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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
NX138AKMYL
NX138AKMYL
NX138AKM/SOT883/XQFN3
Nexperia USA Inc.
1,845
In Stock
1 : $0.29000
Cut Tape (CT)
10,000 : $0.03740
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V270mA (Ta)2.5V, 10V4.2Ohm @ 190mA, 10V1.5V @ 250µA0.6 nC @ 10 V±20V15 pF @ 30 V-340mW (Ta), 2.3W (Tc)-55°C ~ 150°C (TJ)Surface MountSOT-883SC-101, SOT-883
SC-101 SOT-883
BSS84AKM,315
MOSFET P-CH 50V 230MA DFN1006-3
Nexperia USA Inc.
105,815
In Stock
1 : $0.42000
Cut Tape (CT)
10,000 : $0.06248
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)50 V230mA (Ta)10V7.5Ohm @ 100mA, 10V2.1V @ 250µA0.35 nC @ 5 V±20V36 pF @ 25 V-340mW (Ta), 2.7W (Tc)-55°C ~ 150°C (TJ)Surface MountSOT-883SC-101, SOT-883
TO-220AB PKG
IPP019N06NF2SAKMA1
TRENCH 40<-<100V PG-TO220-3
Infineon Technologies
956
In Stock
1 : $2.31000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)60 V33A (Ta), 185A (Tc)6V, 10V1.9mOhm @ 100A, 10V3.3V @ 129µA162 nC @ 10 V±20V7300 pF @ 30 V-3.8W (Ta), 188W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3-U05TO-220-3
917
In Stock
1 : $1.41000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)60 V80A (Tc)6V, 10V4mOhm @ 80A, 10V3.3V @ 50µA44 nC @ 10 V±20V3375 pF @ 30 V-3W (Ta), 107W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3TO-220-3
407
In Stock
1 : $2.24000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)80 V18.5A (Ta), 99A (Tc)6V, 10V5.5mOhm @ 60A, 10V3.8V @ 55µA54 nC @ 10 V±20V2500 pF @ 40 V-3.8W (Ta), 107W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3TO-220-3
ISL9N302AS3
IPU80R750P7AKMA1-ND
COOLMOS N-CHANNEL POWER MOSFET
Infineon Technologies
1,497
Marketplace
420 : $0.71000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)800 V7A (Tj)10V750mOhm @ 2.7A, 10V3.5V @ 140µA17 nC @ 10 V±20V460 pF @ 500 V-51W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO-251-3-341TO-251-3 Short Leads, IPak, TO-251AA
1,000
In Stock
1 : $4.29000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)80 V35A (Ta), 196A (Tc)6V, 10V1.6mOhm @ 100A, 10V3.8V @ 267µA255 nC @ 10 V±20V12000 pF @ 40 V-3.8W (Ta), 300W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3TO-220-3
760
In Stock
1 : $1.95000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V12A (Ta), 52A (Tc)6V, 10V12.9mOhm @ 30A, 10V3.8V @ 30µA28 nC @ 10 V±20V1300 pF @ 50 V-3.8W (Ta), 71W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3TO-220-3
3-XQFN
BSS84AKMB,315
MOSFET P-CH 50V 230MA DFN1006B-3
Nexperia USA Inc.
47
In Stock
1 : $0.36000
Cut Tape (CT)
10,000 : $0.05368
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)50 V230mA (Ta)10V7.5Ohm @ 100mA, 10V2.1V @ 250µA0.35 nC @ 5 V±20V36 pF @ 25 V-360mW (Ta), 2.7W (Tc)-55°C ~ 150°C (TJ)Surface MountDFN1006B-33-XFDFN
200
In Stock
1 : $3.34000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V19.4A (Ta), 110A (Tc)6V, 10V5mOhm @ 60A, 10V3.8V @ 84µA76 nC @ 10 V±20V3600 pF @ 50 V-3.8W (Ta), 150W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3TO-220-3
PG-TO220-3
IPP014N06NF2SAKMA2
TRENCH 40<-<100V PG-TO220-3
Infineon Technologies
435
In Stock
1 : $4.03000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)60 V39A (Ta), 198A (Tc)6V, 10V1.4mOhm @ 100A, 10V3.3V @ 246µA305 nC @ 10 V±20V13800 pF @ 30 V-3.8W (Ta), 300W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3-U05TO-220-3
TO-220AB PKG
IPP030N06NF2SAKMA1
TRENCH 40<-<100V PG-TO220-3
Infineon Technologies
995
In Stock
1 : $1.68000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)60 V26A (Ta), 119A (Tc)6V, 10V3.05mOhm @ 70A, 10V3.3V @ 80µA102 nC @ 10 V±20V4600 pF @ 30 V-3.8W (Ta), 150W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3-U05TO-220-3
PG-TO220-3
IPP016N06NF2SAKMA1
TRENCH 40<-<100V PG-TO220-3
Infineon Technologies
997
In Stock
