Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Series
PowerTrench®TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
80 V250 V
Current - Continuous Drain (Id) @ 25°C
21.3A (Ta), 86A (Tc)50A (Tc)
Rds On (Max) @ Id, Vgs
5mOhm @ 15A, 10V42.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
91 nC @ 10 V101 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
3840 pF @ 40 V7280 pF @ 25 V
Power Dissipation (Max)
5W (Ta), 83W (Tc)260W (Tc)
Supplier Device Package
PowerPAK® SO-8TO-263 (D2PAK)
Package / Case
PowerPAK® SO-8TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263
FDB2710
MOSFET N-CH 250V 50A D2PAK
onsemi
1,557
In Stock
1 : $4.80000
Cut Tape (CT)
800 : $2.25000
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
50A (Tc)
10V
42.5mOhm @ 25A, 10V
5V @ 250µA
101 nC @ 10 V
±30V
7280 pF @ 25 V
-
260W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MOSFET N-CH 80V 21.3A/86A PPAK
SIR826LDP-T1-RE3
MOSFET N-CH 80V 21.3A/86A PPAK
Vishay Siliconix
12,253
In Stock
1 : $1.76000
Cut Tape (CT)
3,000 : $0.58725
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
21.3A (Ta), 86A (Tc)
10V
5mOhm @ 15A, 10V
2.4V @ 250µA
91 nC @ 10 V
±20V
3840 pF @ 40 V
-
5W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.