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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PQFN_8x8
TP65H070LSG-TR
GANFET N-CH 650V 25A PQFN88
Transphorm
13,228
In Stock
1 : $13.74000
Cut Tape (CT)
500 : $9.49024
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelGaNFET (Gallium Nitride)650 V25A (Tc)10V85mOhm @ 16A, 10V4.8V @ 700µA9.3 nC @ 10 V±20V600 pF @ 400 V-96W (Tc)-55°C ~ 150°C (TJ)Surface Mount3-PQFN (8x8)3-PowerDFN
650 V 13 A GAN FET
TP65H150G4LSG-TR
650 V 13 A GAN FET
Transphorm
182
In Stock
1 : $5.04000
Cut Tape (CT)
150 : $4.22567
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelGaNFET (Gallium Nitride)650 V13A (Tc)10V180mOhm @ 8.5A, 10V4.8V @ 500µA8 nC @ 10 V±20V598 pF @ 400 V-52W (Tc)-55°C ~ 150°C (TJ)Surface Mount2-PQFN (8x8)2-PowerTSFN
PQFN_8x8
TP65H070LDG-TR
650 V 25 A GAN FET
Transphorm
426
In Stock
1 : $13.43000
Cut Tape (CT)
500 : $8.08170
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelGaNFET (Gallium Nitride)650 V25A (Tc)10V85mOhm @ 16A, 10V4.8V @ 700µA9.3 nC @ 10 V±20V600 pF @ 400 V-96W (Tc)-55°C ~ 150°C (TJ)Surface Mount3-PQFN (8x8)3-PowerDFN
TO220
TPH3206PD
GANFET N-CH 600V 17A TO220AB
Transphorm
116
In Stock
1 : $11.26000
Tube
-
Tube
Not For New DesignsN-ChannelGaNFET (Gallium Nitride)600 V17A (Tc)10V180mOhm @ 11A, 8V2.6V @ 500µA9.3 nC @ 4.5 V±18V760 pF @ 480 V-96W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TP65H480G4JSG-TR
TP65H480G4JSG-TR
GANFET N-CH 650V 3.6A 3PQFN
Transphorm
123
In Stock
1 : $4.17000
Cut Tape (CT)
4,000 : $2.14500
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelGaNFET (Cascode Gallium Nitride FET)650 V3.6A (Tc)8V560mOhm @ 3.4A, 8V2.8V @ 500µA9 nC @ 8 V±18V760 pF @ 400 V-13.2W (Tc)-55°C ~ 150°C (TJ)Surface Mount3-PQFN (5x6)3-SMD, Flat Lead
GANFET N-CH 650V 36A TO247-3
TP65H050WSQA
GANFET N-CH 650V 36A TO247-3
Transphorm
163
In Stock
1 : $20.67000
Tube
Tube
ActiveN-ChannelGaNFET (Cascode Gallium Nitride FET)650 V36A (Tc)10V60mOhm @ 25A, 10V4.8V @ 700µA24 nC @ 10 V±20V1000 pF @ 400 V-150W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
PQFN_8x8
TP65H300G4LSG-TR
GANFET N-CH 650V 6.5A 3PQFN
Transphorm
3,990
In Stock
1 : $4.98000
Cut Tape (CT)
3,000 : $2.56500
Tube
-
Cut Tape (CT)
Digi-Reel®
Tube
ActiveN-ChannelGaNFET (Gallium Nitride)650 V6.5A (Tc)8V312mOhm @ 5A, 8V2.6V @ 500µA9.6 nC @ 8 V±18V760 pF @ 400 V-21W (Tc)-55°C ~ 150°C (TJ)Surface Mount3-PQFN (8x8)3-PowerDFN
TP65H035G4WS
TP65H035G4WS
GANFET N-CH 650V 46.5A TO247-3
Transphorm
571
In Stock
1 : $19.54000
Tube
-
Tube
