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Mfr Part #
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Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
2302
2301
P20V,RD(MAX)<56M@-4.5V,RD(MAX)<8
Goford Semiconductor
2,850
In Stock
1 : $0.38000
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3,000 : $0.07140
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ActiveP-ChannelMOSFET (Metal Oxide)20 V3A (Ta)2.5V, 4.5V56mOhm @ 1.7A, 4.5V900mV @ 250µA12 nC @ 2.5 V±10V405 pF @ 10 V-1W (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-23TO-236-3, SC-59, SOT-23-3
2302
2302
MOSFET N-CH 20V 4.3A SOT-23
Goford Semiconductor
7,921
In Stock
1 : $0.43000
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3,000 : $0.07938
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-
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ActiveN-ChannelMOSFET (Metal Oxide)20 V4.3A (Ta)2.5V, 4.5V27mOhm @ 2.2A, 4.5V1.1V @ 250µA10 nC @ 4.5 V±10V300 pF @ 10 VStandard1W (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
G6N02L
G3035L
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
Goford Semiconductor
5,967
In Stock
1 : $0.43000
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3,000 : $0.07980
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-
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ActiveP-ChannelMOSFET (Metal Oxide)30 V4.1A (Ta)4.5V, 10V59mOhm @ 2.1A, 10V2V @ 250µA12.5 nC @ 10 V±20V650 pF @ 15 V-1.4W (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
2302
G29
P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4
Goford Semiconductor
13,190
In Stock
1 : $0.45000
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3,000 : $0.08400
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-
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ActiveP-ChannelMOSFET (Metal Oxide)20 V6A-30mOhm @ 3A, 4.5V900mV @ 250µA12.5 nC @ 10 V±12V1151 pF @ 10 V-1W-55°C ~ 150°C (TJ)Surface MountSOT-23TO-236-3, SC-59, SOT-23-3
2302
3401
MOSFET P-CH 30V 4.2A SOT-23
Goford Semiconductor
9,804
In Stock
1 : $0.45000
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3,000 : $0.08400
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ActiveP-ChannelMOSFET (Metal Oxide)30 V4.2A (Ta)4.5V, 10V55mOhm @ 4.2A, 10V1.3V @ 250µA9.5 nC @ 4.5 V±12V950 pF @ 15 VStandard1.2W (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
2302
G2305
P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7
Goford Semiconductor
9,000
In Stock
1 : $0.45000
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3,000 : $0.08400
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ActiveP-ChannelMOSFET (Metal Oxide)20 V4.8A (Ta)2.5V, 4.5V50mOhm @ 4.1A, 4.5V1V @ 250µA7.8 nC @ 4.5 V±12V--1.7W (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
2302
03N06
N60V,RD(MAX)<100M@10V,RD(MAX)<12
Goford Semiconductor
9,336
In Stock
1 : $0.45000
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3,000 : $0.08400
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-
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ActiveN-ChannelMOSFET (Metal Oxide)60 V3A-100mOhm @ 2A, 10V1.2V @ 250µA14.6 nC @ 30 V±20V510 pF @ 30 V-1.7W-55°C ~ 150°C (TJ)Surface MountSOT-23TO-236-3, SC-59, SOT-23-3
2302
G06P01E
P12V,RD(MAX)<28M@-4.5V,RD(MAX)<4
Goford Semiconductor
8,865
In Stock
