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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2301CDS-T1-E3
MOSFET P-CH 20V 3.1A SOT23-3
Vishay Siliconix
0
In Stock
1 : $0.41000
Cut Tape (CT)
3,000 : $0.11543
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)20 V3.1A (Tc)2.5V, 4.5V112mOhm @ 2.8A, 4.5V1V @ 250µA10 nC @ 4.5 V±8V405 pF @ 10 V-860mW (Ta), 1.6W (Tc)-55°C ~ 150°C (TJ)Surface MountSOT-23-3 (TO-236)TO-236-3, SC-59, SOT-23-3
SOT-23(TO-236)
SI2301CDS-T1-BE3
P-CHANNEL 20-V (D-S) MOSFET
Vishay Siliconix
0
In Stock
1 : $0.41000
Cut Tape (CT)
3,000 : $0.11543
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)20 V2.3A (Ta), 3.1A (Tc)2.5V, 4.5V112mOhm @ 2.8A, 4.5V1V @ 250µA10 nC @ 4.5 V±8V405 pF @ 10 V-860mW (Ta), 1.6W (Tc)-55°C ~ 150°C (TJ)Surface MountSOT-23-3 (TO-236)TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2301CDS-T1-GE3
MOSFET P-CH 20V 3.1A SOT23-3
Vishay Siliconix
0
In Stock
1 : $0.41000
Cut Tape (CT)
3,000 : $0.11543
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)20 V3.1A (Tc)2.5V, 4.5V112mOhm @ 2.8A, 4.5V1V @ 250µA10 nC @ 4.5 V±8V405 pF @ 10 V-860mW (Ta), 1.6W (Tc)-55°C ~ 150°C (TJ)Surface MountSOT-23-3 (TO-236)TO-236-3, SC-59, SOT-23-3
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Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.