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Results: 5
Manufacturer
Central Semiconductor CorpMicrochip Technologyonsemi
Packaging
BulkCut Tape (CT)Tape & Box (TB)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
200 mA800 mA
Voltage - Collector Emitter Breakdown (Max)
15 V40 V50 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA400mV @ 5mA, 50mA500mV @ 10mA, 100mA1V @ 50mA, 500mA-
Current - Collector Cutoff (Max)
50nA50nA (ICBO)400nA (ICBO)-
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA, 350mV100 @ 10mA, 1V100 @ 150mA, 10V
Power - Max
360 mW500 mW625 mW
Frequency - Transition
250MHz300MHz500MHz-
Operating Temperature
-65°C ~ 150°C (TJ)-65°C ~ 200°C (TJ)-55°C ~ 150°C (TJ)
Package / Case
TO-206AA, TO-18-3 Metal CanTO-226-3, TO-92-3 (TO-226AA)TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-18TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3 Formed Leads
2N3904TA
TRANS NPN 40V 0.2A TO92-3
onsemi
15,226
In Stock
28,000
Factory
1 : $0.27000
Cut Tape (CT)
2,000 : $0.05840
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
7,881
In Stock
1 : $0.42000
Bulk
-
Bulk
Active
PNP
-
40 V
-
50nA (ICBO)
100 @ 10mA, 1V
-
250MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
39
In Stock
1 : $2.36000
Bulk
-
Bulk
Active
NPN
200 mA
15 V
500mV @ 10mA, 100mA
400nA (ICBO)
40 @ 10mA, 350mV
360 mW
500MHz
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
TO-18
2N2222A
TRANS NPN 50V 0.8A TO18
Microchip Technology
0
In Stock
Check Lead Time
1 : $2.90000
Bulk
-
Bulk
Active
NPN
800 mA
50 V
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
500 mW
-
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
TO-92-3(StandardBody),TO-226_straightlead
2N3906BU
BJT TO92 40V PNP 0.625W 150C
onsemi
0
In Stock
Check Lead Time
1 : $0.27000
Bulk
-
Bulk
Active
PNP
200 mA
40 V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
250MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
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Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion. BJTs come in two varieties - NPN and PNP - which refer to the sequence of semiconductor layers that make up the transistor. NPN transistors consist of a thin P-type semiconductor between two N-type materials, while PNP transistors have an N-type semiconductor between two P-types. This gives the two types opposite polarity operation. NPN transistors sink current, while PNP transistors source current.