1 : $0.45000
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3,000 : $0.08400
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-
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ActiveP-ChannelMOSFET (Metal Oxide)12 V4A (Tc)1.8V, 4.5V28mOhm @ 3A, 4.5V1V @ 250µA14 nC @ 4.5 V±10V1087 pF @ 6 V-1.8W (Tc)-55°C ~ 150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
2302
G3035
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
Goford Semiconductor
8,447
In Stock
1 : $0.45000
Cut Tape (CT)
3,000 : $0.08400
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-
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ActiveP-ChannelMOSFET (Metal Oxide)30 V4.6A (Tc)4.5V, 10V59mOhm @ 4A, 10V2V @ 250µA13 nC @ 10 V±20V650 pF @ 15 V-1.4W (Tc)-55°C ~ 150°C (TJ)Surface MountSOT-23TO-236-3, SC-59, SOT-23-3
2302
G2304
MOSFET N-CH 30V 3.6A SOT-23
Goford Semiconductor
8,990
In Stock
1 : $0.46000
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3,000 : $0.08505
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ActiveN-ChannelMOSFET (Metal Oxide)30 V3.6A (Ta)4.5V, 10V58mOhm @ 3.6A, 10V2.2V @ 250µA4 nC @ 10 V±20V230 pF @ 15 VStandard1.7W (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
2302
3415A
P20V,RD(MAX)<45M@-4.5V,RD(MAX)<6
Goford Semiconductor
11,995
In Stock
1 : $0.39000
Cut Tape (CT)
3,000 : $0.08694
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-
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ActiveP-ChannelMOSFET (Metal Oxide)20 V4A (Ta)2.5V, 4.5V45mOhm @ 4A, 4.5V900mV @ 250µA12 nC @ 4.5 V±10V950 pF @ 10 V-1.4W (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
2302
1002
N100V,RD(MAX)<250M@10V,RD(MAX)<2
Goford Semiconductor
3,000
In Stock
1 : $0.50000
Cut Tape (CT)
3,000 : $0.09240
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-
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ActiveN-ChannelMOSFET (Metal Oxide)100 V2A-250mOhm @ 2A, 10V3V @ 250µA10 nC @ 10 V±20V387 pF @ 10 V-1.3W-55°C ~ 150°C (TJ)Surface MountSOT-23TO-236-3, SC-59, SOT-23-3
G6N02L
G6N02L
MOSFET N-CH 20V 6A SOT-23-3L
Goford Semiconductor
3,147
In Stock
1 : $0.43000
Cut Tape (CT)
3,000 : $0.09450
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ActiveN-ChannelMOSFET (Metal Oxide)20 V6A (Tc)2.5V, 4.5V11.3mOhm @ 3A, 4.5V0.9V @ 250µA12.5 nC @ 10 V±12V1140 pF @ 10 VStandard1.8W (Tc)-55°C ~ 150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
2302
G02P06
P60V,RD(MAX)<190M@-10V,RD(MAX)<2
Goford Semiconductor
7,450
In Stock
1 : $0.43000
Cut Tape (CT)
3,000 : $0.09450
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-
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ActiveP-ChannelMOSFET (Metal Oxide)60 V1.6A-190mOhm @ 1A, 10V2.5V @ 250µA11.3 nC @ 10 V±20V573 pF @ 30 V-1.5W-55°C ~ 150°C (TJ)Surface MountSOT-23TO-236-3, SC-59, SOT-23-3
G6N02L
5P40
P40V,RD(MAX)<85M@-10V,RD(MAX)<12
Goford Semiconductor
13,517
In Stock
1 : $0.47000
Cut Tape (CT)
3,000 : $0.10395
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ActiveP-ChannelMOSFET (Metal Oxide)40 V5.3A (Ta)4.5V, 10V85mOhm @ 5A, 10V3V @ 250µA14 nC @ 10 V±20V650 pF @ 20 V-2W (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
G6N02L
3400L
N30V,RD(MAX)<27M@10V,RD(MAX)<33M
Goford Semiconductor
2,950
In Stock
1 : $0.47000
Cut Tape (CT)
3,000 : $0.10395
