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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TP65H015G5WS
TP65H015G5WS
650 V 95 A GAN FET
Transphorm
580
In Stock
1 : $36.73000
Tube
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ActiveN-ChannelGaNFET (Gallium Nitride)650 V93A (Tc)10V18mOhm @ 60A, 10V4.8V @ 2mA100 nC @ 10 V±20V5218 pF @ 400 V-266W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
PQFN_8x8
TP65H300G4LSG-TR
GANFET N-CH 650V 6.5A 3PQFN
Transphorm
3,715
In Stock
1 : $4.76000
Cut Tape (CT)
3,000 : $2.61545
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Cut Tape (CT)
Digi-Reel®
Tube
ActiveN-ChannelGaNFET (Gallium Nitride)650 V6.5A (Tc)8V312mOhm @ 5A, 8V2.6V @ 500µA9.6 nC @ 8 V±18V760 pF @ 400 V-21W (Tc)-55°C ~ 150°C (TJ)Surface Mount3-PQFN (8x8)3-PowerDFN
PQFN_8x8
TP65H070LDG
GANFET N-CH 650V 25A 3PQFN
Transphorm
138
In Stock
1 : $14.37000
Tube
Tube
ActiveN-ChannelGaNFET (Cascode Gallium Nitride FET)650 V25A (Tc)10V85mOhm @ 16A, 10V4.8V @ 700µA9.3 nC @ 10 V±20V600 pF @ 400 V-96W (Tc)-55°C ~ 150°C (TJ)Surface Mount3-PQFN (8x8)3-PowerDFN
TP65H035G4WS
TP65H035G4WS
GANFET N-CH 650V 46.5A TO247-3
Transphorm
923
In Stock
1 : $20.43000
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Tube
ActiveN-ChannelGaNFET (Cascode Gallium Nitride FET)650 V46.5A (Tc)10V41mOhm @ 30A, 10V4.8V @ 1mA22 nC @ 0 V±20V1500 pF @ 400 V-156W (Tc)-55°C ~ 150°CThrough HoleTO-247-3TO-247-3
650 V 34 A GAN FET
TP65H050G4BS
650 V 34 A GAN FET
Transphorm
500
In Stock
1 : $14.27000
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ActiveN-ChannelGaNFET (Gallium Nitride)650 V34A (Tc)10V60mOhm @ 22A, 10V4.8V @ 700µA24 nC @ 10 V±20V1000 pF @ 400 V-119W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-263TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TP90H050WS
TP90H050WS
GANFET N-CH 900V 34A TO247-3
Transphorm
9
In Stock
1 : $19.68000
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ActiveN-ChannelGaNFET (Cascode Gallium Nitride FET)900 V34A (Tc)10V63mOhm @ 22A, 10V4.4V @ 700µA17.5 nC @ 10 V±20V980 pF @ 600 V-119W (Tc)-55°C ~ 150°CThrough HoleTO-247-3TO-247-3
Discrete Semiconductor-FET
TP65H035WSQA
GANFET N-CH 650V 47.2A TO247-3
Transphorm
0
In Stock
1 : $24.26000
Tube
Tube
ActiveN-ChannelGaNFET (Cascode Gallium Nitride FET)650 V47.2A (Tc)10V41mOhm @ 32A, 10V4.5V @ 1mA24 nC @ 10 V±20V1500 pF @ 400 V-187W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
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Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.