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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3L
UJ3C065030T3S
MOSFET N-CH 650V 85A TO220-3
UnitedSiC
1,196
In Stock
1 : $19.94000
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ActiveN-Channel-650 V85A (Tc)12V35mOhm @ 50A, 12V6V @ 10mA51 nC @ 15 V±25V1500 pF @ 100 V-441W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220-3TO-220-3
TO-247-3L
UJ3C065030K3S
MOSFET N-CH 650V 85A TO247-3
UnitedSiC
60
In Stock
1 : $20.47000
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ActiveN-Channel-650 V85A (Tc)12V35mOhm @ 50A, 12V6V @ 10mA51 nC @ 15 V±25V1500 pF @ 100 V-441W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
UF3C-  TO-220-3L
UF3C065080T3S
MOSFET N-CH 650V 31A TO220-3
UnitedSiC
4,973
In Stock
1 : $8.14000
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ActiveN-Channel-650 V31A (Tc)12V100mOhm @ 20A, 12V6V @ 10mA51 nC @ 15 V±25V1500 pF @ 100 V-190W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220-3TO-220-3
TO-247-3L
UJ3C120150K3S
SICFET N-CH 1200V 18.4A TO247-3
UnitedSiC
918
In Stock
1 : $10.55000
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ActiveN-ChannelSiCFET (Cascode SiCJFET)1200 V18.4A (Tc)12V180mOhm @ 5A, 12V5.5V @ 10mA30 nC @ 15 V±25V738 pF @ 100 V-166.7W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
TO-247-3L
UJ3C120070K3S
SICFET N-CH 1200V 34.5A TO247-3
UnitedSiC
1,072
In Stock
1 : $15.82000
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ActiveN-ChannelSiCFET (Cascode SiCJFET)1200 V34.5A (Tc)12V90mOhm @ 20A, 12V6V @ 10mA46 nC @ 15 V±25V1500 pF @ 100 V-254.2W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
TO-247-3L
UJ3C065080K3S
MOSFET N-CH 650V 31A TO247-3
UnitedSiC
180
In Stock
1 : $8.74000
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ActiveN-Channel-650 V31A (Tc)12V111mOhm @ 20A, 12V6V @ 10mA51 nC @ 15 V±25V1500 pF @ 100 V-190W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
TO-247-4L
UF3C065080K4S
MOSFET N-CH 650V 31A TO247-4
UnitedSiC
8,689
In Stock
1 : $9.03000
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ActiveN-Channel-650 V31A (Tc)12V100mOhm @ 20A, 12V6V @ 10mA43 nC @ 12 V±25V1500 pF @ 100 V-190W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
TO-247N
SCT3060ALGC11
SICFET N-CH 650V 39A TO247N
Rohm Semiconductor
41
In Stock
1 : $12.38000
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ActiveN-ChannelSiCFET (Silicon Carbide)650 V39A (Tc)18V78mOhm @ 13A, 18V5.6V @ 6.67mA58 nC @ 18 V+22V, -4V852 pF @ 500 V-165W (Tc)175°C (TJ)Through HoleTO-247NTO-247-3
TO-247-3L
UF3C065080K3S
MOSFET N-CH 650V 31A TO247-3
UnitedSiC
546
In Stock
1 : $8.74000
Tube
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Tube
ActiveN-Channel-650 V31A (Tc)12V100mOhm @ 20A, 12V6V @ 10mA51 nC @ 15 V±25V1500 pF @ 100 V-190W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
UF3C-  TO-220-3L
UF3C065040T3S
MOSFET N-CH 650V 54A TO220-3
UnitedSiC
0
In Stock
1 : $14.09000
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ActiveN-Channel-650 V54A (Tc)12V52mOhm @ 40A, 12V6V @ 10mA51 nC @ 15 V±25V1500 pF @ 100 V-326W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220-3TO-220-3
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Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.