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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
UMT3F
RU1C001UNTCL
MOSFET N-CH 20V 100MA UMT3F
Rohm Semiconductor
16,157
In Stock
1 : $0.40000
Cut Tape (CT)
3,000 : $0.07671
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)20 V100mA (Ta)1.2V, 4.5V3.5Ohm @ 100mA, 4.5V1V @ 100µA-±12V7.1 pF @ 10 V-150mW (Ta)150°C (TJ)Surface MountUMT3FSC-85
8-Power TDFN
BSC050NE2LSATMA1
MOSFET N-CH 25V 39A/58A TDSON
Infineon Technologies
0
In Stock
1 : $1.05000
Cut Tape (CT)
5,000 : $0.44225
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)25 V39A (Ta), 58A (Tc)4.5V, 10V5mOhm @ 30A, 10V2V @ 250µA10.4 nC @ 10 V±20V760 pF @ 12 V-2.5W (Ta), 28W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TDSON-8-58-PowerTDFN
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Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.