ActiveN-ChannelGaNFET (Cascode Gallium Nitride FET)650 V46.5A (Tc)10V41mOhm @ 30A, 10V4.8V @ 1mA22 nC @ 0 V±20V1500 pF @ 400 V-156W (Tc)-55°C ~ 150°CThrough HoleTO-247-3TO-247-3
TO220
TPH3206PS
GANFET N-CH 600V 17A TO220AB
Transphorm
725
In Stock
1 : $10.37000
Tube
-
Tube
Not For New DesignsN-ChannelGaNFET (Gallium Nitride)600 V17A (Tc)10V180mOhm @ 11A, 8V2.6V @ 500µA9.3 nC @ 4.5 V±18V760 pF @ 480 V-96W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
PQFN_8x8
TP65H070LDG
GANFET N-CH 650V 25A 3PQFN
Transphorm
266
In Stock
1 : $13.74000
Tube
Tube
ActiveN-ChannelGaNFET (Cascode Gallium Nitride FET)650 V25A (Tc)10V85mOhm @ 16A, 10V4.8V @ 700µA9.3 nC @ 10 V±20V600 pF @ 400 V-96W (Tc)-55°C ~ 150°C (TJ)Surface Mount3-PQFN (8x8)3-PowerDFN
650 V 34 A GAN FET
TP65H050G4WS
650 V 34 A GAN FET
Transphorm
153
In Stock
1 : $15.64000
Tube
Tube
ActiveN-ChannelGaNFET (Gallium Nitride)650 V34A (Tc)10V60mOhm @ 22A, 10V4.8V @ 700µA24 nC @ 10 V±20V1000 pF @ 400 V-119W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
TP65H035G4WSQA
TP65H035G4WSQA
650 V 46.5 GAN FET
Transphorm
37
In Stock
1 : $21.04000
Tube
Tube
ActiveN-ChannelGaNFET (Gallium Nitride)650 V47.2A (Tc)10V41mOhm @ 30A, 10V4.8V @ 1mA22 nC @ 10 V±20V1500 pF @ 400 V-187W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
TP65H015G5WS
TP65H015G5WS
650 V 95 A GAN FET
Transphorm
357
In Stock
1 : $35.14000
Tube
Tube
ActiveN-ChannelGaNFET (Gallium Nitride)650 V93A (Tc)10V18mOhm @ 60A, 10V4.8V @ 2mA100 nC @ 10 V±20V5218 pF @ 400 V-266W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
Discrete Semiconductor-FET
TP65H035WSQA
GANFET N-CH 650V 47.2A TO247-3
Transphorm
171
In Stock
1 : $23.20000
Tube
Tube
ActiveN-ChannelGaNFET (Cascode Gallium Nitride FET)650 V47.2A (Tc)10V41mOhm @ 32A, 10V4.5V @ 1mA24 nC @ 10 V±20V1500 pF @ 400 V-187W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
Discrete Semiconductor-FET
TP65H050WS
GANFET N-CH 650V 34A TO247-3
Transphorm
224
In Stock
1 : $19.24000
Tube
-
Tube
ActiveN-ChannelGaNFET (Cascode Gallium Nitride FET)650 V34A (Tc)12V60mOhm @ 22A, 10V4.8V @ 700µA24 nC @ 10 V±20V1000 pF @ 400 V-119W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
TP90H050WS
TP90H050WS
GANFET N-CH 900V 34A TO247-3
Transphorm
118
In Stock
1 : $20.03000
Tube
-
Tube
ActiveN-ChannelGaNFET (Cascode Gallium Nitride FET)900 V34A (Tc)10V63mOhm @ 22A, 10V4.4V @ 700µA17.5 nC @ 10 V±20V980 pF @ 600 V-119W (Tc)-55°C ~ 150°CThrough HoleTO-247-3TO-247-3
TO-247-3
TPH3205WSBQA
GANFET N-CH 650V 35A TO247-3
Transphorm
204
In Stock
1 : $22.97000
Tube
Tube
