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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
BSC026N04LSATMA1
MOSFET N-CH 40V 23A/100A TDSON
Infineon Technologies
5
In Stock
1 : $1.83000
Cut Tape (CT)
5,000 : $0.77135
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)40 V23A (Ta), 100A (Tc)4.5V, 10V2.6mOhm @ 50A, 10V2V @ 250µA32 nC @ 10 V±20V2300 pF @ 20 V-2.5W (Ta), 63W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TDSON-8-68-PowerTDFN
TO-252-3
RFD16N06LESM9A
MOSFET N-CH 60V 16A TO252AA
onsemi
0
In Stock
1 : $1.96000
Cut Tape (CT)
2,500 : $0.86332
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)60 V16A (Tc)5V47mOhm @ 16A, 5V3V @ 250µA62 nC @ 10 V+10V, -8V1350 pF @ 25 V-90W (Tc)-55°C ~ 175°C (TJ)Surface MountTO-252AATO-252-3, DPak (2 Leads + Tab), SC-63
SOT-23-6 PKG
FDC2612
MOSFET N-CH 200V 1.1A SUPERSOT6
onsemi
0
In Stock
1 : $0.92000
Cut Tape (CT)
3,000 : $0.35457
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)200 V1.1A (Ta)10V725mOhm @ 1.1A, 10V4.5V @ 250µA11 nC @ 10 V±20V234 pF @ 100 V-1.6W (Ta)-55°C ~ 150°C (TJ)Surface MountSuperSOT™-6SOT-23-6 Thin, TSOT-23-6
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Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.