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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-3 AD Long Lead EP
LSIC1MO120E0080
SICFET N-CH 1200V 39A TO247-3
Littelfuse Inc.
791
In Stock
1 : $21.27000
Tube
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ActiveN-ChannelSiCFET (Silicon Carbide)1200 V39A (Tc)20V100mOhm @ 20A, 20V4V @ 10mA95 nC @ 20 V+22V, -6V1825 pF @ 800 V-179W (Tc)-55°C ~ 150°CThrough HoleTO-247ADTO-247-3
TO-247-3 AD Long Lead EP
LSIC1MO120E0160
SICFET N-CH 1200V 22A TO247-3
Littelfuse Inc.
1,139
In Stock
1 : $12.18000
Tube
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V22A (Tc)20V200mOhm @ 10A, 20V4V @ 5mA57 nC @ 20 V+22V, -6V870 pF @ 800 V-125W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247ADTO-247-3
LSIC1MO120G0160
LSIC1MO120G0040
MOSFET SIC 1200V 50A TO247-4L
Littelfuse Inc.
0
In Stock
2,700
Factory
1 : $30.62000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V70A (Tc)20V50mOhm @ 40A, 20V4V @ 20mA175 nC @ 20 V+22V, -6V317 pF @ 800 V-357W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
LSIC1MO170E0750
LSIC1MO170E0750
SICFET N-CH 1700V 750OHM TO247-3
Littelfuse Inc.
0
In Stock
1 : $8.09000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1700 V6.2A (Tc)20V1Ohm @ 2A, 20V4V @ 1mA13 nC @ 20 V+22V, -6V200 pF @ 1000 V-60W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247ADTO-247-3
LSIC1MO120G0160
LSIC1MO120G0025
MOSFET SIC 1200V 70A TO247-4L
Littelfuse Inc.
0
In Stock
1 : $44.16000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V100A (Tc)20V32mOhm @ 50A, 20V4V @ 30mA265 nC @ 20 V+22V, -6V495 pF @ 800 V-500W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
TO-247-3 AD Long Lead EP
LSIC1MO120E0120
SICFET N-CH 1200V 27A TO247-3
Littelfuse Inc.
0
In Stock
1 : $16.81000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V27A (Tc)20V150mOhm @ 14A, 20V4V @ 7mA80 nC @ 20 V+22V, -6V1125 pF @ 800 V-139W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247ADTO-247-3
LSIC1MO170TO750_TO-263-7L_1
LSIC1MO170T0750
SICFET N-CH 1700V 6.4A TO263-7L
Littelfuse Inc.
0
In Stock
1 : $10.75000
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ActiveN-ChannelSiCFET (Silicon Carbide)1700 V5A (Tc)--------175°C (TJ)Surface MountTO-263-7TO-263-7, D²Pak (6 Leads + Tab)
LSIC1MO120G0160
LSIC1MO120G0080
MOSFET SIC 1200V 25A TO247-4L
Littelfuse Inc.
0
In Stock
Active
-
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V39A (Tc)20V100mOhm @ 20A, 20V4V @ 10mA92 nC @ 20 V+22V, -6V170 pF @ 800 V-214W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
LSIC1MO120G0160
LSIC1MO120G0160
MOSFET SIC 1200V 14A TO247-4L
Littelfuse Inc.
0
In Stock
Active
-
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V22A (Tc)20V200mOhm @ 10A, 20V4V @ 5mA50 nC @ 20 V+22V, -6V890 pF @ 800 V-125W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
LSIC1MO120G0160
LSIC1MO120G0120
MOSFET SIC 1200V 18A TO247-4L
Littelfuse Inc.
0
In Stock
Active
-
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V27A (Tc)20V150mOhm @ 14A, 20V4V @ 7mA63 nC @ 20 V+22V, -6V113 pF @ 800 V-156W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
TO-247-3 AD Long Lead EP
LSIC1MO170E1000
SICFET N-CH 1700V 5A TO247-3L
Littelfuse Inc.
0
In Stock
Obsolete
-
Tube
ObsoleteN-ChannelSiCFET (Silicon Carbide)1700 V5A (Tc)15V, 20V1Ohm @ 2A, 20V4V @ 1mA15 nC @ 20 V+22V, -6V200 pF @ 1000 V-54W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247ADTO-247-3
SCR 0.25A GATE SCR
SYC0102BLT1G
SCR 0.25A GATE SCR
Littelfuse Inc.
0
In Stock
3,000 : $0.16561
Tape & Reel (TR)
*
Tape & Reel (TR)
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Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.