FET, MOSFET Arrays

Results: 2
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)N and P-Channel
FET Feature
-Logic Level Gate
Drain to Source Voltage (Vdss)
25V100V
Current - Continuous Drain (Id) @ 25°C
680mA, 460mA1A
Rds On (Max) @ Id, Vgs
450mOhm @ 500mA, 4.5V500mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.3nC @ 5V5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V153pF @ 50V
Stocking Options
Environmental Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SG6858TZ
FDC6321C
MOSFET N/P-CH 25V 0.68A SSOT6
onsemi
32,318
In Stock
1 : $0.61000
Cut Tape (CT)
3,000 : $0.20559
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveMOSFET (Metal Oxide)N and P-ChannelLogic Level Gate25V680mA, 460mA450mOhm @ 500mA, 4.5V1.5V @ 250µA2.3nC @ 5V50pF @ 10V700mW-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-6SuperSOT™-6
SG6858TZ
FDC3601N
MOSFET 2N-CH 100V 1A SSOT6
onsemi
2,000
In Stock
1 : $0.65000
Cut Tape (CT)
3,000 : $0.21735
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)-100V1A500mOhm @ 1A, 10V4V @ 250µA5nC @ 10V153pF @ 50V700mW-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-6SuperSOT™-6
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FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.