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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
1,749
Marketplace
278 : $1.08000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)80 V120A (Tc)10V4mOhm @ 25A, 10V4V @ 1mA169 nC @ 10 V±20V12030 pF @ 25 V-349W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
FGPF70N30
SFS9640
POWER FIELD-EFFECT TRANSISTOR
Fairchild Semiconductor
1,236
Marketplace
642 : $0.47000
Bulk
-
Bulk
ActiveP-ChannelMOSFET (Metal Oxide)200 V6.2A (Tc)10V500mOhm @ 3.1A, 10V4V @ 250µA59 nC @ 10 V±30V1585 pF @ 25 V-40W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220FTO-220-3 Full Pack
5,107
Marketplace
59 : $5.12000
Bulk
-
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)600 V16A (Ta)10V575mOhm @ 8A, 10V-45 nC @ 10 V±30V1800 pF @ 25 V-35W (Tc)150°C (TJ)Through HoleTO-220FPTO-220-3 Full Pack
NGTB25N120FL2WAG
FCH041N65EFL4
POWER FIELD-EFFECT TRANSISTOR, N
Fairchild Semiconductor
232
Marketplace
41 : $7.45000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)650 V76A (Tc)10V41mOhm @ 38A, 10V5V @ 7.6mA298 nC @ 10 V±20V12560 pF @ 100 V-595W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247TO-247-4
ISL9N302AS3
PSMN7R8-120ESQ
POWER FIELD-EFFECT TRANSISTOR, 7
NXP USA Inc.
430
Marketplace
301 : $1.00000
Bulk
-
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)120 V70A (Tc)10V7.9mOhm @ 25A, 10V4V @ 1mA167 nC @ 10 V±20V9473 pF @ 60 V-349W (Tc)-55°C ~ 175°C (TJ)Through HoleI2PAKTO-262-3 Long Leads, I²Pak, TO-262AA
BTA330Y-800BT127
FDP8442-F085
POWER FIELD-EFFECT TRANSISTOR, 2
Fairchild Semiconductor
750
Marketplace
237 : $1.27000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)40 V23A (Ta), 80A (Tc)10V3.1mOhm @ 80A, 10V4V @ 250µA235 nC @ 10 V±20V12200 pF @ 25 V-254W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220-3TO-220-3
MC78M05BTG
FDP39N20
POWER FIELD-EFFECT TRANSISTOR, 3
Fairchild Semiconductor
500
Marketplace
205 : $1.47000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)200 V39A (Tc)10V66mOhm @ 19.5A, 10V5V @ 250µA49 nC @ 10 V±30V2130 pF @ 25 V-251W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220-3
POWER FIELD-EFFECT TRANSISTOR, N
FCP125N60E
POWER FIELD-EFFECT TRANSISTOR, N
Fairchild Semiconductor
302
Marketplace
154 : $1.96000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)600 V29A (Tc)10V125mOhm @ 14.5A, 10V3.5V @ 250µA95 nC @ 10 V±20V2990 pF @ 380 V-278W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220-3
ISL9N302AS3
PSMN8R5-100ESQ
POWER FIELD-EFFECT TRANSISTOR, 1
NXP USA Inc.
975
Marketplace
526 : $0.57000
Bulk
-
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)100 V100A (Tj)10V8.5mOhm @ 25A, 10V4V @ 1mA111 nC @ 10 V±20V5512 pF @ 50 V-263W (Tc)-55°C ~ 175°C (TJ)Through HoleI2PAKTO-262-3 Long Leads, I²Pak, TO-262AA
BTA330Y-800BT127
FDPF5N50NZF
POWER FIELD-EFFECT TRANSISTOR, 4
onsemi
8,000
Marketplace
381 : $0.79000
Bulk
Bulk
Tube
ActiveN-ChannelMOSFET (Metal Oxide)500 V4.2A (Tc)10V1.75Ohm @ 2.1A, 10V5V @ 250µA12 nC @ 10 V±25V485 pF @ 25 V-30W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220F-3TO-220-3 Full Pack
SGP15N60XKSA1
FDP6030BL
POWER FIELD-EFFECT TRANSISTOR, 4
Fairchild Semiconductor
7,865
Marketplace
516 : $0.58000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)30 V40A (Tc)4.5V, 10V18mOhm @ 20A, 10V3V @ 250µA17 nC @ 5 V±20V1160 pF @ 15 V-60W (Tc)-65°C ~ 175°C (TJ)Through HoleTO-220-3TO-220-3
IRG4IBC30UDPBF
FCPF600N60Z
POWER FIELD-EFFECT TRANSISTOR, N
onsemi
51,200
Marketplace
404 : $0.74000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)600 V7.4A (Tc)10V600mOhm @ 3.7A, 10V3.5V @ 250µA26 nC @ 10 V±20V1120 pF @ 25 V-89W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220F-3TO-220-3 Full Pack
RURG5060
FCH077N65F-F085
POWER FIELD-EFFECT TRANSISTOR, N
onsemi
20,242
Marketplace
47 : $6.43000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)650 V54A (Tc)10V77mOhm @ 27A, 10V5V @ 250µA164 nC @ 10 V±20V7162 pF @ 25 V-481W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
