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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Frequency
Gain
Voltage - Test
Current Rating (Amps)
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
MAX6443US26L+
BF998E6327
BF998 - RF SMALL SIGNAL TRANSIST
Infineon Technologies
2,826
Marketplace
2,826 : $0.12000
Bulk
-
Bulk
ActiveN-Channel1GHz28dB8 V15mA2.8dB10 mA-12 VTO-253-4, TO-253AASOT143 (SC-61)
SOT143
BF998E6327HTSA1
MOSFET N-CH 12V 200MA SOT-143
Infineon Technologies
0
In Stock
9,000 : $0.15401
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time BuyN-Channel45MHz28dB8 V30mA2.8dB10 mA-12 VTO-253-4, TO-253AAPG-SOT-143-3D
SOT-343 PKG
BF998WR,115
MOSFET N-CH 12V 30MA SOT343R
NXP USA Inc.
0
In Stock
Obsolete
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ObsoleteN-Channel Dual Gate200MHz-8 V30mA0.6dB10 mA-12 VSC-82A, SOT-343CMPAK-4
SOT-143R
BF998R,215
MOSFET N-CH 12V 30MA SOT143R
NXP USA Inc.
0
In Stock
Obsolete
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ObsoleteN-Channel Dual Gate200MHz-8 V30mA0.6dB10 mA-12 VSOT-143RSOT-143R
SOT-143R
BF998RE6327HTSA1
MOSFET N-CH RF 12V 30MA SOT-143
Infineon Technologies
0
In Stock
Obsolete
-
Tape & Reel (TR)
ObsoleteN-Channel45MHz28dB8 V30mA2.8dB10 mA-12 VSOT-143RPG-SOT-143R-3D
SOT-143B
BF998,215
MOSFET NCH DUAL GATE 12V SOT143B
NXP USA Inc.
0
In Stock
Obsolete
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ObsoleteN-Channel Dual Gate200MHz-8 V30mA0.6dB10 mA-12 VTO-253-4, TO-253AASOT-143B
SOT-143B
BF998,235
MOSFET N-CH 12V 30MA SOT143
NXP USA Inc.
0
In Stock
Obsolete
-
Tape & Reel (TR)
ObsoleteN-Channel Dual Gate200MHz-8 V30mA0.6dB10 mA-12 VTO-253-4, TO-253AASOT-143B
SOT-143R
BF998R,235
MOSFET N-CH 12V 30MA SOT143
NXP USA Inc.
0
In Stock
Obsolete
-
Tape & Reel (TR)
ObsoleteN-Channel Dual Gate200MHz-8 V30mA0.6dB10 mA-12 VSOT-143RSOT-143R
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Transistors - FETs, MOSFETs - RF


RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.