Showing
1 - 13
of 13
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
FDMS3622S
BSC026N02KSG
BSC026N02 - 12V-300V N-CHANNEL P
Infineon Technologies
27,190
Marketplace
393 : $0.76000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)20 V25A (Ta), 134A (Tc)2.5V, 4.5V2.6mOhm @ 50A, 4.5V1.2V @ 200µA52.7 nC @ 4.5 V±12V7800 pF @ 10 V-2.8W (Ta), 78W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TDSON-8-18-PowerTDFN
NX7002BKS115
BSD214SNL6327
SMALL SIGNAL N-CHANNEL MOSFET
Infineon Technologies
41,600
Marketplace
5,624 : $0.05000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)20 V1.5A (Ta)2.5V, 4.5V140mOhm @ 1.5A, 4.5V1.2V @ 3.7µA0.8 nC @ 5 V±12V143 pF @ 10 V-500mW (Ta)-55°C ~ 150°C (TJ)Surface MountPG-SOT363-6-66-VSSOP, SC-88, SOT-363
ISL9N302AS3
IPU06N03LZG
N-CHANNEL POWER MOSFET
Infineon Technologies
172,500
Marketplace
704 : $0.43000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)25 V50A (Tc)4.5V, 10V5.1mOhm @ 30A, 10V2V @ 40µA22 nC @ 5 V±20V2783 pF @ 15 V-83W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO251-3-21TO-251-3 Short Leads, IPak, TO-251AA
ISL9N302AS3
IPS12CN10LG
N-CHANNEL POWER MOSFET
Infineon Technologies
0
Marketplace
1 : $1.00000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)100 V69A (Tc)4.5V, 10V12mOhm @ 69A, 10V2.4V @ 83µA58 nC @ 10 V±20V5600 pF @ 50 V-125W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO251-3-11TO-251-3 Stub Leads, IPak
BAP70AM/A115
BSD816SN L6327
SMALL SIGNAL N-CHANNEL MOSFET
Infineon Technologies
0
Marketplace
1 : $1.00000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)20 V1.4A (Ta)1.8V, 2.5V160mOhm @ 1.4A, 2.5V950mV @ 3.7µA0.6 nC @ 2.5 V±8V180 pF @ 10 V-500mW (Ta)-55°C ~ 150°C (TJ)Surface MountPG-SOT363-6-66-VSSOP, SC-88, SOT-363
0
Marketplace
1 : $1.00000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)85 V100A (Tc)10V5.1mOhm @ 100A, 10V4V @ 250µA180 nC @ 10 V±20V12100 pF @ 40 V-300W (Tc)-55°C ~ 175°C (TJ)Surface MountPG-TO263-3-2TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NX7002BKS115
BSD816SNL6327
SMALL SIGNAL N-CHANNEL MOSFET
Infineon Technologies
0
Marketplace
1 : $1.00000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)20 V1.4A (Ta)1.8V, 2.5V160mOhm @ 1.4A, 2.5V950mV @ 3.7µA0.6 nC @ 2.5 V±8V180 pF @ 10 V-500mW (Ta)-55°C ~ 150°C (TJ)Surface MountPG-SOT363-6-66-VSSOP, SC-88, SOT-363
SI3443DV
BSL202SNL6327
SMALL SIGNAL N-CHANNEL MOSFET
Infineon Technologies
0
Marketplace
1 : $1.00000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)20 V7.5A (Ta)2.5V, 4.5V22mOhm @ 7.5A, 4.5V1.2V @ 30µA8.7 nC @ 4.5 V±12V1147 pF @ 10 V-2W (Ta)-55°C ~ 150°C (TJ)Surface MountPG-TSOP6-6-6SOT-23-6 Thin, TSOT-23-6
17,576
Marketplace
268 : $1.12000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)100 V9.4A (Ta), 63A (Tc)10V15.2mOhm @ 25A, 10V4V @ 72µA29 nC @ 10 V±20V1900 pF @ 50 V-114W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TDSON-88-PowerTDFN
IRG4RC10UTRPBF
IPB051NE8NG
N-CHANNEL POWER MOSFET
Infineon Technologies
775
Marketplace
198 : $1.52000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)85 V100A (Tc)10V5.1mOhm @ 100A, 10V4V @ 250µA180 nC @ 10 V±20V12100 pF @ 40 V-300W (Tc)-55°C ~ 175°C (TJ)Surface MountPG-TO263-3-2TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MC78M05BTG
IPP12CN10LG
POWER FIELD-EFFECT TRANSISTOR, 6
Infineon Technologies
1,380
Marketplace
512 : $0.59000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)100 V69A (Tc)4.5V, 10V12mOhm @ 69A, 10V2.4V @ 83µA58 nC @ 10 V±20V5600 pF @ 50 V-125W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3-1TO-220-3
MOSFET N-CH 100V 100A TO-220
IPP05CN10NGHKSA1
MOSFET N-CH 100V 100A TO-220
Infineon Technologies
0
In Stock
Active
Tube
Active---100A (Tc)------------
MOSFET N-CH 100V 69A TO220-3
IPP12CN10LGHKSA1
MOSFET N-CH 100V 69A TO220-3
Infineon Technologies
0
In Stock
Active
Tube
Active---69A (Tc)------------
Showing
1 - 13
of 13

Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.