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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
D2PAK-7
C3M0280090J-TR
SICFET N-CH 900V 11A D2PAK-7
Wolfspeed, Inc.
3,229
In Stock
1 : $6.52000
Cut Tape (CT)
800 : $4.24700
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelSiCFET (Silicon Carbide)900 V11A (Tc)15V360mOhm @ 7.5A, 15V3.5V @ 1.2mA9.5 nC @ 15 V+18V, -8V150 pF @ 600 V-50W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
TO-247-3
C3M0280090D
SICFET N-CH 900V 11.5A TO247-3
Wolfspeed, Inc.
3,657
In Stock
1 : $6.19000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)900 V11.5A (Tc)15V360mOhm @ 7.5A, 15V3.5V @ 1.2mA9.5 nC @ 15 V+18V, -8V150 pF @ 600 V-54W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
D2PAK-7
C3M0280090J
SICFET N-CH 900V 11A D2PAK-7
Wolfspeed, Inc.
5,596
In Stock
1 : $6.52000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)900 V11A (Tc)15V360mOhm @ 7.5A, 15V3.5V @ 1.2mA9.5 nC @ 15 V+18V, -8V150 pF @ 600 V-50W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
C3D16065D1
C3M0350120D
SICFET N-CH 1200V 7.6A TO247-3
Wolfspeed, Inc.
4,327
In Stock
1 : $6.66000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V7.6A (Tc)15V455mOhm @ 3.6A, 15V3.6V @ 1mA19 nC @ 15 V+15V, -4V345 pF @ 1000 V-50W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
C3D16065D1
C3M0160120D
SICFET N-CH 1200V 17A TO247-3
Wolfspeed, Inc.
4,416
In Stock
1 : $10.00000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V17A (Tc)15V208mOhm @ 8.5A, 15V3.6V @ 2.33mA38 nC @ 15 V+15V, -4V632 pF @ 1000 V-97W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
D2PAK-7
C3M0120090J
SICFET N-CH 900V 22A D2PAK-7
Wolfspeed, Inc.
7,337
In Stock
1 : $11.80000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)900 V22A (Tc)15V155mOhm @ 15A, 15V3.5V @ 3mA17.3 nC @ 15 V+18V, -8V350 pF @ 600 V-83W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
C3M0120100K
C3M0120100K
SICFET N-CH 1000V 22A TO247-4L
Wolfspeed, Inc.
2,956
In Stock
1 : $13.78000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1000 V22A (Tc)15V155mOhm @ 15A, 15V3.5V @ 3mA21.5 nC @ 15 V±15V350 pF @ 600 V-83W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-4LTO-247-4
C3M_J
C3M0060065J
SICFET N-CH 650V 36A TO263-7
Wolfspeed, Inc.
3,658
In Stock
1 : $14.91000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V36A (Tc)15V79mOhm @ 13.2A, 15V3.6V @ 5mA46 nC @ 15 V+15V, -4V1020 pF @ 600 V-136W (Tc)-40°C ~ 175°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
C3M_D
C3M0060065D
SICFET N-CH 650V 37A TO247-3
Wolfspeed, Inc.
997
In Stock
1 : $14.91000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V37A (Tc)15V79mOhm @ 13.2A, 15V3.6V @ 5mA46 nC @ 15 V+15V, -4V1020 pF @ 600 V-150W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
D2PAK-7
C3M0065090J
SICFET N-CH 900V 35A D2PAK-7
Wolfspeed, Inc.
2,609
In Stock
1 : $16.28000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)900 V35A (Tc)15V78mOhm @ 20A, 15V2.1V @ 5mA30 nC @ 15 V+19V, -8V660 pF @ 600 V-113W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
C3M0075120J
C3M0075120J
SICFET N-CH 1200V 30A D2PAK-7
Wolfspeed, Inc.
1,145
In Stock
1 : $17.72000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V30A (Tc)15V90mOhm @ 20A, 15V4V @ 5mA51 nC @ 15 V+19V, -8V1350 pF @ 1000 V-113.6W (Tc)-55°C ~ 150°C (TJ)Surface MountD2PAK-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
D2PAK-7
C3M0065100J
SICFET N-CH 1000V 35A D2PAK-7
Wolfspeed, Inc.
2,646
In Stock
1 : $19.15000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1000 V35A (Tc)15V78mOhm @ 20A, 15V3.5V @ 5mA35 nC @ 15 V+15V, -4V660 pF @ 600 V-113.5W (Tc)-55°C ~ 150°C (TJ)Surface MountD2PAK-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
C3M0065100K
C3M0065100K
SICFET N-CH 1000V 35A TO247-4L
Wolfspeed, Inc.