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ActiveN-ChannelMOSFET (Metal Oxide)30 V5.6A-59mOhm @ 2.8A, 2.5V1.4V @ 250µA9.5 nC @ 4.5 V±12V820 pF @ 15 V-1.4W-55°C ~ 150°C (TJ)Surface MountSOT-23-3LTO-236-3, SC-59, SOT-23-3
G6N02L
G1003B
N100V,RD(MAX)<170M@10V,RD(MAX)<1
Goford Semiconductor
10,749
In Stock
1 : $0.38000
Cut Tape (CT)
3,000 : $0.10915
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-
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ActiveN-ChannelMOSFET (Metal Oxide)100 V3A-130mOhm @ 1A, 10V2V @ 250µA30 nC @ 10 V±20V760 pF @ 50 V-3.3W-55°C ~ 150°C (TJ)Surface MountSOT-23-3LTO-236-3, SC-59, SOT-23-3
G6N02L
G05P06L
P60V,RD(MAX)<120M@-10V,RD(MAX)<1
Goford Semiconductor
5,830
In Stock
1 : $0.38000
Cut Tape (CT)
3,000 : $0.10915
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-
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ActiveP-ChannelMOSFET (Metal Oxide)60 V5A (Tc)4.5V, 10V120mOhm @ 4A, 10V2.5V @ 250µA37 nC @ 10 V±20V1366 pF @ 50 V-4.3W (Tc)-55°C ~ 150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
G6N02L
03N06L
N60V,RD(MAX)<100M@10V,RD(MAX)<12
Goford Semiconductor
6,800
In Stock
1 : $0.49000
Cut Tape (CT)
3,000 : $0.10962
Tape & Reel (TR)
-
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ActiveN-ChannelMOSFET (Metal Oxide)60 V3A-100mOhm @ 2A, 10V1.2V @ 250µA14.6 nC @ 30 V±20V510 pF @ 30 V-1.7W-55°C ~ 150°C (TJ)Surface MountSOT-23-3LTO-236-3, SC-59, SOT-23-3
G6N02L
G01N20LE
N200V,RD(MAX)<850M@10V,RD(MAX)<9
Goford Semiconductor
7,155
In Stock
1 : $0.43000
Cut Tape (CT)
3,000 : $0.12127
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-
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ActiveN-ChannelMOSFET (Metal Oxide)200 V1.7A (Tc)4.5V, 10V850mOhm @ 1.7A, 10V2.5V @ 250µA12 nC @ 10 V±20V580 pF @ 25 V-1.5W (Tc)-55°C ~ 150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
G6N02L
G7P03L
P30V,RD(MAX)<23M@-10V,RD(MAX)<34
Goford Semiconductor
4,970
In Stock
1 : $0.45000
Cut Tape (CT)
3,000 : $0.12821
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ActiveP-ChannelMOSFET (Metal Oxide)30 V7A (Tc)4.5V, 10V23mOhm @ 3A, 10V2.5V @ 250µA29 nC @ 10 V±20V1500 pF @ 15 V-1.9W (Tc)-55°C ~ 150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
G2012
G20N03D2
N30V,RD(MAX)<24M@10V,RD(MAX)<29M
Goford Semiconductor
3,000
In Stock
1 : $0.48000
Cut Tape (CT)
3,000 : $0.13687
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ActiveN-ChannelMOSFET (Metal Oxide)30 V9A (Tc)4.5V, 10V24mOhm @ 5A, 10V2V @ 250µA20 nC @ 10 V±20V873 pF @ 30 V-1.5W (Tc)-55°C ~ 150°C (TJ)Surface Mount6-DFN (2x2)6-WDFN Exposed Pad
P-60V,-18A,RD(MAX)<70M@-10V,VTH-
G700P06D3
P-60V,-18A,RD(MAX)<70M@-10V,VTH-
Goford Semiconductor
5,000
In Stock
1 : $0.52000
Cut Tape (CT)
5,000 : $0.13834
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ActiveP-ChannelMOSFET (Metal Oxide)60 V18A (Tc)4.5V, 10V70mOhm @ 4A, 10V2.5V @ 250µA25 nC @ 10 V±20V1446 pF @ 30 V-32W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-DFN (3.15x3.05)8-PowerVDFN
G6N02L
G1006LE
N100V,RD(MAX)<150M@10V,RD(MAX)<1
Goford Semiconductor
7,658
In Stock
1 : $0.49000
Cut Tape (CT)
3,000 : $0.13860
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-
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ActiveN-ChannelMOSFET (Metal Oxide)100 V3A (Tc)4.5V, 10V150mOhm @ 3A, 10V2.2V @ 250µA18.2 nC @ 10 V±20V622 pF @ 50 V-1.5W (Tc)-55°C ~ 150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
