Bipolar RF Transistors

Results: 2
Packaging
BulkTray
Voltage - Collector Emitter Breakdown (Max)
35V40V
Frequency - Transition
30MHz-
Gain
10dB ~ 13dB13dB
Power - Max
150W290W
Package / Case
211-11, Style 1211-11, Style 2
Supplier Device Package
211-11, Style 1211-11, Style 2
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MRF422
MRF422
RF TRANS NPN 35V 211-11
MACOM Technology Solutions
268
In Stock
1 : $118.45000
Tray
-
Tray
ActiveNPN35V--13dB150W15 @ 5A, 5V20A-Chassis Mount211-11, Style 2211-11, Style 2
TRANSISTOR, 150W, 30MHZ,28V,MATC
MRF422MP
TRANSISTOR, 150W, 30MHZ,28V,MATC
MACOM Technology Solutions
0
In Stock
Check Lead Time
9 : $203.78556
Bulk
-
Bulk
ActiveNPN40V30MHz-10dB ~ 13dB290W15 @ 5A, 5V20A-Chassis Mount211-11, Style 1211-11, Style 1
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Bipolar RF Transistors


Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.