MOSFET (Metal Oxide) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

R6049YNZ4C13 NCH 600V 49A, TO-247G, POWER MOS Rohm Semiconductor	600 In Stock	1 : $6.28000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	49A (Tc)	10V, 12V	82mOhm @ 11A, 12V	6V @ 2.9mA	65 nC @ 10 V	±30V	2940 pF @ 100 V	-	448W (Tc)	150°C (TJ)	Through Hole	TO-247G	TO-247-3
R6049YNXC7G NCH 600V 22A, TO-220FM, POWER MO Rohm Semiconductor	1,000 In Stock	1 : $6.38000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	22A (Tc)	10V, 12V	82mOhm @ 11A, 12V	6V @ 2.9mA	65 nC @ 10 V	±30V	2940 pF @ 100 V	-	90W (Tc)	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
R6049YNX3C16 NCH 600V 49A, TO-220AB, POWER MO Rohm Semiconductor	1,000 In Stock	1 : $6.38000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	49A (Tc)	10V, 12V	82mOhm @ 11A, 12V	6V @ 2.9mA	65 nC @ 10 V	±30V	2940 pF @ 100 V	-	448W (Tc)	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
R6061YNXC7G NCH 600V 26A, TO-220FM, POWER MO Rohm Semiconductor	1,000 In Stock	1 : $9.15000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	26A (Tc)	10V, 12V	60mOhm @ 13A, 12V	6V @ 3.5mA	76 nC @ 10 V	±30V	3700 pF @ 100 V	-	100W (Tc)	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
R6027YNZ4C13 NCH 600V 27A, TO-247G, POWER MOS Rohm Semiconductor	0 In Stock Check Lead Time	1 : $6.08000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	27A (Tc)	10V, 12V	135mOhm @ 7A, 12V	6V @ 2mA	40 nC @ 10 V	±30V	1670 pF @ 100 V	-	245W (Tc)	150°C (TJ)	Through Hole	TO-247G	TO-247-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.