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Transistors - FETs, MOSFETs - Single
Results: 9
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Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
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Compare | Mfr Part # | Quantity Available | Price | Series | Package | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1,796 In Stock | 1 : $9.31000 Cut Tape (CT) 800 : $5.84251 Tape & Reel (TR) | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 40A (Tc) | 10V | 82mOhm @ 20A, 10V | 5V @ 4mA | 81 nC @ 10 V | ±30V | 3410 pF @ 400 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK-3 (TO-263-3) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |||
107 In Stock | 1 : $6.84000 Tube | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 110mOhm @ 15A, 10V | 5V @ 3mA | 58 nC @ 10 V | ±30V | 2560 pF @ 400 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | |||
430 In Stock | 1 : $20.83000 Tube 1 : $21.82000 Tube | Tube Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 27.4mOhm @ 35A, 10V | 5V @ 3mA | 227 nC @ 10 V | ±30V | 7780 pF @ 400 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | |||
640 In Stock 800 Factory | 1 : $8.64000 Cut Tape (CT) 800 : $5.62633 Tape & Reel (TR) | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 44A (Tc) | 10V | 72mOhm @ 24A, 10V | 4.5V @ 1mA | 82 nC @ 10 V | ±30V | 330 pF @ 400 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK-3 (TO-263-3) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |||
0 In Stock | 450 : $9.34420 Tube | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | - | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 160 nC @ 10 V | ±30V | 5665 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 | |||
75 In Stock | 1 : $15.09000 Tube | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 153 nC @ 10 V | ±30V | 5875 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | |||
7 In Stock | 1 : $4.37000 Cut Tape (CT) 800 : $2.73571 Tape & Reel (TR) | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 150mOhm @ 12A, 10V | 5V @ 540µA | 43 nC @ 10 V | ±30V | 1999 pF @ 400 V | - | 192W | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK-3 (TO-263-3) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |||
0 In Stock | 1 : $6.83000 Cut Tape (CT) 800 : $4.27613 Tape & Reel (TR) | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 110mOhm @ 15A, 10V | 5V @ 3mA | 58 nC @ 10 V | ±30V | 2560 pF @ 400 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK-3 (TO-263-3) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |||
0 In Stock 1,350 Marketplace | 58 : $5.18000 Bulk 1 : $9.68000 Tube | Bulk Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 40A (Tc) | 10V | 82mOhm @ 20A, 10V | 5V @ 4mA | 81 nC @ 10 V | ±30V | 3410 pF @ 400 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
