Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

G3R350MT12D SIC MOSFET N-CH 11A TO247-3 GeneSiC Semiconductor	3,169 In Stock	1 : $4.74000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	11A (Tc)	15V	420mOhm @ 4A, 15V	2.69V @ 2mA	12 nC @ 15 V	±15V	334 pF @ 800 V	-	74W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
G3R160MT12J SIC MOSFET N-CH 19A TO263-7 GeneSiC Semiconductor	364 In Stock	1 : $7.26000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	19A (Tc)	15V	208mOhm @ 10A, 15V	2.7V @ 5mA (Typ)	23 nC @ 15 V	+20V, -10V	724 pF @ 800 V	-	128W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
G3R450MT17J SIC MOSFET N-CH 9A TO263-7 GeneSiC Semiconductor	7,662 In Stock	1 : $8.04000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	9A (Tc)	15V	585mOhm @ 4A, 15V	2.7V @ 2mA	18 nC @ 15 V	±15V	454 pF @ 1000 V	-	91W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
G3R60MT07K 750V 60M TO-247-4 G3R SIC MOSFET GeneSiC Semiconductor	2,165 In Stock	1 : $10.40000 Tube	G3R™	Tube	Active	-	SiCFET (Silicon Carbide)	750 V	-	-	-	-	-	+20V, -10V	-	-	-	-	Through Hole	TO-247-4	TO-247-4
G3R75MT12D SIC MOSFET N-CH 41A TO247-3 GeneSiC Semiconductor	3,343 In Stock	1 : $10.50000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	15V	90mOhm @ 20A, 15V	2.69V @ 7.5mA	54 nC @ 15 V	±15V	1560 pF @ 800 V	-	207W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
G3R75MT12K SIC MOSFET N-CH 41A TO247-4 GeneSiC Semiconductor	1,423 In Stock	1 : $10.77000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	15V	90mOhm @ 20A, 15V	2.69V @ 7.5mA	54 nC @ 15 V	±15V	1560 pF @ 800 V	-	207W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
G3R75MT12J SIC MOSFET N-CH 42A TO263-7 GeneSiC Semiconductor	1,299 In Stock	1 : $11.03000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	42A (Tc)	15V	90mOhm @ 20A, 15V	2.69V @ 7.5mA	54 nC @ 15 V	±15V	1560 pF @ 800 V	-	224W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
G3R160MT17D SIC MOSFET N-CH 21A TO247-3 GeneSiC Semiconductor	1,104 In Stock	1 : $12.24000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	21A (Tc)	15V	208mOhm @ 12A, 15V	2.7V @ 5mA	51 nC @ 15 V	±15V	1272 pF @ 1000 V	-	175W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
G3R30MT12K SIC MOSFET N-CH 90A TO247-4 GeneSiC Semiconductor	1,557 In Stock	1 : $22.53000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	90A (Tc)	15V	36mOhm @ 50A, 15V	2.69V @ 12mA	155 nC @ 15 V	±15V	3901 pF @ 800 V	-	400W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
G3R30MT12J SIC MOSFET N-CH 96A TO263-7 GeneSiC Semiconductor	504 In Stock	1 : $22.83000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	96A (Tc)	15V	36mOhm @ 50A, 15V	2.69V @ 12mA	155 nC @ 15 V	±15V	3901 pF @ 800 V	-	459W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
G3R45MT17K SIC MOSFET N-CH 61A TO247-4 GeneSiC Semiconductor	900 In Stock	1 : $33.07000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	61A (Tc)	15V	58mOhm @ 40A, 15V	2.7V @ 8mA	182 nC @ 15 V	±15V	4523 pF @ 1000 V	-	438W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
G3R20MT17K SIC MOSFET N-CH 124A TO247-4 GeneSiC Semiconductor	4 In Stock	1 : $107.20000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	124A (Tc)	15V	26mOhm @ 75A, 15V	2.7V @ 15mA	400 nC @ 15 V	±15V	10187 pF @ 1000 V	-	809W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
G3R20MT17N SIC MOSFET N-CH 100A SOT227 GeneSiC Semiconductor	51 In Stock	1 : $135.46000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	100A (Tc)	15V	26mOhm @ 75A, 15V	2.7V @ 15mA	400 nC @ 15 V	±15V	10187 pF @ 1000 V	-	523W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
