Single FETs, MOSFETs

Results: 12,576
Manufacturer
Alpha & Omega Semiconductor Inc.ANBON SEMICONDUCTOR (INT'L) LIMITEDCentral Semiconductor CorpComchip TechnologyCoolCADDiodes IncorporatedDiotec SemiconductorFairchild SemiconductorGeneSiC SemiconductorGoford SemiconductorGood-Ark SemiconductorHarris Corporation
Series
-*AlphaMOSAlphaSGT2™AlphaSGT™aMOS5™aMOS™Automotive, AEC-Q101Automotive, AEC-Q101, UltraFET™C2M™C3M™Cool MOS™
Packaging
BagBoxBulkCut Tape (CT)Digi-Reel®StripTape & Box (TB)Tape & Reel (TR)TrayTube
Product Status
ActiveDiscontinued at Digi-KeyLast Time BuyNot For New DesignsObsolete
FET Type
-N-ChannelP-Channel
Technology
-GaNFET (Cascode Gallium Nitride FET)GaNFET (Gallium Nitride)MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)SiCFET (Cascode SiCJFET)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
10 V12 V16 V16.5 V20 V24 V25 V28 V30 V33 V34 V35 V
Current - Continuous Drain (Id) @ 25°C
10mA (Ta)30mA (Tj)30mA45mA (Ta)50mA (Ta)50mA (Tj)50mA54mA (Tj)60mA70mA (Ta)86mA (Tj)90mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
0V0V, 10V1.5V, 4V1.8V, 4.5V2V, 2.8V2V, 5V2.4V, 10V2.5V, 10V2.5V, 4.5V2.5V, 4V2.6V, 10V2.6V, 5V
Rds On (Max) @ Id, Vgs
1.15mOhm @ 100A, 10V1.25mOhm @ 100A, 10V1.28mOhm @ 100A, 10V1.3mOhm @ 100A, 10V1.3mOhm @ 195A, 10V1.3mOhm @ 25A, 10V1.4mOhm @ 100A, 10V1.4mOhm @ 25A, 10V1.47mOhm @ 90A, 10V1.5mOhm @ 100A, 10V1.5mOhm @ 195A, 10V1.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
450mV @ 2mA (Min)700mV @ 250µA (Min)900mV @ 250µA1V @ 1mA1V @ 250µA (Min)1V @ 250µA1.2V @ 250µA1.3V @ 100µA1.4V @ 1mA1.5V @ 1mA1.5V @ 1µA1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.4 nC @ 4.5 V1 nC @ 5 V1.1 nC @ 10 V1.4 nC @ 10 V1.43 nC @ 10 V1.5 nC @ 10 V1.57 nC @ 10 V1.8 nC @ 5 V2 nC @ 10 V2 nC @ 5 V2.63 nC @ 10 V3 nC @ 10 V
Vgs (Max)
-10V, +20V-8V, +19V-6.5V+5V, -16V±8V+10V, -20V+10V, -5V+10V, -8V10V±10V±12V+15V, -300mV
Input Capacitance (Ciss) (Max) @ Vds
3.5 pF @ 15 V6.5 pF @ 25 V6.6 pF @ 10 V7.4 pF @ 10 V10 pF @ 10 V10 pF @ 25 V15 pF @ 10 V25 pF @ 25 V35 pF @ 18 V40 pF @ 10 V40 pF @ 25 V43 pF @ 25 V
FET Feature
-Current SensingDepletion ModeLogic Level Gate, 4V DriveStandardTemperature Sensing Diode
Power Dissipation (Max)
160mW200mW (Ta)250mW (Ta)250mW (Tc)300mW (Ta)300mW (Tc)350mW (Ta)350mW (Tc)360mW (Tc)375mW (Ta)375mW400mW (Ta)
Operating Temperature
-65°C ~ 150°C (TJ)-65°C ~ 175°C (TJ)-60°C ~ 175°C (TJ)-55°C ~ 125°C (TJ)-55°C ~ 135°C (TJ)-55°C ~ 150°C (TA)-55°C ~ 150°C (TJ)-55°C ~ 150°C-55°C ~ 155°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C-55°C ~ 200°C (TJ)
Grade
-AutomotiveMilitary
Qualification
