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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRLB8721PBF
MOSFET N-CH 30V 62A TO220AB
Infineon Technologies
874
In Stock
1 : $1.14000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)30 V62A (Tc)4.5V, 10V8.7mOhm @ 31A, 10V2.35V @ 25µA13 nC @ 4.5 V±20V1077 pF @ 15 V-65W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-220AB
IRF510PBF
MOSFET N-CH 100V 5.6A TO220AB
Vishay Siliconix
58,419
In Stock
1 : $1.12000
Tube
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V5.6A (Tc)10V540mOhm @ 3.4A, 10V4V @ 250µA8.3 nC @ 10 V±20V180 pF @ 25 V-43W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-220AB PKG
IRF520NPBF
MOSFET N-CH 100V 9.7A TO220AB
Infineon Technologies
6,743
In Stock
1 : $1.13000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V9.7A (Tc)10V200mOhm @ 5.7A, 10V4V @ 250µA25 nC @ 10 V±20V330 pF @ 25 V-48W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-220AB
IRF520PBF-BE3
MOSFET N-CH 100V 9.2A TO220AB
Vishay Siliconix
4,937
In Stock
1 : $1.17000
Tube
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V9.2A (Tc)10V270mOhm @ 5.5A, 10V4V @ 250µA16 nC @ 10 V±20V360 pF @ 25 V-60W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-220AB
IRF520PBF
MOSFET N-CH 100V 9.2A TO220AB
Vishay Siliconix
1,256
In Stock
1 : $1.17000
Tube
-
Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V9.2A (Tc)10V270mOhm @ 5.5A, 10V4V @ 250µA16 nC @ 10 V±20V360 pF @ 25 V-60W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-220AB
IRL520PBF
MOSFET N-CH 100V 9.2A TO220AB
Vishay Siliconix
9,033
In Stock
1 : $1.46000
Tube
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V9.2A (Tc)4V, 5V270mOhm @ 5.5A, 5V2V @ 250µA12 nC @ 5 V±10V490 pF @ 25 V-60W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-220-3
FQP13N10
MOSFET N-CH 100V 12.8A TO220-3
onsemi
104
In Stock
1 : $1.50000
Tube
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)100 V12.8A (Tc)10V180mOhm @ 6.4A, 10V4V @ 250µA16 nC @ 10 V±25V450 pF @ 25 V-65W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220-3TO-220-3
SGP15N60XKSA1
IRF520
MOSFET N-CH 100V 9.2A TO220AB
Harris Corporation
0
Marketplace
746 : $0.33000
Bulk
-
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)100 V9.2A (Tc)-270mOhm @ 5.6A, 10V4V @ 250µA15 nC @ 10 V±20V350 pF @ 25 V-60W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.