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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS138LT1G
MOSFET N-CH 50V 200MA SOT23-3
onsemi
0
In Stock
Check Lead Time
1 : $0.40000
Cut Tape (CT)
3,000 : $0.07046
Tape & Reel (TR)
1 : $1.00000
Bulk
-
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)50 V200mA (Ta)5V3.5Ohm @ 200mA, 5V1.5V @ 1mA-±20V50 pF @ 25 V-225mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-23-3 (TO-236)TO-236-3, SC-59, SOT-23-3
Pkg 5540
SI3407DV-T1-GE3
MOSFET P-CH 20V 8A 6TSOP
Vishay Siliconix
0
In Stock
Check Lead Time
1 : $0.51000
Cut Tape (CT)
3,000 : $0.17903
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)20 V8A (Tc)2.5V, 4.5V24mOhm @ 7.5A, 4.5V1.5V @ 250µA63 nC @ 10 V±12V1670 pF @ 10 V-4.2W (Tc)-55°C ~ 150°C (TJ)Surface Mount6-TSOPSOT-23-6 Thin, TSOT-23-6
SOT-23-6 PKG
FDC604P
MOSFET P-CH 20V 5.5A SUPERSOT6
onsemi
0
In Stock
Check Lead Time
1 : $0.55000
Cut Tape (CT)
3,000 : $0.19289
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)20 V5.5A (Ta)1.8V, 4.5V33mOhm @ 5.5A, 4.5V1.5V @ 250µA30 nC @ 4.5 V±8V1926 pF @ 10 V-1.6W (Ta)-55°C ~ 150°C (TJ)Surface MountSuperSOT™-6SOT-23-6 Thin, TSOT-23-6
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.