-AEC-Q100AEC-Q101MIL-PRF-19500/542MIL-PRF-19500/543MIL-PRF-19500/555MIL-PRF-19500/556MIL-PRF-19500/562MIL-PRF-19500/564MIL-PRF-19500/570MIL-PRF-19500/592MIL-PRF-19500/595MIL-PRF-19500/603MIL-PRF-19500/614
Supplier Device Package
3-SPA4-DIP, Hexdip4-DIP, Hexdip, HVMDIP4-HVMDIP4-Power Tab8-CDIP-EP264 MAX™ [L2]-AxialDO-35DPAK(L)-(2)DPAK3 (IPAK)
Package / Case
3-SIP4-DIP (0.300", 7.62mm)4-SIP8-CDIP Exposed Pad-AxialDO-204AH, DO-35, AxialE-Line-3E-Line-3, Formed LeadsISOPLUS220™ISOPLUSi5-PAK™ISOWATT-218-3
Stocking Options
Environmental Options
Media
Marketplace Product
12,576Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-92-3(StandardBody),TO-226_straightlead
2N7000
MOSFET TO92 N 60V 0.2A 5OHM 150C
onsemi
21,909
In Stock
1 : $0.49000
Bulk
-
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)60 V200mA (Ta)4.5V, 10V5Ohm @ 500mA, 10V3V @ 1mA-±20V50 pF @ 25 V-400mW (Ta)-55°C ~ 150°C (TJ)--Through HoleTO-92-3TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
LND150N3-G
MOSFET N-CH 500V 30MA TO92-3
Microchip Technology
4,938
In Stock
1 : $0.60000
Bag
-
Bag
ActiveN-ChannelMOSFET (Metal Oxide)500 V30mA (Tj)0V1000Ohm @ 500µA, 0V--±20V10 pF @ 25 VDepletion Mode740mW (Ta)-55°C ~ 150°C (TJ)--Through HoleTO-92-3TO-226-3, TO-92-3 (TO-226AA)
TO-220AB PKG
IRF530NPBF
MOSFET N-CH 100V 17A TO220AB
Infineon Technologies
53,050
In Stock
1 : $0.91000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V17A (Tc)10V90mOhm @ 9A, 10V4V @ 250µA37 nC @ 10 V±20V920 pF @ 25 V-70W (Tc)-55°C ~ 175°C (TJ)--Through HoleTO-220ABTO-220-3
TO-220AB PKG
IRF9530NPBF
MOSFET P-CH 100V 14A TO220AB
Infineon Technologies
39,278
In Stock
1 : $0.93000
Tube
Tube
ActiveP-ChannelMOSFET (Metal Oxide)100 V14A (Tc)10V200mOhm @ 8.4A, 10V4V @ 250µA58 nC @ 10 V±20V760 pF @ 25 V-79W (Tc)-55°C ~ 175°C (TJ)--Through HoleTO-220ABTO-220-3
TO-220AB PKG
IRLZ24NPBF
MOSFET N-CH 55V 18A TO220AB
Infineon Technologies
4,353
In Stock
1 : $0.95000
Tube
Tube
Not For New DesignsN-ChannelMOSFET (Metal Oxide)55 V18A (Tc)4V, 10V60mOhm @ 11A, 10V2V @ 250µA15 nC @ 5 V±16V480 pF @ 25 V-45W (Tc)-55°C ~ 175°C (TJ)--Through HoleTO-220ABTO-220-3
TO-220AB PKG
IRFB7545PBF
MOSFET N-CH 60V 95A TO220
Infineon Technologies
50,853
In Stock
1 : $0.96000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)60 V95A (Tc)6V, 10V5.9mOhm @ 57A, 10V3.7V @ 100µA110 nC @ 10 V±20V4010 pF @ 25 V-125W (Tc)-55°C ~ 175°C (TJ)--Through HoleTO-220TO-220-3
TO-220AB PKG
IRLB8721PBF
MOSFET N-CH 30V 62A TO220AB
Infineon Technologies
18,503
In Stock
1 : $1.05000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)30 V62A (Tc)4.5V, 10V8.7mOhm @ 31A, 10V2.35V @ 25µA13 nC @ 4.5 V±20V1077 pF @ 15 V-65W (Tc)-55°C ~ 175°C (TJ)--Through HoleTO-220ABTO-220-3
TO-220AB PKG
IRF640NPBF