G6N02L
G1003A
N100V,RD(MAX)<210M@10V,RD(MAX)<2
Goford Semiconductor
3,887
In Stock
1 : $0.49000
Cut Tape (CT)
3,000 : $0.13860
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-
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ActiveN-ChannelMOSFET (Metal Oxide)100 V3A (Tc)4.5V, 10V210mOhm @ 3A, 10V3V @ 250µA18.2 nC @ 10 V±20V622 pF @ 25 V-5W (Tc)-55°C ~ 150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
G2012
G2012
N20V,RD(MAX)<12M@4.5V,RD(MAX)<18
Goford Semiconductor
3,000
In Stock
1 : $0.41000
Cut Tape (CT)
3,000 : $0.14647
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-
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ActiveN-ChannelMOSFET (Metal Oxide)20 V12A (Tc)2.5V, 4.5V12mOhm @ 5A, 4.5V1V @ 250µA29 nC @ 10 V±10V1255 pF @ 10 V-1.5W (Tc)-55°C ~ 150°C (TJ)Surface Mount6-DFN (2x2)6-WDFN Exposed Pad
G30N04D3
G28N03D3
N30V,RD(MAX)<12M@10V,RD(MAX)<18M
Goford Semiconductor
5,000
In Stock
1 : $0.46000
Cut Tape (CT)
5,000 : $0.15225
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-
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ActiveN-ChannelMOSFET (Metal Oxide)30 V28A (Tc)4.5V, 10V12mOhm @ 16A, 10V2.5V @ 250µA15 nC @ 10 V±20V891 pF @ 15 V-20.5W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-DFN (3.15x3.05)8-PowerVDFN
G30N04D3
G170P03D3
P-30V, -20A,RD<18M@-10V,VTH-1V~-
Goford Semiconductor
5,000
In Stock
1 : $0.46000
Cut Tape (CT)
5,000 : $0.15225
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ActiveP-ChannelMOSFET (Metal Oxide)30 V20A4.5V, 10V------28W-Surface Mount8-DFN (3.15x3.05)8-PowerVDFN
25P06
G35N02K
N20V,RD(MAX)<13M@4.5V,RD(MAX)<18
Goford Semiconductor
4,714
In Stock
1 : $0.47000
Cut Tape (CT)
2,500 : $0.16763
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ActiveN-ChannelMOSFET (Metal Oxide)20 V35A (Tc)2.5V, 4.5V13mOhm @ 20A, 4.5V1.2V @ 250µA24 nC @ 4.5 V±12V1380 pF @ 10 V-40W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
25P06
G06N10
N100V,RD(MAX)<240M@10V,VTH1.2V~3
Goford Semiconductor
5,047
In Stock
1 : $0.48000
Cut Tape (CT)
2,500 : $0.16926
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ActiveN-ChannelMOSFET (Metal Oxide)100 V6A-240mOhm @ 6A, 10V3V @ 250µA6.2 nC @ 10 V±20V190 pF @ 50 V-25W-55°C ~ 175°C (TJ)Surface MountTO-252 (DPAK)TO-252-3, DPak (2 Leads + Tab), SC-63
G06N06S
G6P06
P60V,RD(MAX)<96M@-10V,RD(MAX)<14
Goford Semiconductor
7,900
In Stock
1 : $0.48000
Cut Tape (CT)
4,000 : $0.17089
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-
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ActiveP-ChannelMOSFET (Metal Oxide)60 V6A (Tc)4.5V, 10V96mOhm @ 4A, 10V3V @ 250µA25 nC @ 10 V±20V930 pF @ 30 V-4.1W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-SOP8-SOIC (0.154", 3.90mm Width)
G06N06S
G08N06S
N60V, RD(MAX)<30M@10V,RD(MAX)<40
Goford Semiconductor
7,870
In Stock
1 : $0.48000
Cut Tape (CT)
4,000 : $0.17089
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ActiveN-ChannelMOSFET (Metal Oxide)60 V6A (Ta)4.5V, 10V30mOhm @ 3A, 10V2.5V @ 250µA22 nC @ 10 V±20V979 pF @ 30 V-2W (Ta)-55°C ~ 150°C (TJ)Surface Mount8-SOP8-SOIC (0.154", 3.90mm Width)
25P06
G15N06K
N-CH, 60V,15A,RD(MAX)<45M@10V,RD
Goford Semiconductor
5,311
In Stock
1 : $0.55000
Cut Tape (CT)