2,499
In Stock
1 : $19.15000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1000 V35A (Tc)15V78mOhm @ 20A, 15V3.5V @ 5mA35 nC @ 15 V+19V, -8V660 pF @ 600 V-113.5W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-4LTO-247-4
C3M0040120J1-TR
C3M0040120J1
1200V 40 M SIC MOSFET
Wolfspeed, Inc.
801
In Stock
1 : $24.32000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V64A (Tc)15V53.5mOhm @ 33.3A, 15V3.6V @ 9.2mA94 nC @ 15 V+15V, -4V2900 pF @ 1000 V-272W (Tc)-40°C ~ 150°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
C3D16065D1
C3M0040120D
1200V 40MOHM SIC MOSFET
Wolfspeed, Inc.
0
In Stock
1 : $24.32000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V66A (Tc)15V53.5mOhm @ 33.3A, 15V3.6V @ 9.5mA101 nC @ 15 V+15V, -4V2900 pF @ 1000 V-326W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
C3M_K
C3M0025065K
GEN 3 650V 25 M SIC MOSFET
Wolfspeed, Inc.
198
In Stock
1 : $27.87000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V97A (Tc)15V34mOhm @ 33.5A, 15V3.6V @ 9.22mA112 nC @ 15 V+19V, -8V2980 pF @ 600 V-326W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
C3M_D
C3M0025065D
GEN 3 650V 25 M SIC MOSFET
Wolfspeed, Inc.
372
In Stock
1 : $27.87000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V97A (Tc)15V34mOhm @ 33.5A, 15V3.6V @ 9.22mA108 nC @ 15 V+19V, -8V2980 pF @ 600 V-326W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
TO-247-4
C3M0021120K
SICFET N-CH 1200V 100A TO247-4L
Wolfspeed, Inc.
4,594
In Stock
1 : $36.93000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V100A (Tc)15V28.8mOhm @ 50A, 15V3.6V @ 17.7mA162 nC @ 15 V+15V, -4V4818 pF @ 1000 V-469W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
C3D16065D1
C3M0021120D
SICFET N-CH 1200V 100A TO247-3
Wolfspeed, Inc.
2,783
In Stock
1 : $36.93000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V100A (Tc)15V28.8mOhm @ 50A, 15V3.6V @ 17.7mA160 nC @ 15 V+15V, -4V4818 pF @ 1000 V-469W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
TO-247-4
C3M0030090K
SICFET N-CH 900V 73A TO247-4
Wolfspeed, Inc.
4,858
In Stock
1 : $39.38000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)900 V73A (Tc)15V39mOhm @ 35A, 15V3.5V @ 11mA74 nC @ 15 V+15V, -4V1503 pF @ 600 V-240W (Tc)-40°C ~ 150°C (TJ)Through HoleTO-247-4LTO-247-4
C3M_D
C3M0015065D
SICFET N-CH 650V 120A TO247-3
Wolfspeed, Inc.
1,428
In Stock
1 : $45.82000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V120A (Tc)15V21mOhm @ 55.8A, 15V3.6V @ 15.5mA188 nC @ 15 V+15V, -4V5011 pF @ 400 V-416W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
C3D16065D1
C3M0016120D
SICFET N-CH 1200V 115A TO247-3
Wolfspeed, Inc.
1,741
In Stock
1 : $82.06000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V115A (Tc)15V22.3mOhm @ 75A, 15V3.6V @ 23mA207 nC @ 15 V+15V, -4V6085 pF @ 1000 V-556W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
TO-247-4
C3M0016120K
SICFET N-CH 1.2KV 115A TO247-4
Wolfspeed, Inc.
170
In Stock
1 : $82.06000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V115A (Tc)15V22.3mOhm @ 75A, 15V3.6V @ 23mA211 nC @ 15 V+15V, -4V6085 pF @ 1000 V-556W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
C3M_D
C3M0120065D
650V 120M SIC MOSFET
Wolfspeed, Inc.
393
In Stock
1 : $8.47000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)650 V22A (Tc)15V157mOhm @ 6.76A, 15V3.6V @ 1.86mA28 nC @ 15 V+19V, -8V640 pF @ 400 V-98W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
C3M_J
C3M0160120J
SICFET N-CH 1200V 17A TO263-7
Wolfspeed, Inc.
3,950
In Stock
1 : $10.00000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V17A (Tc)15V208mOhm @ 8.5A, 15V3.6V @ 2.33mA24 nC @ 15 V+15V, -4V632 pF @ 1000 V-90W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Showing
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of 53

Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.