MOSFET N-CH 200V 18A TO220AB
Infineon Technologies
63,298
In Stock
1 : $1.17000
Tube
Tube
Not For New DesignsN-ChannelMOSFET (Metal Oxide)200 V18A (Tc)10V150mOhm @ 11A, 10V4V @ 250µA67 nC @ 10 V±20V1160 pF @ 25 V-150W (Tc)-55°C ~ 175°C (TJ)--Through HoleTO-220ABTO-220-3
TO-220AB PKG
IRLZ44NPBF
MOSFET N-CH 55V 47A TO220AB
Infineon Technologies
2,421
In Stock
1 : $1.28000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)55 V47A (Tc)4V, 10V22mOhm @ 25A, 10V2V @ 250µA48 nC @ 5 V±16V1700 pF @ 25 V-3.8W (Ta), 110W (Tc)-55°C ~ 175°C (TJ)--Through HoleTO-220ABTO-220-3
TO-220AB PKG
IRF540NPBF
MOSFET N-CH 100V 33A TO220AB
Infineon Technologies
147,351
In Stock
1 : $1.33000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V33A (Tc)10V44mOhm @ 16A, 10V4V @ 250µA71 nC @ 10 V±20V1960 pF @ 25 V-130W (Tc)-55°C ~ 175°C (TJ)--Through HoleTO-220ABTO-220-3
TO-220AB
IRF530PBF
MOSFET N-CH 100V 14A TO220AB
Vishay Siliconix
8,898
In Stock
1 : $1.35000
Tube
-
Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V14A (Tc)10V160mOhm @ 8.4A, 10V4V @ 250µA26 nC @ 10 V±20V670 pF @ 25 V-88W (Tc)-55°C ~ 175°C (TJ)--Through HoleTO-220ABTO-220-3
TO-220AB PKG
IRL540NPBF
MOSFET N-CH 100V 36A TO220AB
Infineon Technologies
17,930
In Stock
1 : $1.37000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V36A (Tc)4V, 10V44mOhm @ 18A, 10V2V @ 250µA74 nC @ 5 V±16V1800 pF @ 25 V-140W (Tc)-55°C ~ 175°C (TJ)--Through HoleTO-220ABTO-220-3
IRF9540NPBF
IRF9540NPBF
MOSFET P-CH 100V 23A TO220AB
Infineon Technologies
9,432
In Stock
1 : $1.39000
Tube
Tube
ActiveP-ChannelMOSFET (Metal Oxide)100 V23A (Tc)10V117mOhm @ 11A, 10V4V @ 250µA97 nC @ 10 V±20V1300 pF @ 25 V-140W (Tc)-55°C ~ 150°C (TJ)--Through HoleTO-220ABTO-220-3
4-DIP
IRLD014PBF
MOSFET N-CH 60V 1.7A 4DIP
Vishay Siliconix
6,986
In Stock
1 : $1.50000
Tube
-
Tube
ActiveN-ChannelMOSFET (Metal Oxide)60 V1.7A (Ta)4V, 5V200mOhm @ 1A, 5V2V @ 250µA8.4 nC @ 5 V±10V400 pF @ 25 V-1.3W (Ta)-55°C ~ 175°C (TJ)--Through Hole4-HVMDIP4-DIP (0.300", 7.62mm)
TO-220AB PKG
IRF1010NPBF
MOSFET N-CH 55V 85A TO220AB
Infineon Technologies
5,624
In Stock
1 : $1.50000
Tube
Tube
Not For New DesignsN-ChannelMOSFET (Metal Oxide)55 V85A (Tc)10V11mOhm @ 43A, 10V4V @ 250µA120 nC @ 10 V±20V3210 pF @ 25 V-180W (Tc)-55°C ~ 175°C (TJ)--Through HoleTO-220ABTO-220-3
4-DIP
IRFD9120PBF
MOSFET P-CH 100V 1A 4DIP
Vishay Siliconix
53,591
In Stock
1 : $1.51000
Tube
-
Tube
ActiveP-ChannelMOSFET (Metal Oxide)100 V1A (Ta)10V600mOhm @ 600mA, 10V4V @ 250µA18 nC @ 10 V±20V390 pF @ 25 V-1.3W (Ta)-55°C ~ 175°C (TJ)--Through Hole4-HVMDIP4-DIP (0.300", 7.62mm)
TO-220-3
STP3NK60Z
MOSFET N-CH 600V 2.4A TO220AB
STMicroelectronics
5,888
In Stock
1 : $1.51000
Tube
