Single Bipolar Transistors

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	Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
	TIP41C TRANS NPN 100V 6A TO-220 STMicroelectronics	3,719 In Stock	1 : $1.12000 Tube	-	-	Tube	Active	NPN	6 A	100 V	1.5V @ 600mA, 6A	700µA	15 @ 3A, 4V	65 W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220
	TIP42C TRANS PNP 100V 6A TO-220 STMicroelectronics	5,410 In Stock	1 : $1.20000 Tube	Tariff may apply if shipping to the United States	-	Tube	Active	PNP	6 A	100 V	1.5V @ 600mA, 6A	700µA	15 @ 3A, 4V	65 W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220

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Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion. BJTs come in two varieties - NPN and PNP - which refer to the sequence of semiconductor layers that make up the transistor. NPN transistors consist of a thin P-type semiconductor between two N-type materials, while PNP transistors have an N-type semiconductor between two P-types. This gives the two types opposite polarity operation. NPN transistors sink current, while PNP transistors source current.