Single FETs, MOSFETs

Results: 2

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Series

Automotive, AEC-Q101, TrenchFET®TrenchFET®

Packaging

Cut Tape (CT)Digi-Reel®Tape & Reel (TR)

FET Type

N-ChannelP-Channel

Current - Continuous Drain (Id) @ 25°C

1.6A (Tc)8A (Tc)

Rds On (Max) @ Id, Vgs

63mOhm @ 4.3A, 10V290mOhm @ 2A, 10V

Gate Charge (Qg) (Max) @ Vgs

5.4 nC @ 4.5 V12 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds

355 pF @ 25 V470 pF @ 25 V

Power Dissipation (Max)

3.3W (Tc)33W (Tc)

Supplier Device Package

PowerPAK® 1212-8SC-70-6

Package / Case

6-TSSOP, SC-88, SOT-363PowerPAK® 1212-8

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SQ1421EDH-T1_GE3 MOSFET P-CH 60V 1.6A SC70-6 Vishay Siliconix	9,718 In Stock	1 : $0.53000 Cut Tape (CT) 3,000 : $0.18912 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	1.6A (Tc)	4.5V, 10V	290mOhm @ 2A, 10V	2.5V @ 250µA	5.4 nC @ 4.5 V	±20V	355 pF @ 25 V	-	3.3W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	SC-70-6	6-TSSOP, SC-88, SOT-363
SQS462EN-T1_GE3 MOSFET N-CH 60V 8A PPAK1212-8 Vishay Siliconix	0 In Stock Check Lead Time	1 : $1.03000 Cut Tape (CT) 3,000 : $0.43659 Tape & Reel (TR)	Automotive, AEC-Q101, TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	8A (Tc)	4.5V, 10V	63mOhm @ 4.3A, 10V	2.5V @ 250µA	12 nC @ 10 V	±20V	470 pF @ 25 V	-	33W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.