Tube
Not For New DesignsN-ChannelMOSFET (Metal Oxide)600 V2.4A (Tc)10V3.6Ohm @ 1.2A, 10V4.5V @ 50µA11.8 nC @ 10 V±30V311 pF @ 25 V-45W (Tc)-55°C ~ 150°C (TJ)--Through HoleTO-220TO-220-3
TO-220AB PKG
IRF3205PBF
MOSFET N-CH 55V 110A TO220AB
Infineon Technologies
24,263
In Stock
1 : $1.60000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)55 V110A (Tc)10V8mOhm @ 62A, 10V4V @ 250µA146 nC @ 10 V±20V3247 pF @ 25 V-200W (Tc)-55°C ~ 175°C (TJ)--Through HoleTO-220ABTO-220-3
4-DIP
IRFD9020PBF
MOSFET P-CH 60V 1.6A 4DIP
Vishay Siliconix
4,825
In Stock
1 : $1.61000
Tube
-
Tube
ActiveP-ChannelMOSFET (Metal Oxide)60 V1.6A (Ta)10V280mOhm @ 960mA, 10V4V @ 1µA19 nC @ 10 V±20V570 pF @ 25 V-1.3W (Ta)-55°C ~ 175°C (TJ)--Through Hole4-HVMDIP4-DIP (0.300", 7.62mm)
4-DIP
IRFD110PBF
MOSFET N-CH 100V 1A 4DIP
Vishay Siliconix
21,578
In Stock
1 : $1.62000
Tube
-
Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V1A (Ta)10V540mOhm @ 600mA, 10V4V @ 250µA8.3 nC @ 10 V±20V180 pF @ 25 V-1.3W (Ta)-55°C ~ 175°C (TJ)--Through Hole4-HVMDIP4-DIP (0.300", 7.62mm)
TO-220AB PKG
IRF3710PBF
MOSFET N-CH 100V 57A TO220AB
Infineon Technologies
7,313
In Stock
1 : $1.63000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V57A (Tc)10V23mOhm @ 28A, 10V4V @ 250µA130 nC @ 10 V±20V3130 pF @ 25 V-200W (Tc)-55°C ~ 175°C (TJ)--Through HoleTO-220ABTO-220-3
TO-92-3(StandardBody),TO-226_straightlead
TN0620N3-G-P002
MOSFET N-CH 200V 250MA TO92-3
Microchip Technology
6,375
In Stock
1 : $1.73000
Cut Tape (CT)
2,000 : $1.32000
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
ActiveN-ChannelMOSFET (Metal Oxide)200 V250mA (Tj)5V, 10V6Ohm @ 500mA, 10V1.6V @ 1mA-±20V150 pF @ 25 V-1W (Tc)-55°C ~ 150°C (TJ)--Through HoleTO-92-3TO-226-3, TO-92-3 (TO-226AA)
TO-220AB
IRF9530PBF
MOSFET P-CH 100V 12A TO220AB
Vishay Siliconix
14,842
In Stock
1 : $1.74000
Tube
-
Tube
ActiveP-ChannelMOSFET (Metal Oxide)100 V12A (Tc)10V300mOhm @ 7.2A, 10V4V @ 250µA38 nC @ 10 V±20V860 pF @ 25 V-88W (Tc)-55°C ~ 175°C (TJ)--Through HoleTO-220ABTO-220-3
IPAK (TO-251)
IRFU4615PBF
MOSFET N-CH 150V 33A IPAK
Infineon Technologies
592
In Stock
1 : $1.84000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)150 V33A (Tc)10V42mOhm @ 21A, 10V5V @ 100µA26 nC @ 10 V±20V1750 pF @ 50 V-144W (Tc)-55°C ~ 175°C (TJ)--Through HoleIPAK (TO-251AA)TO-251-3 Short Leads, IPak, TO-251AA
TO-220AB
IRF840PBF
MOSFET N-CH 500V 8A TO220AB
Vishay Siliconix
3,911
In Stock
1 : $1.86000
Tube
-
Tube
ActiveN-ChannelMOSFET (Metal Oxide)500 V8A (Tc)10V850mOhm @ 4.8A, 10V4V @ 250µA63 nC @ 10 V±20V1300 pF @ 25 V-125W (Tc)-55°C ~ 150°C (TJ)--Through HoleTO-220ABTO-220-3
Showing
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.