Transistors - FETs, MOSFETs - Single | Electronic Components Distributor DigiKey

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

UJ3C065030T3S MOSFET N-CH 650V 85A TO220-3 UnitedSiC	1,196 In Stock	1 : $19.94000 Tube	-	Tube	Active	N-Channel	-	650 V	85A (Tc)	12V	35mOhm @ 50A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	441W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
UJ3C065030K3S MOSFET N-CH 650V 85A TO247-3 UnitedSiC	60 In Stock	1 : $20.47000 Tube	-	Tube	Active	N-Channel	-	650 V	85A (Tc)	12V	35mOhm @ 50A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	441W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
UF3C065080T3S MOSFET N-CH 650V 31A TO220-3 UnitedSiC	4,973 In Stock	1 : $8.14000 Tube	-	Tube	Active	N-Channel	-	650 V	31A (Tc)	12V	100mOhm @ 20A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	190W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
UJ3C120150K3S SICFET N-CH 1200V 18.4A TO247-3 UnitedSiC	918 In Stock	1 : $10.55000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	18.4A (Tc)	12V	180mOhm @ 5A, 12V	5.5V @ 10mA	30 nC @ 15 V	±25V	738 pF @ 100 V	-	166.7W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
UJ3C120070K3S SICFET N-CH 1200V 34.5A TO247-3 UnitedSiC	1,072 In Stock	1 : $15.82000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	34.5A (Tc)	12V	90mOhm @ 20A, 12V	6V @ 10mA	46 nC @ 15 V	±25V	1500 pF @ 100 V	-	254.2W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
UJ3C065080K3S MOSFET N-CH 650V 31A TO247-3 UnitedSiC	180 In Stock	1 : $8.74000 Tube	-	Tube	Active	N-Channel	-	650 V	31A (Tc)	12V	111mOhm @ 20A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	190W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
UF3C065080K4S MOSFET N-CH 650V 31A TO247-4 UnitedSiC	8,689 In Stock	1 : $9.03000 Tube	-	Tube	Active	N-Channel	-	650 V	31A (Tc)	12V	100mOhm @ 20A, 12V	6V @ 10mA	43 nC @ 12 V	±25V	1500 pF @ 100 V	-	190W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
SCT3060ALGC11 SICFET N-CH 650V 39A TO247N Rohm Semiconductor	41 In Stock	1 : $12.38000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	39A (Tc)	18V	78mOhm @ 13A, 18V	5.6V @ 6.67mA	58 nC @ 18 V	+22V, -4V	852 pF @ 500 V	-	165W (Tc)	175°C (TJ)	Through Hole	TO-247N	TO-247-3
UF3C065080K3S MOSFET N-CH 650V 31A TO247-3 UnitedSiC	546 In Stock	1 : $8.74000 Tube	-	Tube	Active	N-Channel	-	650 V	31A (Tc)	12V	100mOhm @ 20A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	190W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
UF3C065040T3S MOSFET N-CH 650V 54A TO220-3 UnitedSiC	0 In Stock	1 : $14.09000 Tube	-	Tube	Active	N-Channel	-	650 V	54A (Tc)	12V	52mOhm @ 40A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	326W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3

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Transistors - FETs, MOSFETs - Single

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.