Single FETs, MOSFETs

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Cut Tape (CT)Digi-Reel®Tape & Reel (TR)

FET Type

N-ChannelP-Channel

Drain to Source Voltage (Vdss)

40 V55 V

Current - Continuous Drain (Id) @ 25°C

3.8A (Ta)6.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V4.5V, 10V

Rds On (Max) @ Id, Vgs

40mOhm @ 3.8A, 10V41mOhm @ 6.2A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

48 nC @ 10 V80 nC @ 10 V

Vgs (Max)

±16V±20V

Input Capacitance (Ciss) (Max) @ Vds

870 pF @ 25 V3220 pF @ 25 V

Power Dissipation (Max)

1W (Ta)2.5W (Ta)

Supplier Device Package

8-SOSOT-223

Package / Case

8-SOIC (0.154", 3.90mm Width)TO-261-4, TO-261AA

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF7241TRPBF MOSFET P-CH 40V 6.2A 8SO Infineon Technologies	9,747 In Stock	1 : $1.01000 Cut Tape (CT) 4,000 : $0.42935 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	6.2A (Ta)	4.5V, 10V	41mOhm @ 6.2A, 10V	3V @ 250µA	80 nC @ 10 V	±20V	3220 pF @ 25 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRLL2705TRPBF MOSFET N-CH 55V 3.8A SOT223 Infineon Technologies	83,301 In Stock	1 : $1.05000 Cut Tape (CT) 2,500 : $0.44490 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	55 V	3.8A (Ta)	4V, 10V	40mOhm @ 3.8A, 10V	2V @ 250µA	48 nC @ 10 V	±16V	870 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.