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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-TO247-3
SPW47N60C3FKSA1
MOSFET N-CH 650V 47A TO247-3
Infineon Technologies
2,673
In Stock
1 : $20.15000
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ActiveN-ChannelMOSFET (Metal Oxide)650 V47A (Tc)10V70mOhm @ 30A, 10V3.9V @ 2.7mA320 nC @ 10 V±20V6800 pF @ 25 V-415W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3-1TO-247-3
PG-TO247-3
IPW60R070C6FKSA1
MOSFET N-CH 600V 53A TO247-3
Infineon Technologies
50
In Stock
1 : $12.52000
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Not For New DesignsN-ChannelMOSFET (Metal Oxide)600 V53A (Tc)10V70mOhm @ 25.8A, 10V3.5V @ 1.72mA170 nC @ 10 V±20V3800 pF @ 100 V-391W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3-1TO-247-3
TO-247 Plus X
IXFX80N60P3
MOSFET N-CH 600V 80A PLUS247-3
IXYS
55
In Stock
1 : $20.21000
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ActiveN-ChannelMOSFET (Metal Oxide)600 V80A (Tc)10V70mOhm @ 500mA, 10V5V @ 8mA190 nC @ 10 V±30V13100 pF @ 25 V-1300W (Tc)-55°C ~ 150°C (TJ)Through HolePLUS247™-3TO-247-3 Variant
TO-247-3 AD EP
FCH072N60F
MOSFET N-CH 600V 52A TO247-3
onsemi
1,785
In Stock
1 : $9.33000
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Not For New DesignsN-ChannelMOSFET (Metal Oxide)600 V52A (Tc)10V72mOhm @ 26A, 10V5V @ 250µA215 nC @ 10 V±20V8660 pF @ 100 V-481W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
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Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.