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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
G2R1000MT17D
G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3
GeneSiC Semiconductor
8,173
In Stock
1 : $5.99000
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ActiveN-ChannelSiCFET (Silicon Carbide)1700 V4A (Tc)20V1.2Ohm @ 2A, 20V4V @ 2mA-+20V, -5V139 pF @ 1000 V-53W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
GA20JT12-263
G2R1000MT17J
SIC MOSFET N-CH 3A TO263-7
GeneSiC Semiconductor
16,988
In Stock
1 : $7.08000
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ActiveN-ChannelSiCFET (Silicon Carbide)1700 V3A (Tc)20V1.2Ohm @ 2A, 20V4V @ 2mA-+20V, -10V139 pF @ 1000 V-54W (Tc)-55°C ~ 175°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
GA20JT12-263
G2R120MT33J
SIC MOSFET N-CH TO263-7
GeneSiC Semiconductor
152
In Stock
1 : $118.84000
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ActiveN-ChannelSiCFET (Silicon Carbide)3300 V35A20V156mOhm @ 20A, 20V-145 nC @ 20 V+25V, -10V3706 pF @ 1000 V---55°C ~ 175°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
G2R50MT33K
G2R50MT33K
3300V 50M TO-247-4 SIC MOSFET
GeneSiC Semiconductor
0
In Stock
1 : $325.24000
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ActiveN-ChannelSiCFET (Silicon Carbide)3300 V63A (Tc)20V50mOhm @ 40A, 20V3.5V @ 10mA (Typ)340 nC @ 20 V+25V, -10V7301 pF @ 1000 VStandard536W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
GA20JT12-263
G2R1000MT33J
SIC MOSFET N-CH 4A TO263-7
GeneSiC Semiconductor
0
In Stock
1 : $20.56000
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ActiveN-ChannelSiCFET (Silicon Carbide)3300 V4A (Tc)20V1.2Ohm @ 2A, 20V3.5V @ 2mA21 nC @ 20 V+20V, -5V238 pF @ 1000 V-74W (Tc)-55°C ~ 175°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.