Not For New DesignsN-ChannelGaNFET (Gallium Nitride)650 V35A (Tc)10V62mOhm @ 22A, 8V2.6V @ 700µA42 nC @ 8 V±18V2200 pF @ 400 V-125W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
650 V 34 A GAN FET
TP65H050G4BS
650 V 34 A GAN FET
Transphorm
0
In Stock
1 : $13.65000
Tube
Tube
ActiveN-ChannelGaNFET (Gallium Nitride)650 V34A (Tc)10V60mOhm @ 22A, 10V4.8V @ 700µA24 nC @ 10 V±20V1000 pF @ 400 V-119W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-263TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor-FET
TP65H035WS
GANFET N-CH 650V 46.5A TO247-3
Transphorm
0
In Stock
1 : $21.76000
Tube
-
Tube
ActiveN-ChannelGaNFET (Cascode Gallium Nitride FET)650 V46.5A (Tc)12V41mOhm @ 30A, 10V4.8V @ 1mA36 nC @ 10 V±20V1500 pF @ 400 V-156W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
TO220
TPH3208PS
GANFET N-CH 650V 20A TO220AB
Transphorm
246
In Stock
1 : $10.47000
Tube
-
Tube
ObsoleteN-ChannelGaNFET (Cascode Gallium Nitride FET)650 V20A (Tc)10V130mOhm @ 13A, 8V2.6V @ 300µA14 nC @ 8 V±18V760 pF @ 400 V-96W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
TO220
TP90H180PS
GANFET N-CH 900V 15A TO220AB
Transphorm
166
In Stock
1 : $11.40000
Tube
-
Tube
ObsoleteN-ChannelGaNFET (Cascode Gallium Nitride FET)900 V15A (Tc)10V205mOhm @ 10A, 10V2.6V @ 500µA10 nC @ 8 V±18V780 pF @ 600 V-78W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
PQFN_8x8
TPH3208LDG
GANFET N-CH 650V 20A 3PQFN
Transphorm
153
In Stock
1 : $10.81000
Tube
-
Tube
ObsoleteN-ChannelGaNFET (Gallium Nitride)650 V20A (Tc)10V130mOhm @ 13A, 8V2.6V @ 300µA14 nC @ 8 V±18V760 pF @ 400 V-96W (Tc)-55°C ~ 150°C (TJ)Surface Mount3-PQFN (8x8)3-PowerDFN
TO220
TPH3206PSB
GANFET N-CH 650V 16A TO220AB
Transphorm
500
In Stock
1 : $9.71000
Tube
-
Tube
ObsoleteN-ChannelGaNFET (Gallium Nitride)650 V16A (Tc)10V180mOhm @ 10A, 8V2.6V @ 500µA6.2 nC @ 4.5 V±18V720 pF @ 480 V-81W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
3-PQFN
TPH3208LSG
GANFET N-CH 650V 20A 3PQFN
Transphorm
0
In Stock
Obsolete
-
Tube
ObsoleteN-ChannelGaNFET (Gallium Nitride)650 V20A (Tc)10V130mOhm @ 14A, 8V2.6V @ 300µA42 nC @ 8 V±18V760 pF @ 400 V-96W (Tc)-55°C ~ 150°C (TJ)Surface Mount3-PQFN (8x8)3-PowerDFN
GANFET N-CH 600V 17A 3PQFN
TPH3206LDG-TR
GANFET N-CH 600V 17A 3PQFN
Transphorm
0
In Stock
Obsolete
-
Tray
ObsoleteN-ChannelGaNFET (Gallium Nitride)600 V17A (Tc)8V180mOhm @ 11A, 8V2.6V @ 500µA9.3 nC @ 4.5 V±18V760 pF @ 480 V-96W (Tc)-55°C ~ 175°C (TJ)Surface Mount3-PQFN (8x8)3-PowerDFN
Showing
1 - 25
of 45

Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.