RF FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	Frequency	Gain	Voltage - Test	Current Rating (Amps)	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Mounting Type	Package / Case	Supplier Device Package

IGN1011L70 GAN, RF POWER TRANSISTOR, L-BAND Integra Technologies Inc.	11 In Stock	1 : $212.26000 Bulk	-	Bulk	Active	GaN HEMT	-	1.03GHz ~ 1.09GHz	22dB	50 V	-	-	22 mA	80W	120 V	Chassis Mount	PL32A2	PL32A2
IGN1011L1200 GAN, RF POWER TRANSISTOR, L-BAND Integra Technologies Inc.	6 In Stock	1 : $794.03000 Tray	-	Tray	Active	HEMT	-	1.03GHz ~ 1.09GHz	16.8dB	50 V	-	-	160 mA	1250W	180 V	-	PL84A1	PL84A1
IGN1214L500B GAN, RF POWER TRANSISTOR, L-BAND Integra Technologies Inc.	2 In Stock	1 : $884.50000 Tray	-	Tray	Active	HEMT	-	1.2GHz ~ 1.4GHz	15dB	50 V	-	-	200 mA	650W	160 V	-	PL95A1	PL95A1
IGT8292M50 GAN, RF POWER TRANSISTOR, X-BAND Integra Technologies Inc.	10 In Stock	1 : $571.12000 Tray	*	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
IGT5259CW50 GAN, RF POWER TRANSISTOR, C-BAND Integra Technologies Inc.	8 In Stock	1 : $658.12000 Tray	*	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
IGN0912LM500 GAN, RF POWER TRANSISTOR, L-BAND Integra Technologies Inc.	10 In Stock	1 : $684.77000 Tray	*	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
IGN2729M400R2 GAN, RF POWER TRANSISTOR, S-BAND Integra Technologies Inc.	10 In Stock	1 : $692.57000 Tray	*	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
IGN1214M300 GAN, RF POWER TRANSISTOR, L-BAND Integra Technologies Inc.	10 In Stock	1 : $810.69000 Tray	*	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
IGT2731M130 GAN, RF POWER TRANSISTOR, S-BAND Integra Technologies Inc.	0 In Stock Check Lead Time	5 : $582.65600 Tray	-	Tray	Active	HEMT	N-Channel	2.7GHz ~ 3.1GHz	16dB @ 2.7GHz ~ 3.1GHz	50 V	-	-	25 mA	130W	16 V	Chassis Mount	PL44A1	PL44A1
IGT1112M90 GAN, RF POWER TRANSISTOR, X-BAND Integra Technologies Inc.	0 In Stock Check Lead Time	5 : $1,125.32800 Tray	*	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-

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RF FETs, MOSFETs

RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.