2,500 : $0.19530
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ActiveN-ChannelMOSFET (Metal Oxide)60 V15A (Tc)4.5V, 10V45mOhm @ 8A, 10V3V @ 250µA25 nC @ 10 V±20V763 pF @ 30 V-40W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
G06N06S
G2K2P10SE
P-100V, 3.5A,RD<200M@-10V,VTH1V~
Goford Semiconductor
4,000
In Stock
1 : $0.55000
Cut Tape (CT)
4,000 : $0.19530
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ActiveP-ChannelMOSFET (Metal Oxide)100 V3.5A (Tc)4.5V, 10V200mOhm @ 3A, 10V2.5V @ 250µA23 nC @ 10 V±20V1653 pF @ 50 V-3.1W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-SOP8-SOIC (0.154", 3.90mm Width)
25P06
G20N03K
N30V,RD(MAX)<20M@10V,RD(MAX)<24M
Goford Semiconductor
4,765
In Stock
1 : $0.55000
Cut Tape (CT)
2,500 : $0.19530
Tape & Reel (TR)
-
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ActiveN-ChannelMOSFET (Metal Oxide)30 V30A (Tc)4.5V, 10V20mOhm @ 10A, 10V2.5V @ 250µA18 nC @ 10 V±20V923 pF @ 15 V-33W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
25P06
G12P04K
P40V,RD(MAX)<35M@-10V,RD(MAX)<45
Goford Semiconductor
4,721
In Stock
1 : $0.55000
Cut Tape (CT)
2,500 : $0.19530
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ActiveP-ChannelMOSFET (Metal Oxide)40 V12A (Tc)4.5V, 10V35mOhm @ 6A, 10V2.5V @ 250µA25 nC @ 10 V±20V930 pF @ 20 V-50W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
G30N04D3
G12P03D3
P30V,RD(MAX)<20M@-10V,RD(MAX)<26
Goford Semiconductor
9,005
In Stock
1 : $0.63000
Cut Tape (CT)
5,000 : $0.20706
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ActiveP-ChannelMOSFET (Metal Oxide)30 V12A (Tc)4.5V, 10V20mOhm @ 6A, 10V2V @ 250µA24.5 nC @ 10 V±20V1253 pF @ 15 V-3W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-DFN (3.15x3.05)8-PowerVDFN
G06N06S
G07P04S
P40V,RD(MAX)<18M@-10V,RD(MAX)<22
Goford Semiconductor
8,000
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4,000 : $0.21158
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ActiveP-ChannelMOSFET (Metal Oxide)40 V7A (Tc)4.5V, 10V18mOhm @ 7A, 10V2.5V @ 250µA24 nC @ 10 V±20V1750 pF @ 20 V-2.5W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-SOP8-SOIC (0.154", 3.90mm Width)
25P06
G10N10A
N100V,RD(MAX)130mOHM@10V,TO-252
Goford Semiconductor
4,851
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ActiveN-ChannelMOSFET (Metal Oxide)100 V10A (Ta)4.5V, 10V130mOhm @ 2A, 10V3V @ 250µA90 nC @ 10 V±20V690 pF @ 25 V-28W (Ta)-55°C ~ 150°C (TJ)Surface MountTO-252 (D-Pak)TO-252-3, DPak (2 Leads + Tab), SC-63
N60V, 25A,RD<27M@10V,VTH1.0V~2.5
G25N06K
N60V, 25A,RD<27M@10V,VTH1.0V~2.5
Goford Semiconductor
5,000
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1 : $0.64000
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2,500 : $0.22785
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ActiveN-ChannelMOSFET (Metal Oxide)60 V25A (Tc)10V27mOhm @ 20A, 10V2.5V @ 250µA25 nC @ 10 V±20V970 pF @ 30 V-45W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
25P06
G23N06K
N60V,RD(MAX)<35M@10V,RD(MAX)<45M
Goford Semiconductor
3,753
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1 : $0.64000
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2,500 : $0.22785
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ActiveN-ChannelMOSFET (Metal Oxide)60 V23A-35mOhm @ 20A, 10V2.5V @ 250µA25 nC @ 10 V±20V590 pF @ 15 V-38W-55°C ~ 150°C (TJ)Surface MountTO-252 (DPAK)TO-252-3, DPak (2 Leads + Tab), SC-63
