123A (Tc) Single FETs, MOSFETs

Results: 16
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Showing
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
112
In Stock
1 : $84.42000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
2000 V
123A (Tc)
15V, 18V
16.5mOhm @ 60A, 18V
5.5V @ 48mA
246 nC @ 18 V
+20V, -7V
-
-
552W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U04
TO-247-4
SQJ142ELP-T1_GE3
SQJ152ELP-T1_GE3
MOSFET N-CH 40V 123A PPAK SO-8
Vishay Siliconix
6,838
In Stock
1 : $1.11000
Cut Tape (CT)
3,000 : $0.34782
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
123A (Tc)
4.5V, 10V
5mOhm @ 15A, 10V
2.2V @ 250µA
34 nC @ 10 V
±20V
1633 pF @ 25 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
8-PQFN
FDMS4D4N08C
MOSFET N-CH 80V 123A 8PQFN
onsemi
2,214
In Stock
1 : $3.17000
Cut Tape (CT)
3,000 : $1.07800
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
123A (Tc)
6V, 10V
4.3mOhm @ 44A, 10V
4V @ 250µA
56 nC @ 10 V
±20V
4090 pF @ 40 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PQFN (5x6), Power56
8-PowerTDFN
391
In Stock
1 : $13.93000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
123A (Tc)
10V
16mOhm @ 62.5A, 10V
4.7V @ 1.48mA
171 nC @ 10 V
±20V
7545 pF @ 400 V
-
521W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-4-U02
TO-247-4
PG-TO263-3
AUIRFS8403TRL
MOSFET N-CH 40V 123A D2PAK
Infineon Technologies
0
In Stock
800
Marketplace
235 : $1.28000
Bulk
Tape & Reel (TR)
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
40 V
123A (Tc)
10V
3.3mOhm @ 70A, 10V
3.9V @ 100µA
93 nC @ 10 V
±20V
3183 pF @ 25 V
-
99W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MJD32CTF-ON
AUIRFS8403TRR
MOSFET N-CH 40V 123A D2PAK
International Rectifier
800
Marketplace
208 : $1.45000
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
40 V
123A (Tc)
-
3.3mOhm @ 70A, 10V
3.9V @ 100µA
93 nC @ 10 V
±20V
3183 pF @ 25 V
-
99W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-264-3
NTY100N10G
MOSFET N-CH 100V 123A TO264
onsemi
0
In Stock
1,350
Marketplace
38 : $7.95000
Tube
-
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
123A (Tc)
10V
10mOhm @ 50A, 10V
4V @ 250µA
350 nC @ 10 V
±20V
10110 pF @ 25 V
-
313W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-264
TO-264-3, TO-264AA
ISL9N302AS3
AUIRFSL8403
MOSFET N-CH 40V 123A TO262
International Rectifier
3,030
Marketplace
307 : $0.98000
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
40 V
123A (Tc)
10V
3.3mOhm @ 70A, 10V
3.9V @ 100µA
93 nC @ 10 V
±20V
3183 pF @ 25 V
-
99W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
MJD32CTF-ON
AUIRFS8403
MOSFET N-CH 40V 123A D2PAK
International Rectifier
7,413
Marketplace
235 : $1.28000
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
40 V
123A (Tc)
10V
3.3mOhm @ 70A, 10V
3.9V @ 100µA
93 nC @ 10 V
±20V
3183 pF @ 25 V
-
99W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RF1S9640SM9A
AUIRFS8403
AUIRFS8403 - 20V-40V N-CHANNEL A
Infineon Technologies
6,000
Marketplace
235 : $1.28000
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
40 V
123A (Tc)
10V
3.3mOhm @ 70A, 10V
3.9V @ 100µA
93 nC @ 10 V
±20V
3183 pF @ 25 V
-
99W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RF1S9640SM9A
AUIRFS8403TRL
AUIRFS8403 - 20V-40V N-CHANNEL A
International Rectifier
800
Marketplace
235 : $1.28000
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
40 V
123A (Tc)
10V
3.3mOhm @ 70A, 10V
3.9V @ 100µA
93 nC @ 10 V
±20V
3183 pF @ 25 V
-
99W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
0
In Stock
Check Lead Time
1 : $12.93000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
123A (Tc)
10V
16mOhm @ 62.5A, 10V
4.7V @ 1.48mA
171 nC @ 10 V
±20V
7545 pF @ 400 V
-
521W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-U06
TO-247-3
SOT-227-4, miniBLOC
GCMX015A170S1-E1
SIC MOSFET MOD
SemiQ
0
In Stock
Check Lead Time
1 : $55.23000
Tube
-
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1700 V
123A (Tc)
20V
20mOhm @ 100A, 20V
4V @ 40mA
430 nC @ 20 V
+25V, -10V
12803 pF @ 1.2 kV
-
652W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
TO-264-3
NTY100N10
MOSFET N-CH 100V 123A TO264
onsemi
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
123A (Tc)
10V
10mOhm @ 50A, 10V
4V @ 250µA
350 nC @ 10 V
±20V
10110 pF @ 25 V
-
313W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-264
TO-264-3, TO-264AA
PG-TO263-3
AUIRFS8403
MOSFET N-CH 40V 123A D2PAK
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
40 V
123A (Tc)
10V
3.3mOhm @ 70A, 10V
3.9V @ 100µA
93 nC @ 10 V
±20V
3183 pF @ 25 V
-
99W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-262-3
AUIRFSL8403
MOSFET N-CH 40V 123A TO262
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
40 V
123A (Tc)
10V
3.3mOhm @ 70A, 10V
3.9V @ 100µA
93 nC @ 10 V
±20V
3183 pF @ 25 V
-
99W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
Showing
of 16

123A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.