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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS84W-7-F
MOSFET P-CH 50V 130MA SOT323
Diodes Incorporated
764,475
In Stock
1 : $0.42000
Cut Tape (CT)
3,000 : $0.07728
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)50 V130mA (Ta)5V10Ohm @ 100mA, 5V2V @ 1mA-±20V45 pF @ 25 V-200mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-323SC-70, SOT-323
SOT-23-3
NDS331N
MOSFET N-CH 20V 1.3A SUPERSOT3
onsemi
382,847
In Stock
1 : $0.46000
Cut Tape (CT)
3,000 : $0.16200
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)20 V1.3A (Ta)2.7V, 4.5V160mOhm @ 1.5A, 4.5V1V @ 250µA5 nC @ 4.5 V±8V162 pF @ 10 V-500mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2318DS-T1-E3
MOSFET N-CH 40V 3A SOT23-3
Vishay Siliconix
3,121
In Stock
1 : $0.53000
Cut Tape (CT)
3,000 : $0.18716
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)40 V3A (Ta)4.5V, 10V45mOhm @ 3.9A, 10V3V @ 250µA15 nC @ 10 V±20V540 pF @ 20 V-750mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-23-3 (TO-236)TO-236-3, SC-59, SOT-23-3
SOT223-3L
NDT3055L
MOSFET N-CH 60V 4A SOT-223-4
onsemi
0
In Stock
1 : $0.88000
Cut Tape (CT)
4,000 : $0.37323
Tape & Reel (TR)
1 : $1.00000
Bulk
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)60 V4A (Ta)4.5V, 10V100mOhm @ 4A, 10V2V @ 250µA20 nC @ 10 V±20V345 pF @ 25 V-3W (Ta)-65°C ~ 150°C (TJ)Surface MountSOT-223-4TO-261-4, TO-261AA
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.