MC78M05BTG
FDPF770N15A
POWER FIELD-EFFECT TRANSISTOR, 1
Fairchild Semiconductor
1,500
Marketplace
454 : $0.66000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)150 V10A (Tc)10V77mOhm @ 10A, 10V4V @ 250µA11.2 nC @ 10 V±20V765 pF @ 75 V-21W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220F-3TO-220-3 Full Pack
MC78M05BTG
FDP8440
POWER FIELD-EFFECT TRANSISTOR, 1
Fairchild Semiconductor
18,984
Marketplace
130 : $2.32000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)40 V100A (Tc)4.5V, 10V2.2mOhm @ 80A, 10V3V @ 250µA450 nC @ 10 V±20V24740 pF @ 25 V-306W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220-3TO-220-3
SGP15N60XKSA1
FQPF8N90C
POWER FIELD-EFFECT TRANSISTOR, 6
Fairchild Semiconductor
5,346
Marketplace
256 : $1.17000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)900 V6.3A (Tc)10V1.9Ohm @ 3.15A, 10V5V @ 250µA45 nC @ 10 V±30V2080 pF @ 25 V-60W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220FTO-220-3 Full Pack
MC78M05BTG
IRF530A
POWER FIELD-EFFECT TRANSISTOR, 1
Fairchild Semiconductor
1,966
Marketplace
516 : $0.58000
Bulk
-
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)100 V14A (Tc)10V110mOhm @ 7A, 10V4V @ 250µA36 nC @ 10 V-790 pF @ 25 V-55W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220-3TO-220-3
BTA330Y-800BT127
FQPF11N40C
POWER FIELD-EFFECT TRANSISTOR, 1
onsemi
608
Marketplace
456 : $0.66000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)400 V10.5A (Tc)10V530mOhm @ 5.25A, 10V4V @ 250µA35 nC @ 10 V±30V1090 pF @ 25 V-44W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220F-3TO-220-3 Full Pack
IRG4IBC30WPBF-INF
FQPF33N10L
POWER FIELD-EFFECT TRANSISTOR, 1
Fairchild Semiconductor
18,330
Marketplace
426 : $0.71000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)100 V18A (Tc)5V, 10V52mOhm @ 9A, 10V2V @ 250µA40 nC @ 5 V±20V1630 pF @ 25 V-41W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220F-3TO-220-3 Full Pack
2SK4221
FQA9N90-F109
POWER FIELD-EFFECT TRANSISTOR, 8
Fairchild Semiconductor
398
Marketplace
127 : $2.37000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)900 V8.6A (Tc)10V1.3Ohm @ 4.3A, 10V5V @ 250µA72 nC @ 10 V±30V2700 pF @ 25 V-240W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-3PNTO-3P-3, SC-65-3
AUIRFSL6535
FQI8N60CTU
POWER FIELD-EFFECT TRANSISTOR, 7
Fairchild Semiconductor
6,000
Marketplace
275 : $1.09000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)600 V7.5A (Tc)10V1.2Ohm @ 3.75A, 10V4V @ 250µA36 nC @ 10 V±30V1255 pF @ 25 V-3.13W (Ta), 147W (Tc)-55°C ~ 150°C (TJ)Through HoleI2PAK (TO-262)TO-262-3 Long Leads, I²Pak, TO-262AA
BTA330Y-800BT127
FCPF1300N80ZYD
POWER FIELD-EFFECT TRANSISTOR, N
onsemi
800
Marketplace
303 : $0.99000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)800 V4A (Tc)10V1.3Ohm @ 2A, 10V4.5V @ 400µA21 nC @ 10 V±20V880 pF @ 100 V-24W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220F-3 (Y-Forming)TO-220-3 Full Pack, Formed Leads
ISL9N302AS3
FQU3N50CTU
POWER FIELD-EFFECT TRANSISTOR, 2
Fairchild Semiconductor
1,320
Marketplace
720 : $0.42000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)500 V2.5A (Tc)10V2.5Ohm @ 1.25A, 10V4V @ 250µA13 nC @ 10 V±30V365 pF @ 25 V-35W (Tc)-55°C ~ 150°C (TJ)Through HoleI-PAKTO-251-3 Short Leads, IPak, TO-251AA
MC78M05BTG
FQP4N80
POWER FIELD-EFFECT TRANSISTOR, 3
Fairchild Semiconductor
5,225
Marketplace
331 : $0.91000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)800 V3.9A (Tc)10V3.6Ohm @ 1.95A, 10V5V @ 250µA25 nC @ 10 V±30V880 pF @ 25 V-130W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220-3
ISL9N302AS3
FQI4N90TU
POWER FIELD-EFFECT TRANSISTOR, 4
Fairchild Semiconductor
1,502
Marketplace
275 : $1.09000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)900 V4.2A (Tc)10V3.3Ohm @ 2.1A, 10V5V @ 250µA30 nC @ 10 V±30V1100 pF @ 25 V-3.13W (Ta), 140W (Tc)-55°C ~ 150°C (TJ)Through HoleI2PAK (TO-262)TO-262-3 Long Leads, I²Pak, TO-262AA
Showing
of 13,203

Through Hole Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.