25P06
G50N03K
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Goford Semiconductor
4,736
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ActiveN-ChannelMOSFET (Metal Oxide)30 V65A-7mOhm @ 20A, 10V2.5V @ 250µA16.6 nC @ 10 V±20V950 pF @ 15 V-48W-55°C ~ 150°C (TJ)Surface MountTO-252 (DPAK)TO-252-3, DPak (2 Leads + Tab), SC-63
25P06
G15P04K
P40V,RD(MAX)<39M@-10V,RD(MAX)<70
Goford Semiconductor
4,603
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2,500 : $0.22785
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ActiveP-ChannelMOSFET (Metal Oxide)40 V15A-39mOhm @ 10A, 10V3V @ 250µA25 nC @ 10 V±20V930 pF @ 20 V-50W-55°C ~ 150°C (TJ)Surface MountTO-252 (DPAK)TO-252-3, DPak (2 Leads + Tab), SC-63
G30N04D3
G16P03D3
P30V,RD(MAX)<12M@-10V,RD(MAX)<18
Goford Semiconductor
9,658
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1 : $0.63000
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5,000 : $0.22680
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ActiveP-ChannelMOSFET (Metal Oxide)30 V16A (Tc)4.5V, 10V12mOhm @ 10A, 10V2.5V @ 250µA35 nC @ 10 V±20V1995 pF @ 15 V-3W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-DFN (3.15x3.05)8-PowerVDFN
GT100N12D5
G50N03D5
N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M
Goford Semiconductor
5,000
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1 : $0.63000
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ActiveN-ChannelMOSFET (Metal Oxide)30 V50A (Tc)4.5V, 10V4.5mOhm @ 20A, 10V2.4V @ 250µA38.4 nC @ 10 V±20V1784 pF @ 15 V-20W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-DFN (4.9x5.75)8-PowerTDFN
G30N04D3
G48N03D3
N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4
Goford Semiconductor
5,000
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1 : $0.63000
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5,000 : $0.22680
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ActiveN-ChannelMOSFET (Metal Oxide)30 V48A (Tc)4.5V, 10V6mOhm @ 20A, 10V2.4V @ 250µA38 nC @ 10 V±20V1784 pF @ 15 V-45W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-DFN (3.15x3.05)8-PowerVDFN
G06N06S
G16P03S
P30V,RD(MAX)<12M@-10V,RD(MAX)<18
Goford Semiconductor
8,000
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4,000 : $0.23599
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ActiveP-ChannelMOSFET (Metal Oxide)30 V16A-12mOhm @ 10A, 10V2.5V @ 250µA35 nC @ 10 V±20V2800 pF @ 15 V-3W-55°C ~ 150°C (TJ)Surface Mount8-SOP8-SOIC (0.154", 3.90mm Width)
G06N06S
G06N06S
N60V,RD(MAX)<22M@10V,RD(MAX)<35M
Goford Semiconductor
6,146
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ActiveN-ChannelMOSFET (Metal Oxide)60 V8A-22mOhm @ 6A, 10V2.4V @ 250µA46 nC @ 10 V±20V1600 pF @ 30 V-2.1W-55°C ~ 150°C (TJ)Surface Mount8-SOP8-SOIC (0.154", 3.90mm Width)
25P06
5N20A
N200V,RD(MAX)<650M@10V,VTH1V~3V,
Goford Semiconductor
4,977
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ActiveN-ChannelMOSFET (Metal Oxide)200 V5A-650mOhm @ 2.5A, 10V3V @ 250µA10.8 nC @ 10 V±20V255 pF @ 25 V-78W-55°C ~ 150°C (TJ)Surface MountTO-252 (DPAK)TO-252-3, DPak (2 Leads + Tab), SC-63
GT100N12D5
G26P04D5
P40V,RD(MAX)<18M@-10V,RD(MAX)<22
Goford Semiconductor
7,871
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5,000 : $0.24098
