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Mfr Part #
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Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
MC78M05BTG
BUK9535-55A127
N-CHANNEL POWER MOSFET
NXP USA Inc.
0
Marketplace
940 : $0.27000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)55 V34A (Tc)4.5V, 10V32mOhm @ 25A, 10V2V @ 1mA±10V1173 pF @ 25 V-85W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-220AB
BUK9535-55A,127
MOSFET N-CH 55V 34A TO220AB
Nexperia USA Inc.
0
In Stock
Obsolete
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)55 V34A (Tc)4.5V, 10V32mOhm @ 25A, 10V2V @ 1mA±10V1173 pF @ 25 V-85W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
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Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.