Single FETs, MOSFETs

Results: 6

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Manufacturer

Infineon TechnologiesIXYSonsemiSTMicroelectronics

Series

CoolMOS™FRFET®, SuperFET® IIHiPerFET™, Polar3™MDmesh™ M2SuperFET® II

Product Status

ActiveNot For New Designs

Drain to Source Voltage (Vdss)

600 V650 V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)47A (Tc)52A (Tc)53A (Tc)80A (Tc)

Rds On (Max) @ Id, Vgs

70mOhm @ 21A, 10V70mOhm @ 25.8A, 10V70mOhm @ 30A, 10V70mOhm @ 500mA, 10V72mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

3.5V @ 1.72mA3.5V @ 250µA3.9V @ 2.7mA4V @ 250µA5V @ 250µA5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

70 nC @ 10 V125 nC @ 10 V170 nC @ 10 V190 nC @ 10 V215 nC @ 10 V320 nC @ 10 V

Vgs (Max)

±20V±25V±30V

Input Capacitance (Ciss) (Max) @ Vds

3060 pF @ 100 V3800 pF @ 100 V5890 pF @ 380 V6800 pF @ 25 V8660 pF @ 100 V13100 pF @ 25 V

Power Dissipation (Max)

300W (Tc)391W (Tc)415W (Tc)481W (Tc)1300W (Tc)

Supplier Device Package

PG-TO247-3-1PLUS247™-3TO-247-3

Package / Case

TO-247-3 VariantTO-247-3

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SPW47N60C3FKSA1 MOSFET N-CH 650V 47A TO247-3 Infineon Technologies	2,402 In Stock	1 : $18.47000 Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	47A (Tc)	10V	70mOhm @ 30A, 10V	3.9V @ 2.7mA	320 nC @ 10 V	±20V	6800 pF @ 25 V	-	415W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
STW48N60M2 MOSFET N-CH 600V 42A TO247 STMicroelectronics	417 In Stock	1 : $7.30000 Tube	MDmesh™ M2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	42A (Tc)	10V	70mOhm @ 21A, 10V	4V @ 250µA	70 nC @ 10 V	±25V	3060 pF @ 100 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
FCH072N60 MOSFET N-CH 600V 52A TO247-3 onsemi	72 In Stock	1 : $9.52000 Tube	SuperFET® II	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	52A (Tc)	10V	72mOhm @ 26A, 10V	3.5V @ 250µA	125 nC @ 10 V	±20V	5890 pF @ 380 V	-	481W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXFX80N60P3 MOSFET N-CH 600V 80A PLUS247-3 IXYS	55 In Stock	1 : $18.45000 Tube	HiPerFET™, Polar3™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	80A (Tc)	10V	70mOhm @ 500mA, 10V	5V @ 8mA	190 nC @ 10 V	±30V	13100 pF @ 25 V	-	1300W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3 Variant
FCH072N60F MOSFET N-CH 600V 52A TO247-3 onsemi	0 In Stock	1 : $9.33000 Tube	FRFET®, SuperFET® II	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	52A (Tc)	10V	72mOhm @ 26A, 10V	5V @ 250µA	215 nC @ 10 V	±20V	8660 pF @ 100 V	-	481W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPW60R070C6FKSA1 MOSFET N-CH 600V 53A TO247-3 Infineon Technologies	1,200 In Stock	1 : $11.48000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	53A (Tc)	10V	70mOhm @ 25.8A, 10V	3.5V @ 1.72mA	170 nC @ 10 V	±20V	3800 pF @ 100 V	-	391W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.