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ActiveP-ChannelMOSFET (Metal Oxide)40 V26A (Tc)4.5V, 10V18mOhm @ 12A, 10V2.5V @ 250µA45 nC @ 10 V±20V2479 pF @ 20 V-50W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-DFN (4.9x5.75)8-PowerTDFN
25P06
G40P03K
P-30V,RD(MAX)<9.5M@-10V,RD(MAX)<
Goford Semiconductor
9,770
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ActiveP-ChannelMOSFET (Metal Oxide)30 V40A (Tc)4.5V, 10V9.5mOhm @ 15A, 10V2.5V @ 250µA30 nC @ 10 V±20V--138W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
G30N04D3
GT060N04D3
N40V,RD(MAX)<6.5M@10V,RD(MAX)<10
Goford Semiconductor
14,963
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1 : $0.69000
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5,000 : $0.24806
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ActiveN-ChannelMOSFET (Metal Oxide)40 V40A (Tc)4.5V, 10V6.5mOhm @ 30A, 10V2.5V @ 250µA32 nC @ 10 V±20V1282 pF @ 20 V-36W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-DFN (3.15x3.05)8-PowerVDFN
G30N04D3
G30N04D3
MOSFET N-CH 40V 30A DFN33-8L
Goford Semiconductor
9,060
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ActiveN-ChannelMOSFET (Metal Oxide)40 V30A (Tc)4.5V, 10V9.5mOhm @ 20A, 10V2.5V @ 250µA30 nC @ 10 V±20V1780 pF @ 20 VStandard19.8W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-DFN (3.15x3.05)8-PowerVDFN
G30N04D3
G08P06D3
P60V,RD(MAX)<52M@-10V,VTH-2V~-3.
Goford Semiconductor
7,764
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ActiveP-ChannelMOSFET (Metal Oxide)60 V8A (Tc)10V52mOhm @ 6A, 10V3.5V @ 250µA25 nC @ 10 V±20V2972 pF @ 30 V-40W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-DFN (3.15x3.05)8-PowerVDFN
N30V, 18A,RD<5M@10V,VTH1.1V~2.4V
G050N03S
N30V, 18A,RD<5M@10V,VTH1.1V~2.4V
Goford Semiconductor
4,000
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1 : $0.71000
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4,000 : $0.27405
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ActiveN-ChannelMOSFET (Metal Oxide)30 V18A (Tc)4.5V, 10V5mOhm @ 10A, 10V2.4V @ 250µA37 nC @ 10 V±20V1714 pF @ 15 V-2.1W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-SOP8-SOIC (0.154", 3.90mm Width)
25P06
G12P10K
P100V,RD(MAX)<200M@-10V,RD(MAX)<
Goford Semiconductor
4,637
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ActiveP-ChannelMOSFET (Metal Oxide)100 V12A-200mOhm @ 6A, 10V3V @ 250µA33 nC @ 10 V±20V1720 pF @ 50 V-57W-55°C ~ 150°C (TJ)Surface MountTO-252 (DPAK)TO-252-3, DPak (2 Leads + Tab), SC-63
25P06
G20P06K
P-60V, -20A,RD<45M@-10V,VTH-2V~-
Goford Semiconductor
2,545
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1 : $0.71000
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ActiveP-ChannelMOSFET (Metal Oxide)60 V20A (Tc)10V45mOhm @ 12A, 10V3.5V @ 250µA46 nC @ 10 V±20V3430 pF @ 30 V-90W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
25P06
60N06
N60V,RD(MAX)<17M@10V,RD(MAX)<21M
Goford Semiconductor
3,976
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1 : $0.75000
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2,500 : $0.28928
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ActiveN-ChannelMOSFET (Metal Oxide)60 V50A-17mOhm @ 5A, 10V2V @ 250µA50 nC @ 10 V±20V2050 pF @ 30 V-85W-55°C ~ 150°C (TJ)Surface MountTO-252 (DPAK)TO-252-3, DPak (2 Leads + Tab), SC-63
25P06
