RF FETs, MOSFETs

Showing

of 10

Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	Technology	Configuration	Frequency	Gain	Voltage - Test	Current Rating (Amps)	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Mounting Type	Package / Case	Supplier Device Package
IGN1011L1200 RF MOSFET HEMT 50V PL84A1 Integra Technologies Inc.	4 In Stock	1 : $761.79000 Tray	-	-	Tray	Active	HEMT	-	1.03GHz ~ 1.09GHz	16.8dB	50 V	-	-	160 mA	1250W	180 V	-	PL84A1	PL84A1
IGN1011L70 RF MOSFET GAN HEMT 50V PL32A2 Integra Technologies Inc.	11 In Stock	1 : $190.69000 Bulk	-	-	Bulk	Active	GaN HEMT	-	1.03GHz ~ 1.09GHz	22dB	50 V	-	-	22 mA	80W	120 V	Chassis Mount	PL32A2	PL32A2
IGN0912LM500 RF MOSFET Integra Technologies Inc.	9 In Stock	1 : $674.57000 Tray	-	*	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
IGN2729M400R2 RF MOSFET Integra Technologies Inc.	10 In Stock	1 : $681.57000 Tray	-	*	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
IGN1214M300 RF MOSFET Integra Technologies Inc.	10 In Stock	1 : $786.85000 Tray	-	*	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
IGN1214L500B RF MOSFET HEMT 50V PL95A1 Integra Technologies Inc.	0 In Stock Check Lead Time	1 : $1,085.87000 Tray	-	-	Tray	Active	HEMT	-	1.2GHz ~ 1.4GHz	15dB	50 V	-	-	200 mA	650W	160 V	-	PL95A1	PL95A1
IGT2731M130 RF MOSFET HEMT 50V PL44A1 Integra Technologies Inc.	0 In Stock Check Lead Time	5 : $582.65600 Tray	-	-	Tray	Active	HEMT	N-Channel	2.7GHz ~ 3.1GHz	16dB	50 V	-	-	25 mA	130W	16 V	Chassis Mount	PL44A1	PL44A1
IGT8292M50 RF MOSFET Integra Technologies Inc.	0 In Stock Check Lead Time	5 : $631.50800 Tray	-	*	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
IGT5259CW50 RF MOSFET Integra Technologies Inc.	0 In Stock Check Lead Time	5 : $658.12000 Tray	-	*	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
IGT1112M90 RF MOSFET Integra Technologies Inc.	0 In Stock Check Lead Time	5 : $1,125.32800 Tray	-	*	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-

Showing

of 10

RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.