1 : $4.03000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)60 V36A (Ta), 194A (Tc)6V, 10V1.6mOhm @ 100A, 10V3.3V @ 186µA233 nC @ 10 V±20V10500 pF @ 30 V-3.8W (Ta), 250W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3-U05TO-220-3
870
In Stock
1 : $2.83000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)80 V22A (Ta), 115A (Tc)6V, 10V4mOhm @ 80A, 10V3.8V @ 85µA81 nC @ 10 V±20V3800 pF @ 40 V-3.8W (Ta), 150W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3TO-220-3
109
In Stock
1 : $6.60000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V27A (Ta), 184A (Tc)6V, 10V2.6mOhm @ 100A, 10V3.8V @ 169µA154 nC @ 10 V±20V7300 pF @ 50 V-3.8W (Ta), 250W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3TO-220-3
IRF150P220AKMA1
IRF150P220AKMA1
MOSFET N-CH 150V 203A TO247-3
Infineon Technologies
498
In Stock
1 : $13.74000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)150 V203A (Tc)10V2.7mOhm @ 100A, 10V4.6V @ 265µA200 nC @ 10 V±20V12000 pF @ 75 V-3.8W (Ta), 556W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO247-3TO-247-3
971
In Stock
1 : $3.19000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)80 V28A (Ta), 182A (Tc)6V, 10V2.4mOhm @ 100A, 10V3.8V @ 139µA133 nC @ 10 V±20V6200 pF @ 40 V-3.8W (Ta), 214W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3TO-220-3
553
In Stock
1 : $1.97000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V15A (Ta), 77A (Tc)6V, 10V8.2mOhm @ 50A, 10V3.8V @ 46µA42 nC @ 10 V±20V2000 pF @ 50 V-3.8W (Ta), 100W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3TO-220-3
PG-TO-251-3-347
IPSA70R2K0P7SAKMA1
MOSFET N-CH 700V 3A TO251-3
Infineon Technologies
81
In Stock
1 : $0.78000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)700 V3A (Tc)10V2Ohm @ 500mA, 10V3.5V @ 30µA3.8 nC @ 400 V±16V130 pF @ 400 V-17.6W (Tc)-40°C ~ 150°C (TJ)Through HolePG-TO251-3-347TO-251-3 Stub Leads, IPak
PG-TO251-3
IPSA70R1K2P7SAKMA1
MOSFET N-CH 700V 4.5A TO251-3
Infineon Technologies
6
In Stock
1 : $0.90000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)700 V4.5A (Tc)10V1.2Ohm @ 900mA, 10V3.5V @ 40µA4.8 nC @ 400 V±16V174 pF @ 400 V-25W (Tc)-40°C ~ 150°C (TJ)Through HolePG-TO251-3TO-251-3 Short Leads, IPak, TO-251AA
PG-TO251-3
IPSA70R750P7SAKMA1
MOSFET N-CH 700V 6.5A TO251-3
Infineon Technologies
350
In Stock
1 : $1.07000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)700 V6.5A (Tc)10V750mOhm @ 1.4A, 10V3.5V @ 70µA8.3 nC @ 400 V±16V306 pF @ 400 V-34.7W (Tc)-40°C ~ 150°C (TJ)Through HolePG-TO251-3TO-251-3 Short Leads, IPak, TO-251AA
PG-TO251-3
IPU95R450P7AKMA1
MOSFET N-CH 950V 14A TO251-3
Infineon Technologies
972
In Stock
1 : $3.41000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)950 V14A (Tc)10V450mOhm @ 7.2A, 10V3.5V @ 360µA35 nC @ 10 V±20V1053 pF @ 400 V-104W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO251-3TO-251-3 Short Leads, IPak, TO-251AA
IPU80R4K5P7AKMA1
IPU80R4K5P7AKMA1
MOSFET N-CH 800V 1.5A TO251-3
Infineon Technologies
2,107
In Stock
1 : $1.08000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)800 V1.5A (Tc)10V4.5Ohm @ 400mA, 10V3.5V @ 200µA4 nC @ 10 V±20V250 pF @ 500 VSuper Junction13W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO251-3-21TO-251-3 Short Leads, IPak, TO-251AA
PG-TO251-3
IPS70R600P7SAKMA1
MOSFET N-CH 700V 8.5A TO251-3
Infineon Technologies
292
In Stock
1 : $1.08000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)700 V8.5A (Tc)10V600mOhm @ 1.8A, 10V3.5V @ 90µA10.5 nC @ 10 V±16V364 pF @ 400 V-43W (Tc)-40°C ~ 150°C (TJ)Through HolePG-TO251-3TO-251-3 Short Leads, IPak, TO-251AA
TO-251-3 Stub
IPS60R600PFD7SAKMA1
MOSFET N-CH 650V 6A TO251-3
Infineon Technologies
50
In Stock
1 : $1.25000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)650 V6A (Tc)10V600mOhm @ 1.7A, 10V4.5V @ 80µA8.5 nC @ 10 V±20V344 pF @ 400 V-31W (Tc)-40°C ~ 150°C (TJ)Through HolePG-TO251-3TO-251-3 Short Leads, IPak, TO-251AA
Showing
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of 130

Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.