Single Bipolar Transistors

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

BDW94C TRANS PNP DARL 100V 12A TO220-3 onsemi	10,384 In Stock	1 : $1.04000 Bulk	-	Bulk	Active	PNP - Darlington	12 A	100 V	3V @ 100mA, 10A	1mA	750 @ 5A, 3V	80 W	-	150°C (TJ)	Through Hole	TO-220-3	TO-220-3
TIP142G TRANS NPN DARL 100V 10A TO247-3 onsemi	832 In Stock	1 : $2.05000 Tube	-	Tube	Active	NPN - Darlington	10 A	100 V	3V @ 40mA, 10A	2mA	1000 @ 5A, 4V	125 W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
TIP147G TRANS PNP DARL 100V 10A TO247-3 onsemi	1,009 In Stock	1 : $2.79000 Tube	-	Tube	Active	PNP - Darlington	10 A	100 V	3V @ 40mA, 10A	2mA	1000 @ 5A, 4V	125 W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
TIP142 TRANS NPN DARL 100V 10A TO247 STMicroelectronics	0 In Stock Check Lead Time	1 : $2.31000 Tube	-	Tube	Active	NPN - Darlington	10 A	100 V	3V @ 40mA, 10A	2mA	1000 @ 5A, 4V	125 W	-	150°C (TJ)	Through Hole	TO-247-3	TO-247
TIP147 TRANS PNP DARL 100V 10A TO247 STMicroelectronics	751 In Stock	1 : $1.57000 Tube	-	Tube	Active	PNP - Darlington	10 A	100 V	3V @ 40mA, 10A	2mA	1000 @ 5A, 4V	125 W	-	150°C (TJ)	Through Hole	TO-247-3	TO-247

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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.