G26P04K
P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
Goford Semiconductor
5,279
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1 : $0.75000
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2,500 : $0.28928
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ActiveP-ChannelMOSFET (Metal Oxide)40 V26A (Tc)4.5V, 10V18mOhm @ 10A, 10V2.5V @ 250µA42 nC @ 10 V±20V--80W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
G06N06S
GT110N06S
N60V,RD(MAX)<15M@-4.5V,RD(MAX)<1
Goford Semiconductor
5,597
In Stock
1 : $0.76000
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4,000 : $0.29232
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ActiveN-ChannelMOSFET (Metal Oxide)60 V14A (Tc)4.5V, 10V11mOhm @ 14A, 10V2.4V @ 250µA24 nC @ 10 V±20V1300 pF @ 25 V-3W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-SOP8-SOIC (0.154", 3.90mm Width)
G30N04D3
G18P03D3
P30V,RD(MAX)<10M@-10V,RD(MAX)<15
Goford Semiconductor
5,985
In Stock
1 : $0.83000
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3,000 : $0.31973
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ActiveP-ChannelMOSFET (Metal Oxide)30 V28A (Tc)4.5V, 10V10mOhm @ 10A, 10V2.5V @ 250µA30 nC @ 10 V±20V2060 pF @ 15 V-40W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-DFN (3.15x3.05)8-PowerVDFN
25P06
GT090N06K
MOSFET, N-CH, 60V,45A,TO-252
Goford Semiconductor
1,791
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1 : $0.88000
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ActiveN-ChannelMOSFET (Metal Oxide)60 V45A (Tc)4.5V, 10V9mOhm @ 14A, 10V2.4V @ 250µA22 nC @ 10 V±20V1088 pF @ 30 V-52W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
25P06
25P06
P60V,RD(MAX)<45M@-10V,VTH2V~3V T
Goford Semiconductor
4,474
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1 : $0.87000
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2,500 : $0.36750
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ActiveP-ChannelMOSFET (Metal Oxide)60 V25A (Tc)10V45mOhm @ 12A, 10V3V @ 250µA37 nC @ 10 V±20V3384 pF @ 30 V-100W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
25P06
45P40
P40V,RD(MAX)<14M@-10V,VTH2V~3V T
Goford Semiconductor
8,554
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1 : $0.90000
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2,500 : $0.38220
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ActiveP-ChannelMOSFET (Metal Oxide)40 V45A (Tc)10V14mOhm @ 20A, 10V2.5V @ 250µA42 nC @ 10 V±20V2960 pF @ 20 V-80W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
25P06
G20P10KE
P-CH, -100V, 20A, RD(MAX)<116M@-
Goford Semiconductor
3,604
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1 : $0.90000
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2,500 : $0.38220
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ActiveP-ChannelMOSFET (Metal Oxide)100 V20A (Tc)10V116mOhm @ 16A, 10V3V @ 250µA70 nC @ 10 V±20V3354 pF @ 50 V-69W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
G06N06S
GT095N10S
N100V, 21A,RD<9.5M@10V,VTH1.2V~2
Goford Semiconductor
4,000
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1 : $0.94000
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4,000 : $0.39837
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ActiveN-ChannelMOSFET (Metal Oxide)100 V11A (Tc)4.5V, 10V9.5mOhm @ 20A, 10V2.6V @ 250µA29.4 nC @ 10