Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BS170 MOSFET N-CH 60V 500MA TO92-3 onsemi	26,400 In Stock	1 : $0.30000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	500mA (Ta)	10V	5Ohm @ 200mA, 10V	3V @ 1mA	±20V	40 pF @ 10 V	-	830mW (Ta)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
2N7000 MOSFET TO92 N 60V 0.2A 5OHM 150C onsemi	18,897 In Stock	1 : $0.45000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Ta)	4.5V, 10V	5Ohm @ 500mA, 10V	3V @ 1mA	±20V	50 pF @ 25 V	-	400mW (Ta)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
2N7000 MOSFET TO-92 60V 0.2A Diotec Semiconductor	122,181 In Stock	1 : $0.18000 Cut Tape (CT) 4,000 : $0.04468 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Ta)	4.5V, 10V	5Ohm @ 500mA, 10V	3V @ 1mA	±20V	60 pF @ 25 V	-	350mW (Ta)	150°C (TJ)	Through Hole	TO-92	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2N7000BU MOSFET N-CH 60V 200MA TO92-3 onsemi	25,937 In Stock	1 : $0.35000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Tc)	4.5V, 10V	5Ohm @ 500mA, 10V	3V @ 1mA	±20V	50 pF @ 25 V	-	400mW (Ta)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
BS170-D26Z MOSFET N-CH 60V 500MA TO92-3 onsemi	15,211 In Stock 44,000 Factory	1 : $0.38000 Cut Tape (CT) 2,000 : $0.10929 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	500mA (Ta)	10V	5Ohm @ 200mA, 10V	3V @ 1mA	±20V	40 pF @ 10 V	-	830mW (Ta)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2N7000-D75Z MOSFET N-CH 60V 200MA TO92-3 onsemi	12,714 In Stock	1 : $0.38000 Cut Tape (CT) 2,000 : $0.10875 Tape & Box (TB)	-	Cut Tape (CT) Tape & Box (TB)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Ta)	4.5V, 10V	5Ohm @ 500mA, 10V	3V @ 1mA	±20V	50 pF @ 25 V	-	400mW (Ta)	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.