Transistors - FETs, MOSFETs - Single

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Manufacturer

Infineon TechnologiesRohm Semiconductor

Series

-OptiMOS™

Packaging

Cut Tape (CT)Digi-Reel®Tape & Reel (TR)

Drain to Source Voltage (Vdss)

20 V25 V

Current - Continuous Drain (Id) @ 25°C

100mA (Ta)39A (Ta), 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V4.5V, 10V

Rds On (Max) @ Id, Vgs

5mOhm @ 30A, 10V3.5Ohm @ 100mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 100µA2V @ 250µA

Vgs (Max)

±12V±20V

Input Capacitance (Ciss) (Max) @ Vds

7.1 pF @ 10 V760 pF @ 12 V

Power Dissipation (Max)

150mW (Ta)2.5W (Ta), 28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)150°C (TJ)

Supplier Device Package

PG-TDSON-8-5UMT3F

Package / Case

8-PowerTDFNSC-85

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

RU1C001UNTCL MOSFET N-CH 20V 100MA UMT3F Rohm Semiconductor	16,157 In Stock	1 : $0.40000 Cut Tape (CT) 3,000 : $0.07671 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	100mA (Ta)	1.2V, 4.5V	3.5Ohm @ 100mA, 4.5V	1V @ 100µA	-	±12V	7.1 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	Surface Mount	UMT3F	SC-85
BSC050NE2LSATMA1 MOSFET N-CH 25V 39A/58A TDSON Infineon Technologies	0 In Stock	1 : $1.05000 Cut Tape (CT) 5,000 : $0.44225 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	25 V	39A (Ta), 58A (Tc)	4.5V, 10V	5mOhm @ 30A, 10V	2V @ 250µA	10.4 nC @ 10 V	±20V	760 pF @ 12 V	-	2.5W (Ta), 28W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-5	8-PowerTDFN

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Transistors - FETs, MOSFETs - Single

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.