G3R350MT12J SIC MOSFET N-CH 11A TO263-7 GeneSiC Semiconductor	6,184 In Stock	1 : $5.51000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	11A (Tc)	15V	420mOhm @ 4A, 15V	2.69V @ 2mA	12 nC @ 15 V	±15V	334 pF @ 800 V	-	75W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
G3R60MT07D 750V 60M TO-247-3 G3R SIC MOSFET GeneSiC Semiconductor	1,195 In Stock	1 : $10.14000 Tube	G3R™	Tube	Active	-	SiCFET (Silicon Carbide)	750 V	-	-	-	-	-	+20V, -10V	-	-	-	-	Through Hole	TO-247-3	TO-247-3
G3R60MT07J 750V 60M TO-263-7 G3R SIC MOSFET GeneSiC Semiconductor	1,635 In Stock	1 : $10.70000 Tube	G3R™	Tube	Active	-	SiCFET (Silicon Carbide)	750 V	-	-	-	-	-	+20V, -10V	-	-	-	-	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
G3R40MT12J SIC MOSFET N-CH 75A TO263-7 GeneSiC Semiconductor	89 In Stock	1 : $17.98000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	75A (Tc)	15V	48mOhm @ 35A, 15V	2.69V @ 10mA	106 nC @ 15 V	±15V	2929 pF @ 800 V	-	374W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
G3R450MT17D SIC MOSFET N-CH 9A TO247-3 GeneSiC Semiconductor	0 In Stock Check Lead Time	1 : $7.21000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	9A (Tc)	15V	585mOhm @ 4A, 15V	2.7V @ 2mA	18 nC @ 15 V	±15V	454 pF @ 1000 V	-	88W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
G3R160MT17J SIC MOSFET N-CH 22A TO263-7 GeneSiC Semiconductor	1 In Stock	1 : $12.98000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	22A (Tc)	15V	208mOhm @ 12A, 15V	2.7V @ 5mA	51 nC @ 15 V	±15V	1272 pF @ 1000 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
G3R40MT12D SIC MOSFET N-CH 71A TO247-3 GeneSiC Semiconductor	0 In Stock Check Lead Time	1 : $17.42000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	71A (Tc)	15V	48mOhm @ 35A, 15V	2.69V @ 10mA	106 nC @ 15 V	±15V	2929 pF @ 800 V	-	333W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
G3R40MT12K SIC MOSFET N-CH 71A TO247-4 GeneSiC Semiconductor	0 In Stock Check Lead Time	1 : $17.67000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	71A (Tc)	15V	48mOhm @ 35A, 15V	2.69V @ 10mA	106 nC @ 15 V	±15V	2929 pF @ 800 V	-	333W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
G3R45MT17D SIC MOSFET N-CH 61A TO247-3 GeneSiC Semiconductor	0 In Stock Check Lead Time	1 : $32.73000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	61A (Tc)	15V	58mOhm @ 40A, 15V	2.7V @ 8mA	182 nC @ 15 V	±15V	4523 pF @ 1000 V	-	438W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
G3R20MT12K SIC MOSFET N-CH 128A TO247-4 GeneSiC Semiconductor	0 In Stock Check Lead Time	1 : $36.09000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	128A (Tc)	15V	24mOhm @ 60A, 15V	2.69V @ 15mA	219 nC @ 15 V	±15V	5873 pF @ 800 V	-	542W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
G3R20MT12N SIC MOSFET N-CH 105A SOT227 GeneSiC Semiconductor	0 In Stock Check Lead Time	1 : $56.20000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	105A (Tc)	15V	24mOhm @ 60A, 15V	2.69V @ 15mA	219 nC @ 15 V	+20V, -10V	5873 pF @ 800 V	-	365W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
G3R160MT12D SIC MOSFET N-CH 22A TO247-3 GeneSiC Semiconductor	0 In Stock Check Lead Time	1 : $6.52000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	22A (Tc)	15V	192mOhm @ 10A, 15V	2.69V @ 5mA	28 nC @ 15 V	±15V	730 pF @ 800 V	-	123W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

Single FETs, MOSFETs

Single FETs, MOSFETs

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