Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
SI4491EDY-T1-GE3 MOSFET P-CH 30V 17.3A 8SO Vishay Siliconix	5,722 In Stock	1 : $1.36000 Cut Tape (CT) 2,500 : $0.40051 Tape & Reel (TR)	Tariff may apply if shipping to the United States	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	17.3A (Ta)	4.5V, 10V	6.5mOhm @ 13A, 10V	2.8V @ 250µA	153 nC @ 10 V	±25V	4620 pF @ 15 V	-	3.1W (Ta), 6.9W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
TK17A65W,S5X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	34 In Stock	1 : $3.65000 Tube	-	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	17.3A (Ta)	10V	200mOhm @ 8.7A, 10V	3.5V @ 900µA	45 nC @ 10 V	±30V	1800 pF @ 300 V	-	45W (Tc)	150°C	-	-	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK17A65W5,S5X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	45 In Stock	1 : $3.81000 Tube	-	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	17.3A (Ta)	10V	230mOhm @ 8.7A, 10V	4.5V @ 900µA	50 nC @ 10 V	±30V	1800 pF @ 300 V	-	45W (Tc)	150°C	-	-	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK17E65W,S1X MOSFET N-CH 650V 17.3A TO220 Toshiba Semiconductor and Storage	23 In Stock	1 : $4.78000 Tube	-	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	17.3A (Ta)	10V	200mOhm @ 8.7A, 10V	3.5V @ 900µA	45 nC @ 10 V	±30V	1800 pF @ 300 V	-	165W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
TK17V65W,LQ X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	14 In Stock	1 : $5.17000 Cut Tape (CT) 2,500 : $1.91625 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	650 V	17.3A (Ta)	10V	210mOhm @ 8.7A, 10V	3.5V @ 900µA	45 nC @ 10 V	±30V	1800 pF @ 300 V	-	156W (Tc)	150°C	-	-	Surface Mount	4-DFN-EP (8x8)	4-VSFN Exposed Pad
TK17N65W,S1F MOSFET N-CH 650V 17.3A TO247 Toshiba Semiconductor and Storage	0 In Stock Check Lead Time	1 : $5.48000 Tube	-	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	17.3A (Ta)	10V	200mOhm @ 8.7A, 10V	3.5V @ 900µA	45 nC @ 10 V	±30V	1800 pF @ 300 V	-	165W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247	TO-247-3

Showing

of 6

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.